UN121L
Abstract: UNR121L XN0421L XN421L
Text: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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XN0421L
XN421L)
UN121L
UNR121L
XN0421L
XN421L
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UN221L
Abstract: UNR221L XN0421L XN421L
Text: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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XN0421L
XN421L)
UN221L
UNR221L
XN0421L
XN421L
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UN221L
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0421L (XN421L) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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2002/95/EC)
XN0421L
XN421L)
UNR221L
UN221L)
UN221L
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0421L (XN421L) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN0421L
XN421L)
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UN221L
Abstract: UNR221L XN0421L XN421L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0421L (XN421L) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05
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2002/95/EC)
XN0421L
XN421L)
UN221L
UNR221L
XN0421L
XN421L
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UN221L
Abstract: UNR221L XN0421L XN421L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0421L (XN421L) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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2002/95/EC)
XN0421L
XN421L)
UN221L
UNR221L
XN0421L
XN421L
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UN121L
Abstract: XN421L
Text: Composite Transistors XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current Ta=25˚C Symbol Ratings Unit VCBO
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XN421L
UN121L
XN421L
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XN0421L
Abstract: XN421L UN121L UNR121L
Text: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25
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XN0421L
XN421L)
UNR121L
UN121L)
XN0421L
XN421L
UN121L
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Panasonic C om posite Transistors XN421L Silicon NPN epitaxial planer transistor U nit: mm For sw itching/digital circuits • Features • Two elements incorporated into one package. Transistors with built-in resistor • Reduction of the mounting area and assembly cost by one half.
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XN421L
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