mJI 1032
Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Text: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a
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EN5055
LC382161T-17
LC382161
65536-word
16-bit
50-pin
c17G7b
0D15317
mJI 1032
T522 capacitor
TSOP 50 PIN
ULN 232
V11J
LC382161T-17
TSOP50
5B60
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TC55V4376FF
Abstract: TC55V4376FF-100
Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor
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TC55V4376FF-100
072-WORD
36-BIT
TC55V4376FF
592-bit
LQFP100-P-1420-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor
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TC55V4336FFI-83
TC55V4336FFI
304-bit
LQFP100-P-1420-0
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor
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TC55V4376FF-100
TC55V4376FF
592-bit
I/032,
LQFP100-P-1420-0
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NEC 424400
Abstract: NEC 424400-70 424400 60 424400 80 uPD424400 424400
Text: DATA SHEET MOS INTEGRATED CIRCUIT /IPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4400
uPD424400
PD42S4400,
PD42S4400
26-pin
uPD42S4400-60
uPD42S4400-70
PD424400-80
NEC 424400
NEC 424400-70
424400 60
424400 80
424400
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am79c940
Abstract: No abstract text available
Text: a Advanced Micro Devices Am79C940 Media Access Controller for Ethernet MACE DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ Integrated Controller with 10BASE-T transceiver and AUI port Supports IEEE 802.3/ANSI 8802-3 and Ethernet standards
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Am79C940
10BASE-T
84-pin
100-pin
80-pin
16-bit
am79c940
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PDF
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Untitled
Abstract: No abstract text available
Text: A m 79C 900 In t e g r a te d L o c a l A re a C o m m u n ic a tio n s C ontroller ILACC™ Distinctive Characteristics. 1-51 General Description. 1-51
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X777777
Am79C900
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PDF
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dp8477
Abstract: PC87560UBD nec 8237 ex hcl notebook l19 MOTHERBOARD CIRCUIT diagram N82077 8259 interface with 8051 Peripheral FXA16 ic 8038 APPLICATIONS PC87570 DS1287
Text: P R E L IM IN A R Y N a tiona l Semiconductor November 1997 PC87560UBD — PCI System I/O 1.0 General Description 2.0 Features The PC87560 is a highly integrated IC which incorporates PCI Interface, Bus Mastering Fast IDE Controller, Universal Serial Bus USB Host Controller, commonly-used I/O pe
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PC87560UBD
PC87560
PC87550,
dp8477
PC87560UBD
nec 8237 ex
hcl notebook l19 MOTHERBOARD CIRCUIT diagram
N82077
8259 interface with 8051 Peripheral
FXA16
ic 8038 APPLICATIONS
PC87570
DS1287
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)
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V53C8129H
V53C8129H-50
24-pin
26/24-pin
QD03fl3b
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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16-BIT,
uPD4264160
uPD4265160
50-pin
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Untitled
Abstract: No abstract text available
Text: HM-65642/883 S 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random
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HM-65642/883
MIL-STD883
HM-65642/883
80C86
80C88
100kHz
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NEC 424400-80
Abstract: NEC 424400-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The JUPD424400 is a 1,048,576 w ords by 4 bits CMOS dynam ic RAM. The fast page mode capability realizes high speed access and low power consum ption.
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UPD424400
JUPD424400
26-pin
1PD424400-70
NEC 424400-80
NEC 424400-60
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424260-60
Abstract: 4275a5
Text: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode
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uPD42S4260-60
16-BIT,
iiPD42S4260-60,
/iPD42S4260-60
44-pin
40-pin
b427S25
424260-60
4275a5
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CAT33C704 4K-Bit Secure Access Serial E2PROM FEATURES • Single 3V Supply ■ Low Power Consumption: Active: 3 mA Standby: 250 |iA ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ Memory Pointer WRITE Protection ■ 100,000 Program/Erase Cycles
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CAT33C704
CAT33C704
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TC55V4336FFI-83
Abstract: 032J
Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor
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TC55V4336FFI-83
072-WORD
32-BIT
TC55V4336FFI
304-bit
LQFP100-P-1420-0
TC55V4336FFI-83
032J
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Untitled
Abstract: No abstract text available
Text: Preliminary CAT35C704 4K-Bit Secure Access Serial E2PROM FEATURES • Single 5V Supply ■ Operating Frequency: D C -3M H z ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ Low Power Consumption: -A ctive: 3 mA -S tandby: 250 jiA ■ Memory Pointer WRITE Protection
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CAT35C704
CAT35C704
8-22-LEAD
MS001
0G034G2
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PDF
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HM53461ZP-12
Abstract: HM53461ZP-10 53461P
Text: HM53461 Series 65,536-word x 4-bit Multiport CMOS Video RAM • DESCRIPTION H M 53461P Series The HM53461 is a 262,144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4-bit Serial A ccess Memory SA M port. The SA M port is connected to an internal 1,024-bit data register through a 256-word
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HM53461
536-word
144-bit
64k-word
256-word
024-bit
HM53461ZP-12
HM53461ZP-10
53461P
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PDF
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HM53461ZP
Abstract: No abstract text available
Text: HM53461 Series 65,536-word x 4-bit Multiport CMOS Video RAM The HM53461 is a 262, 144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4bit Serial Access Memory SA M port. The SA M port is con nected to an internal 1,024-bit data register through a 256-word x
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HM53461
536-word
144-bit
64k-word
256-word
024-bit
outputs00
X777777
HM53461ZP
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PDF
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FAX508-836-4850
Abstract: hd1131
Text: ^EDI EDI2GG43264V 1M egabyte S yn ch ron o u s C ard Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3 V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga
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EDI2GG43264V
4x64Kx32
4x64Kx32,
EDI2KG43264VXXD
4x64Kx32.
EDI2GG43264V
1Q859
FAX508-836-4850
hd1131
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI 128K X H Y 6 3 8 1 0 0 FAST SRAM 8 -b it PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai’s high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,
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HY638100
15/17/20/25ns
1DG01-11-MAY95
400mil
HY638100J
HY638100U
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mhtl
Abstract: No abstract text available
Text: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22,1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5221605 is offered in 2 banks for improved performance.
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HM5221605
536-word
16-bit
ADE-203-199A
Hz/58
Hz/50
\z//////////////77x\
/777777T
mhtl
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)
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V53C664
80/80L
10/10L
V53C664L
200nA
16-bit
V53C664
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PDF
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manchester
Abstract: rxc 50 NATIONAL DP8390 SL4000 LTAB
Text: STARLAN INTERFACE SL4000 PRELIMINARY PIN O UT FEATURES - 1 XTAL2- 2 19 - PSEL RXDOUT- 3 18 - RXDIN TXD IN -CTS -CRS - 4 RTS 5 7 -16 -15 -14 - LPBK - 8 13 - CD2 XTAL1 8X CLKIN o INTERFACE FOR THE LAN CONTROLLERS o UP TO 4 MBITS PER SECOND DATA RATE
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SL4000
SL4000
-NT29K-
4160-B
manchester
rxc 50 NATIONAL
DP8390
LTAB
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PDF
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PC87560UBD
Abstract: ic lcl 8038
Text: PRELIM INARY National Semiconductor November 1997 PC87560UBD — PCI System I/O 1.0 General Description 2.0 Features The PC87560 is a highly integrated IC which incorporates PCI Interface, Bus Mastering Fast IDE Controller, Universal Serial Bus USB) Host Controller, commonly-used I/O pe
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PC87560UBD
PC87560
PC87550,
ic lcl 8038
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PDF
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