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    Abstract: IX-29
    Text: _ _ _ _ _ _ _ _ _M X 2 FEATURES • • • • • • • • • 9 F8 1 OO 8 M - B r r t 'IM x 8 / 5 * 1 H K x I S C M O S S IN G L E V O L T A G E F L A S H E E P R O M 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


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    Abstract: No abstract text available
    Text: PRELIMINARY •U I w l— ■ M X 2 9 F 8 1 OO 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • 5V ± 10% write and erase • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical


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