Q13L
Abstract: 70P3337 CQX 89 IDT70P3307 IDT70P3337 diode d5r 70P3307
Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz Separate, Independent Read and Write Data Ports
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IDT70P3307
IDT70P3337
1024K/512K
1024K
233MHz,
250MHz
de024
70P3337
drw17
Q13L
CQX 89
IDT70P3307
IDT70P3337
diode d5r
70P3307
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Q11L
Abstract: 70P3337 CQX 89 IDT70P3307 IDT70P3337 RM-576 Q15L tbl17 BW1R q11r
Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz
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IDT70P3307
IDT70P3337
1024K/512K
1024K
233MHz,
250MHz
18/9Mb
IDT70P3307/70P3337
Q11L
70P3337
CQX 89
IDT70P3307
IDT70P3337
RM-576
Q15L
tbl17
BW1R
q11r
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70P3337
Abstract: 70P3307
Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz Separate, Independent Read and Write Data Ports
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IDT70P3307
IDT70P3337
1024K/512K
1024K
233MHz,
250MHz
18/9Mb
IDT70P3307/70P3337
70P3337
70P3307
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ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions
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125OC
100ms
ixf55n50
50N50
24 volts 100 amperes smps
9 NA STR 2005
125OC
eco-pac
PSMG50
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brake rectifier motor
Abstract: dc chopper circuit ANS5 diode x18
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9
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brake rectifier motor
Abstract: DIODE N7
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features
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PSDI 50
Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Text: ECO-PAC TM 2 Three Phase Rectifier Bridge PSDI 50/12 VRRM IdAVM with IGBT and Fast Recovery Diode for Braking System in ECO-PACTM 2 = 1200 V = 56 A Preliminary Data Sheet V16 K1 ~ D1 ~ G1 ~ D1 D3 D5 A4 N7 D1 T L9 D2 D4 D6 X18 R9 Input Rectifier D1 – D6 Symbol
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NTC 279 T 200
Abstract: GE X18 TRANSISTOR Outlines igbt 25t120 .25T120 25t120 robot control PS18 SV18
Text: VDI 25-12P1 VID 25-12P1 VII 25-12P1 VIO 25-12P1 IC25 = 30 A VCES = 1200 V VCE sat typ. = 2.6 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 T16 NTC F1 X16 Pin arangement see outlines n X18 Features Maximum Ratings
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25-12P1
25T120
NTC 279 T 200
GE X18
TRANSISTOR Outlines
igbt 25t120
.25T120
25t120
robot control
PS18
SV18
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igbt 300v data sheet
Abstract: robot control 14T60 PS18 SV18 rthjc
Text: VDI 25-06P1 VID 25-06P1 VII 25-06P1 VIO 25-06P1 IC25 = 24.5 A VCES = 600 V VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 T16 NTC F1 X16 Pin arangement see outlines n X18 Features Maximum Ratings
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25-06P1
14T60
igbt 300v data sheet
robot control
14T60
PS18
SV18
rthjc
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237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
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50-06P1
25T60
237td
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Untitled
Abstract: No abstract text available
Text: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines
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42T60
75-06P1
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Untitled
Abstract: No abstract text available
Text: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII AC1 IJK VDI VID IK10 VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-12P1
25-12P1
25T120
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Untitled
Abstract: No abstract text available
Text: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines Features t IGBTs Maximum Ratings
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42T60
75-06P1
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50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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50-12P1
Abstract: No abstract text available
Text: VDI 50-12P1 VII 50-12P1 VID 50-12P1 VIO 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII AC1 IK10 IJK VDI VID P9 VIO L9 X15 NTC X15 NTC X18 F1 LMN X16 T16
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50-12P1
50-12P1
42T120
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514T60
Abstract: No abstract text available
Text: VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 IC25 = 24.5 A VCES = 600 V VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-06P1
25-06P1
14T60
514T60
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NTC K15
Abstract: 125OC PSMG150
Text: ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS on trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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K10/11
125OC
NTC K15
125OC
PSMG150
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igbt 25t120
Abstract: .25T120 25t120 PS18 SV18 LNX16
Text: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-12P1
25-12P1
25T120
2003VDI
igbt 25t120
.25T120
25t120
PS18
SV18
LNX16
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25t120
Abstract: PS18 SV18 NTC 279 T 200
Text: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-12P1
25-12P1
25T120
25t120
PS18
SV18
NTC 279 T 200
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14T60
Abstract: PS18 SV18 TF20A
Text: VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 IC25 = 24.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-06P1
25-06P1
14T60
14T60
PS18
SV18
TF20A
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Untitled
Abstract: No abstract text available
Text: QS70581 PRELIMINARY High-Speed CMOS « i, ^« 8K x 18 Asynchronous Dual-Port RAM Ö _ QS70581 FEATURES/BENEFITS • • • • • • • High-speed asynchronous x18 dual-port RAM architecture Independent port access and control Access times from either port,
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QS70581
QS70581
100-pln
100-Pin
MDSF-00013-02
4bb003
000217b
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Untitled
Abstract: No abstract text available
Text: QS70681 PRELIMINARY Q High-Speed CMOS 16K x 18 Asynchronous Dual-Port RAM QS70681 FEATURES/BENEFITS • • • • • • • High-speed asynchronous x18 dual-port RAM architecture Independent port access and control Access times from either port, 25/35/45/55 ns
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QS70681
QS70681
100-pin
MDSF-00014-02
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a6l diode
Abstract: No abstract text available
Text: QS70581 PRELIMINARY Q High-Speed CMOS 8K x 18 Asynchronous Dual-Port RAM QS70581 FEATURES/BENEFITS • • • • • • • H igh-speed asynchronous x18 dual-port RAM architecture Independent port access and control A ccess tim es from either port, 25/35/45/55 ns
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QS70581
QS70581
-70uC)
100-pin
SF-00013-02
a6l diode
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Untitled
Abstract: No abstract text available
Text: QS70681 PRELIMINARY Q High-Speed CMOS 3 . 1 ., . _ 16K x 18 Asynchronous Dual-Port RAM nc, ncoH QS70681 FEATURES/BENEFITS • • • • • • • H igh-speed asynchronous x18 dual-port RAM architecture Independent port access and control Access tim es from either port,
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QS70681
QS70681
100-pin
DSF-00014-02
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