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    X-GOLD 208 INFINEON Search Results

    X-GOLD 208 INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    CN-ACPRREDAA0 Amphenol Cables on Demand RCA Male Plug Cable Connector (Red) - Amphenol ACPR-RED - Gold Plated Diecast Shell Datasheet
    AV-3.5MINYRCA-015 Amphenol Cables on Demand Amphenol AV-3.5MINYRCA-015 Stereo Y Adapter Cable - Premium Gold Stereo 3.5mm (Headphone Plug) to Dual RCA Y Adapter Cable - 3.5mm Mini-Stereo Male to Dual RCA Male 15ft Datasheet
    DA14580 PLT Golden Unit Renesas Electronics Corporation Bluetooth® Low Energy 16-site Production Line Tool Kit Golden Unit Daughterboard Visit Renesas Electronics Corporation
    101015147502A Amphenol Communications Solutions T-flash Card Hingd With 15u\\ Gold Visit Amphenol Communications Solutions

    X-GOLD 208 INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X PDF

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw PDF

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 PDF

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA PDF

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 PDF

    PT740 AB

    Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
    Text: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher


    Original     		ADE-410-001J March/2002 PT740 AB 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 BP-108 EDR7315 QP4-064050-002-A PDF

    pc2700s-2533-0-a1

    Abstract: PC2700S-2533 PC2700-2533 PC2100S-2033 pc27002533
    Text: Data Sheet, Rev. 0.5, Dec. 2003 HYS64D64020HDL-5-B HYS64D64020HDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-12 Published by Infineon Technologies AG,


    Original     		HYS64D64020HDL-5-B HYS64D64020HDL-6-B 200-Pin HYS64D64020HDL- L-DIM-200-006 pc2700s-2533-0-a1 PC2700S-2533 PC2700-2533 PC2100S-2033 pc27002533 PDF

    WD2RE512X809

    Abstract: WD2RE01GX809 JEDEC DDR2-400
    Text: DDR2-400, 533,667 One Rank, x8 Registered SDRAM DIMM Pb-free 256MB 512MB 1GB 2GB - WD2RE256X809 WD2RE512X809 WD2RE01GX809 WD2RE02GH809 Stacked, Preliminary* Features: • • • • • • • • • • • • • Figure 1: Available profiles 240-pin Registered ECC DDR2 SDRAM Dual-In-Line


    Original     		DDR2-400, 256MB 512MB WD2RE256X809 WD2RE512X809 WD2RE01GX809 WD2RE02GH809 240-pin DDR2-400 256MB, JEDEC DDR2-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG64M64EEU-D6 512MB 64Mx64 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG64M64EEU PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG64M64EEU-D6 512MB 64Mx64 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG64M64EEU PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG64M64EEU-D6 512MB 64Mx64 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG64M64EEU PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG264M72EEU-D6 ADVANCED* 1GB – 2x64Mx72 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module DIMM „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG264M72EEU-D6 2x64Mx72 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG264M72EEU 2x64Mx74 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG264M72EEU-D6 ADVANCED* 1GB – 2x64Mx72 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module DIMM „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG264M72EEU-D6 2x64Mx72 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG264M72EEU 2x64Mx74 PDF

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG264M64EEU-D6 2x64Mx64 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG264M64EEU PDF

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG264M64EEU-D6 2x64Mx64 240-pin, PC2-6400* PC2-5300* PC2-4200 PC2-3200 18-compatible) WV3HG264M64EEU PDF

    PC2-3200

    Abstract: PC2-5300 PC2-6400 WV3HG264M64EEU-D6
    Text: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2


    Original     		WV3HG264M64EEU-D6 2x64Mx64 240-pin, WV3HG264M64EEU 64Mx8 240-pin PC2-6400* PC2-5300* PC2-4200 PC2-3200 PC2-5300 PC2-6400 WV3HG264M64EEU-D6 PDF

    JEDEC DDR2-400

    Abstract: DDR2 sdram pcb layout Wintec dram micron DDR2 pcb layout ddr2-533 MICRON Wintec Industries dm 1265 r sdram pcb layout guide
    Text: DDR2-400, 533 Single Rank, x8 Registered SDRAM DIMMs 256MB 512MB 1GB 2GB - W1D32M72R8 W1D64M72R8 W1D128M72R8 W1D256M72R8 Preliminary* Features: • • • • • • • • • • • • Figure 1: Available layouts 240-pin Registered ECC DDR2 SDRAM Dual-InLine Memory Module for DDR2-400 and DDR2-533


    Original     		DDR2-400, 256MB 512MB W1D32M72R8 W1D64M72R8 W1D128M72R8 W1D256M72R8 240-pin DDR2-400 DDR2-533 JEDEC DDR2-400 DDR2 sdram pcb layout Wintec dram micron DDR2 pcb layout ddr2-533 MICRON Wintec Industries dm 1265 r sdram pcb layout guide PDF

    DDR400B

    Abstract: HYS64D64020GDL PC2700 PC3200 DDR333 DDR333B DDR400
    Text: D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-05 Published by Infineon Technologies AG,


    Original     		HYS64D64020 200-Pin L-DIM-200-006 DDR400B HYS64D64020GDL PC2700 PC3200 DDR333 DDR333B DDR400 PDF

    PC2700S-25330

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.2, Jul. 2004 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG,


    Original     		HYS64D64020 200-Pin Information2700S GLD09568 L-DIM-200-6 PC2700S-25330 PDF

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 PDF

    HYS64D32000GU-7-B

    Abstract: HYS64D32000GU-7-A HYS64D64020GU-7-A HYS64D32000GU-7 HYS64D64020GU-7 HYS72D64020GU-7-B HYS72D32000GU-7-A
    Text: HYS64/72D32000/64020GU Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256 MByte & 512 MByte Modules PC1600 & PC2100 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications


    Original     		HYS64/72D32000/64020GU 184-pin PC1600 PC2100 MO-206 25ies L-DIM-184-9d HYS64D32000GU-7-B HYS64D32000GU-7-A HYS64D64020GU-7-A HYS64D32000GU-7 HYS64D64020GU-7 HYS72D64020GU-7-B HYS72D32000GU-7-A PDF