Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
|
OCR Scan
|
NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
P14387E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
|
OCR Scan
|
NE960R2
NE961R200
NE960R200
NE960R275
P13775E
|
PDF
|
TIM1415-8
Abstract: No abstract text available
Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1415-8
2-11C1B)
MW50410196
TIM1415-8
|
PDF
|
TIM1414-4A
Abstract: No abstract text available
Text: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1414-4A
ITIM1414-4A
MW50290196
TIM1414-4A
|
PDF
|
TIM1414-5
Abstract: No abstract text available
Text: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1414-5
MW50300196
Tim1414-5
|
PDF
|
TIM1414-8
Abstract: No abstract text available
Text: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1414-8
2-11C1B)
MW50310196
Tim1414-10S-Parameters
TIM1414-8
|
PDF
|
TIM1415-2
Abstract: No abstract text available
Text: TOSHIBA TIM1415-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1415-2
MW50390196
TIM1415-2
|
PDF
|
TIM1414-15
Abstract: No abstract text available
Text: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1414-15
2-11C1B)
MW50370196
Tim1414-15S-Parameters
TIM1414-15
|
PDF
|
TIM1414
Abstract: TIM1414-10A
Text: TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1414-10A
2-11C1B)
MW50340196
Tim1414-10A
TIM1414
|
PDF
|
TIM1415-4
Abstract: No abstract text available
Text: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package
|
Original
|
TIM1415-4
MW50400196
TIM1415-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1415-2
MW50390196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1414-4A
MW50290196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1415-4
MW50400196
|
PDF
|
Tic 4148
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1414-8
Tic 4148
|
PDF
|
|
|
JE 33
Abstract: No abstract text available
Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1415-8
2-11C1B)
MW50410196
JE 33
|
PDF
|
NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
|
Original
|
NE960R2
NE961R200
NE960R200
NE960R275
|
PDF
|
NEC JAPAN
Abstract: NE960R2 NE960R200 NE960R275
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
|
Original
|
NE960R2
NE960R200
NE960R275
NEC JAPAN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1OA Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1414-1OA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
TIM1414-5
MW50300196
|
PDF
|
NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
|
Original
|
NE960R2
NE961R200
NE960R200
NE960R275
|
PDF
|
NE960R5
Abstract: NE960R500 NE960R575 NE961R500 NE962R575 ku-band oscillator
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
|
Original
|
NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
ku-band oscillator
|
PDF
|
NE960R5
Abstract: NE960R500 NE960R575 NE961R500 NE962R575
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
|
Original
|
NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
|
PDF
|
NE960R5
Abstract: NE960R500 NE960R575
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
|
Original
|
NE960R5
NE960R500
NE960R575
|
PDF
|
TIM1011-4L
Abstract: No abstract text available
Text: TOSHIBA TIM1011-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz
|
Original
|
TIM1011-4L
MW50100196
TIM1011-4L
|
PDF
|
