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    X I TRANSISTOR 6 PIN Search Results

    X I TRANSISTOR 6 PIN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    X I TRANSISTOR 6 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5943 equivalent

    Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
    Text: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low


    OCR Scan     		PDF 2N5943 b3b7S54 2N5943 equivalent 2N5943 JOHANSON 2951 Stackpole ferrite

    LB1272

    Abstract: diode 7836 783B 3003a power transistor VJN-35V
    Text: Ordering number: EN 7838 SA\YO LB 1272 N0.783B M o n o lith ic D ig it a l IC i 6-Unit, Darlington Transistor Array X The circuit configuration of this IC is a 6-unit Darlington transistor array cons^tfihg oy|?N Y ^ ^ s t o r s ^ ^ is ideally suited for use in printer hammer driving, lamp or relay driving ap p licatid ^


    OCR Scan     		PDF 18-digit 8215KI 7213KI 7241KI LB1272 150mA 100mA 10/is Vout-22V LB1272 diode 7836 783B 3003a power transistor VJN-35V

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number : EN ¡K4916 ¡ CMOS LSI LC35256A, AS, AM-70/85/10 256K 32768 words x 8 bits^SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM aie 32768 words x 8-bils asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CM OS memory c e ll, low


    OCR Scan     		PDF K4916 LC35256A, AM-70/85/10 5256A LC35256A AM-70/85/10

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,


    OCR Scan     		PDF LC35256A, AT-70/85/10 LC35256A LC35256A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c


    OCR Scan     		PDF MT6L59E MT3S06S MT3S06T) MT3S07S MT3S07T)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c


    OCR Scan     		PDF MT6L59E MT3S06S MT3S06T) MT3S07S MT3S07T)

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD MQE D • 7 flaflTtt Q Q G 3 SSfl H B R H M JJlffl IC/Standard ICs BA6722 BA6722 N T > v X £ X < "J ^ K 7 / V Transistor Switch Driver / Series Regulator B A 6 7 2 2 1 Í, • W fé 'tfjílS I/ D im e n sio n s Unit : mm I C T 't o 2 O C ) 5V L/* a U- $ t W t t t t P N P h 7 > V X :


    OCR Scan     		PDF BA6722 BA6722 T-58-11-13

    HN3C14FU

    Abstract: No abstract text available
    Text: T O S H IB A HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU HN3C14FU

    2SD1189F

    Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1


    OCR Scan     		PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SB822 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY ADVANCE DATA S E M I C O N D U C T O R S DS3692-4.3 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5|±m technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3692-4 MA9264 MA9264 8192x8 110lOO 37tjflS22

    Untitled

    Abstract: No abstract text available
    Text: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a


    OCR Scan     		PDF MAX2601 MAX2601/MAX2602 MAX2601/MAX2602

    2222 031 capacitor philips

    Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
    Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF BLF348 711005b 2222 031 capacitor philips TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor

    Untitled

    Abstract: No abstract text available
    Text: t>a 4 ^ 0 2=] 0017 2 fl^ T b S • MITSUBISHI RF POWER MODULE M57792 806-870MHZ, 13.5V, 20W, FM MOBILE RADIO BLOCK DIAGRAM PIN : © Pin @ V CC 1 VCC 2 ©VCC3 ® PO DGND © : RF INPUT : 1st. DC S U PPLY : 2nd. DC SU PPLY : 3rd. DC SU PPLY : RF OUTPUT


    OCR Scan     		PDF M57792 806-870MHZ,

    78L05

    Abstract: BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05
    Text: Product specification Philips Semiconductors BLF247B VHF push-pull power MOS transistor PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability 1 • Withstands full load mismatch. /~ l 2 X~l g• APPLICATIONS g 5 • Large signal applications in the


    OCR Scan     		PDF BLF247B OT262A1 MAM09B 7110aSb 78L05 BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05

    transistor tl 430 c

    Abstract: M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC
    Text: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO O U TLIN E DR AW ING D im ensions in mm PIN : P in RF INPUT ©VBB BASE BIAS SUPPLY VCC1 1st. DC SUPPLY @ VCC2 2nd. DC SUPPLY ©PO RF OUTPUT ©GND FIN A B SO LU TE M AXIM UM R A TING S Tc = 2 5 unless otherwise noted


    OCR Scan     		PDF M57745 430-450MHZ, transistor tl 430 c M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC

    blf544b

    Abstract: 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322
    Text: Philip« Sem iconductors Product »pacification UHF push-pull power MOS transistor PHILIPS T - 3^ - /I INTERNATIONAL SbE T> • BLF544B 71100Bb OOMBTflS 177 B I P H I N PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF 7110flBb OT268 OT268 BLF544B blf544b 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322

    M57744

    Abstract: No abstract text available
    Text: „ _ ^2^62^ MITSUBISHI RF POWER MODULE 0 0 1 7 2 0 2 34A • M57744 889-915MHz, 12.5V, 13W, FM MOBILE RADIO O U T U N E DRAWING Dimensions in mm BLOCK DIAGRAM H r- I— © PIN : © P in : RF INPUT VCC! ® VC C 3 : 1st. DC : 2nd. DC : 3rd. DC ®PO : RF O UTPUT


    OCR Scan     		PDF M57744 889-915MHz, M57744

    M57716

    Abstract: C803C 430M 440M TRANSISTOR C 557 B
    Text: MITSUBISHI RF POWER MODULE M57716 430-450MHZ, 12.5V, 17W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm 5 a P rs ^ / <|> — {; X — lh PIN : 0 P in RF IN PU T ®VBB BASE BIAS SUPPLY @ Vcci 1st. DC SUPPLY ®V C C 2 2nd. DC SUPPLY


    OCR Scan     		PDF M57716 430-450MHZ, M57716 C803C 430M 440M TRANSISTOR C 557 B

    transistor tt 2222

    Abstract: 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll 443n 2222 032 nm 3915 class B push pull power amplifier
    Text: Philips Semiconductors Product specification VHF push-pull power MOS transistor_ l Z m 3 9 “ /S ' ShTl— PHILIPS INTERNATIONAL I 7110a2L, OOMBflMb SMt, ¿ P H I N PIN CONFIGURATION FEATURES • • • • BLF248 High power gain Easy power control


    OCR Scan     		PDF BLF248 OT262 711Dfl2b BLF248 transistor tt 2222 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll 443n 2222 032 nm 3915 class B push pull power amplifier

    uc3807

    Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF221 O-39/3) 004374D MSB009- MB8072' mu711Dfl2b MC9804 uc3807 BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE b 2 4 ci ß 2 ci D017222 13b • _ M57764 806-825MHZ, 12.5V, 20W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm B LO C K DIAGRAM PIN : Pin © VCCI @VCC2 @ VCC3 PO © G ND : RF INPUT : 1st. DC S U P P LY : 2nd. DC S U PPLY


    OCR Scan     		PDF D017222 M57764 806-825MHZ,

    BLF545

    Abstract: 71009 SB 015 capacitor philips IEC134 VCA828 pu enamelled copper wire
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF545 r -3 ^ / 3 5bE D 7110öSb OOMB'nM 1ÖT PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF T-31-/3 BLF545 OT268 VCA828 BLF545 71009 SB 015 capacitor philips IEC134 VCA828 pu enamelled copper wire

    et1600

    Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
    Text: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection


    OCR Scan     		PDF 4N25/2< V1CT6H/62 KK27PH KK24P 3010PiG 3020P ET1600 Japanese Transistor TRANSISTOR P 3 80ng transistor N J

    Philips 2222 capacitor

    Abstract: philips capacitor philips capacitor 2222
    Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222