WT SOT23 Search Results

WT SOT23 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TBAW56		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23

WT SOT23 Price and Stock

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Nexperia PDTC144WT,215 Digital Transistors SOT23 50V .1A NPN RET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PDTC144WT,215	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.012	Buy Now
Nexperia PDTA144WT,215 Digital Transistors SOT23 50V .1A PNP RET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PDTA144WT,215	Reel			39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

WT SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1020GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)	Original	PDF	2SA1020GP OT-23 OT-23) 100mS* 2SA1020GP
Untitled Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)	Original	PDF	2SA1020PT OT-23 OT-23) 100mS*
Untitled Abstract: No abstract text available Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V	Original	PDF	WT-2301 OT-23 OT-23
WT3401 Abstract: WT-3401 Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low RDS ON R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V Rugged and Reliable	Original	PDF	WT-3401 OT-23 OT-23 WT3401 WT-3401
WT2307 Abstract: WT-2307 Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V Rugged and Reliable	Original	PDF	WT-2307 OT-23 OT-23 WT2307 WT-2307
Untitled Abstract: No abstract text available Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V	Original	PDF	WT-2301 OT-23 OT-23
2306 mosfet Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23 Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V Rugged and Reliable *SOT-23 Package	Original	PDF	WT-2306 OT-23 OT-23 2306 mosfet s1815 WT2306 WT-2306 wt2306s06 wt sot23
Untitled Abstract: No abstract text available Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V	Original	PDF	WT-2307 OT-23 OT-23
Untitled Abstract: No abstract text available Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V	Original	PDF	WT-2306 OT-23 OT-23
Untitled Abstract: No abstract text available Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V	Original	PDF	WT-3401 OT-23 OT-23
Untitled Abstract: No abstract text available Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V	Original	PDF	WT-2300 OT-23 OT-23
WT3402 Abstract: WT-3402 Text: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 4.6 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low RDS ON R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V Rugged and Reliable *SOT-23 Package	Original	PDF	WT-3402 OT-23 OT-23 WT3402 WT-3402
Untitled Abstract: No abstract text available Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V	Original	PDF	WT-3401 OT-23 OT-23
Untitled Abstract: No abstract text available Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V	Original	PDF	WT-2300 OT-23 OT-23

Untitled Abstract: No abstract text available Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V	Original	PDF	WT-2306 OT-23 OT-23
Untitled Abstract: No abstract text available Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V	Original	PDF	WT-2307 OT-23 OT-23
MOSFET 2301 Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V	Original	PDF	WT-2301 OT-23 OT-23 MOSFET 2301 s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
Untitled Abstract: No abstract text available Text: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 4.6 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V Rugged and Reliable	Original	PDF	WT-3402 OT-23 OT-23
MOSFET N-Channel 1a vgs 0.9 sot-23 Abstract: WT2300 WT-2300 diode ja Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS ON R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V	Original	PDF	WT-2300 OT-23 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 WT2300 WT-2300 diode ja
Untitled Abstract: No abstract text available Text: 8W SOT-23-5 M5 TO-92 (Z) MSOP-8 MM-8 (MM) SO-8 (M) DIP-8 (N) SOT-223 (S) TO-263 (U) TO-220 (T) TO-247 (WT) Designing With LDO Regulators Micrel Semiconductor 9W 7W 6W 5W 4W 3W 2W 1W Designing With LDO Regulators 17 Section 2: Design Charts The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst	Original	PDF	O-247 O-220 O-263 OT-223 OT-23-5 OT-143 O-220
Untitled Abstract: No abstract text available Text: Packing Details Pkg. Std. Pack Net Wt. Inner Carton Q ty /ln re r Outer Carton Box Size Carton Box Size No. of Inner Cartons per Outer Carton C apa city/ O uter Carton Gross Wt. 10 x 3.5" x 3.5" 5K 12.7" x 12.7" x 20 25 125K 25 kgs 3.75 kg/2500 pcs 10 :< 3.5" x 3.5"	OCR Scan	PDF	DO-35 DO-41 O-126 T0-220 OT-23 kg/5000 kg/2500 kg/100 gm/1000 gm/500
SIEMENS BB409 Abstract: bb409 Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/	OCR Scan	PDF	fi23SbOS BB419 OD-123 BB409 BB439 OD-323 BB512 BB515 SIEMENS BB409 bb409
EL215 Abstract: ic cir 2262 RTA 2258 Text: EL2150C/EL2157C 125 MHZ Siftglß Supply, Clamping Op A ffips HIGH PEBFORMAMCE ANÀtÛG WTÉSRATED CfflCUtîS G e n e r a l D e s c r ip t io n T he EL2150C/EL2157C are th e electronics in d u stry ’s fastest single supply op am ps available. P rio r single supply op am ps	OCR Scan	PDF	EL2150C/EL2157C EL2157C) 75V/fxs 800e-18 810e-18 EL2150C /EL2157C EL215 ic cir 2262 RTA 2258
Untitled Abstract: No abstract text available Text: o TO-247 WT o TO- in CO W) u P3 CIh SOT-22Ì (S) G o • 1-H P3 • l-H <Z) cn DIP-8 <N) <y SO-8 (M) o c - MSOP-8 M M -8 'MM i SOT-23-5 (M5) SOT-143 (M4) 00 CD LO CO 3 s X P3 TO-92 (Z) Gì S ro i <N £ •I Uh CM The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst	OCR Scan	PDF	O-247 OT-22Ì OT-23-5 OT-143 O-220

WT SOT23 Search Results

WT SOT23 Result Highlights (1)

WT SOT23 Price and Stock

Nexperia PDTC144WT,215

Nexperia PDTA144WT,215

WT SOT23 Datasheets Context Search

2SA1020GP

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WT3401

WT2307

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2306 mosfet

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WT3402

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MOSFET 2301

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MOSFET N-Channel 1a vgs 0.9 sot-23

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SIEMENS BB409

EL215

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