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    2933

    Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original     		PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54 2933 amplifier 400W 10w 900MA JESD97 M177 SD2933

    STAC244

    Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
    Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider


    Original     		PDF AN3232 STAC244B STAC265B STAC244F STAC265F STAC244 drying oven M252 substitution AN3232 C10100 M252 seho

    SD2933

    Abstract: free transistor bs 200 M177 DB-2933-54 2933 JESD97 300WPEP 300w class ab amplifier m174 0400X0
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original     		PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54 SD2933 free transistor bs 200 M177 2933 JESD97 300w class ab amplifier m174 0400X0

    M177

    Abstract: No abstract text available
    Text: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR009V1 SD2932 AM01227v1 STEVAL-TDR009V1 SD2932 M177

    SD2933

    Abstract: M177 STEVAL-TDR004V1 STEVAL-TDR00 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original     		PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 M177 STEVAL-TDR00 NI 100

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR010V1 SD2942 STEVAL-TDR010V1 SD2942 AM01227v1

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR010V1 SD2942 AM01227v1 STEVAL-TDR010V1 SD2942

    SD2943

    Abstract: austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 STEVAL-TDR005V1
    Text: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %


    Original     		PDF STEVAL-TDR005V1 SD2943 STEVAL-TDR005V1 SD2943 austerlitz 2L TRANSISTOR M177 STEVAL-TDR00

    stac2942

    Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
    Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max


    Original     		PDF STEVAL-TDR029V1 STAC2942B STEVAL-TDR029V1 STAC2942B stac2942 dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz

    M177

    Abstract: SD2943 austerlitz JESD97 STEVAL-TDR005V1 power transistor transistors equivalents
    Text: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %


    Original     		PDF STEVAL-TDR005V1 SD2943 STEVAL-TDR005V1 SD2943 M177 austerlitz JESD97 power transistor transistors equivalents

    Untitled

    Abstract: No abstract text available
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original     		PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54

    2L TRANSISTOR

    Abstract: 14981 STEVAL-TDR004V1 austerlitz M177 SD2933 Ni100 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original     		PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 2L TRANSISTOR 14981 austerlitz M177 Ni100 NI 100

    SD2932

    Abstract: NI42 Cu Alloy 42 CuMoCu NI 100
    Text: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR009V1 SD2932 AM01227v1 STEVAL-TDR009V1 SD2932 NI42 Cu Alloy 42 CuMoCu NI 100

    FERRITE TRANSFORMER 3932

    Abstract: DB-3932-30 393M M177 RF400-9 SD3932 100b choke IMD-30 IMD10
    Text: DB-3932-30 Evaluation board using 1x SD3932 for HF transmitters Features • Excellent thermal stability ■ Frequency: 2 - 30 MHz ■ Supply voltage: 100 V ■ Output power: 400 W ■ Input power 4 W max. ■ Efficiency: 62 % - 68 % ■ IMD at 400 WPEP < -25 dBc


    Original     		PDF DB-3932-30 SD3932 DB-3932-30 1xSD3932 FERRITE TRANSFORMER 3932 393M M177 RF400-9 100b choke IMD-30 IMD10

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max


    Original     		PDF STEVAL-TDR029V1 STAC2942B STEVAL-TDR029V1 STAC2942B

    austerlitz

    Abstract: SD2933 2L TRANSISTOR M177 STEVAL-TDR00 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original     		PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 NI 100

    SD2942

    Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
    Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR010V1 SD2942 AM01227v1 STEVAL-TDR010V1 SD2942 sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177

    "RF Power Amplifier"

    Abstract: 2L TRANSISTOR Ni100 SD2932
    Text: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.


    Original     		PDF STEVAL-TDR009V1 SD2932 AM01227v1 STEVAL-TDR009V1 SD2932 "RF Power Amplifier" 2L TRANSISTOR Ni100

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.


    Original     		PDF STEVAL-TDR028V1 STAC2942B STEVAL-TDR028V1 STAC2942B

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original     		PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1

    stac2942

    Abstract: STAC2942B STEVAL-TDR028V1 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B
    Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.


    Original     		PDF STEVAL-TDR028V1 STAC2942B STEVAL-TDR028V1 STAC2942B stac2942 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B

    austerlitz

    Abstract: CuMoCu Dow Corning 340 WPSII NI42 heatsink Austerlitz AN2027 M177 Corning stmicroelectronics fe58
    Text: AN2027 APPLICATION NOTE DMOS PACKAGES 1. MOUNTING RECOMMENDATIONS FOR DMOS PACKAGES : M174, M177 & M244 1.1 Mounting recommendations - Ensure holes in heatsinks are free from burrs; - Minimum depth of tapped holes in heatsinks is 6 mm; - Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure;


    Original     		PDF AN2027 austerlitz CuMoCu Dow Corning 340 WPSII NI42 heatsink Austerlitz AN2027 M177 Corning stmicroelectronics fe58