EP4C
Abstract: wl2 marking
Text: ER 4C ER 4C Series Width/Larghezza 6mm 325 100i BEIGE/BEIGE MR 35 53.3 One input two output terminals One terminale d’ingnesso two terminale d’ uscita ER 4C provides one terminal point on one side and two terminal points on the other connection side. Bridging is
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Electric74
CC4/10
EP4C
wl2 marking
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marking wl3
Abstract: marking code WL3 diode 4 pin marking code WL3 WL3 marking MD218B MD218 11-md218b WL4 MARKING DIODE DFN10 DFN-10
Text: 11-MD218B Version Issue Date File Name Total Page : A.003 : 2009-02-10 : SP-MD218B-A.003.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park
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11-MD218B
SP-MD218B-A
130mA,
10Bit
Tel886-3-5727171
Fax886-3-5727390
10-Bit
11-MD218B
marking wl3
marking code WL3 diode 4 pin
marking code WL3
WL3 marking
MD218B
MD218
WL4 MARKING DIODE
DFN10
DFN-10
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD2133 High Speed Ultrasound Beamforming Source Driver with Waveform Memory and Digital Delay Counter Features ►► Vector angle I-Q PWM mode or staircase PAM mode ►► 8-bit fast current DAC push-pull source-drive topology ►► SSTL-2 differential clock inputs up to 250MHz
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MD2133
250MHz
16-bit
DSFP-MD2133
NR031214
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD2133 High Speed Ultrasound Beamforming Source Driver with Waveform Memory and Digital Delay Counter Features General Description Applications The MD2133 contains CMOS digital logic input circuits, an 8-bit current DAC for aperture weighting control, as well as an 8-bit
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MD2133
MD2133
steps/360Â
DSFP-MD2133
NR031214
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Untitled
Abstract: No abstract text available
Text: 11-MD114 Version Issue Date File Name Total Page : A.007 : 2011/04/28 : SP-MD114-A.007.doc : 13 Motor Driver for Mobile Phone 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,
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11-MD114
SP-MD114-A
MD114
11-MD114
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Electroswitch series 24
Abstract: electroswitch 2438D Electroswitch electroswitch 24 Electroswitch series 20 2442D Electroswitch 105 2438D 03057-1-C3 Electroswitch series 40
Text: Switches and Relays For the Power Industry E L E C T R O S W I T C H NeveR a Doubt U T I L I T Y P R O D U C T S Printed in USA 5M 113 ELECTROSWITCH Corporation 180 King Avenue Weymouth, MA 02188 TEL: 781 335-5200 FAX: (781) 335-4253 www.electroswitch.com
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MARKING R2W
Abstract: transistor marking R2w marking wl3 PIC10F206 transistor r2w 436X WL3 marking TC1240A marking code WL3 T-CON Schematic
Text: MCP434X/436X 7/8-Bit Quad SPI Digital POT with Non-Volatile Memory 2009 Microchip Technology Inc. MCP43X1 Quad Potentiometers P3A P3W P3B CS SCK SDI VSS P1B P1W P1A P2A P2W P2B VDD SDO RESET WP P0B P0W P0A 20 19 18 17 16 15 14 12 12 11 1 2 3 4 5 6 7 8 9
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MCP434X/436X
MCP43X1
DS22233A-page
MARKING R2W
transistor marking R2w
marking wl3
PIC10F206
transistor r2w
436X
WL3 marking
TC1240A
marking code WL3
T-CON Schematic
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Untitled
Abstract: No abstract text available
Text: INSTRUCTION MANUAL MANUAL DE INSTRUCCIONES MANUEL D’INSTRUCTIONS CMP-200 DIGITAL CLAMP-ON METER MEDIDOR DIGITAL CON PINZA COMPTEUR NUMERIQUE A PINCES Read and understand all of the instructions and safety information in this manual before operating or servicing this tool.
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CMP-200
CMP-200
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MCP44X1
Abstract: transistor marking R2w MCP4461 MARKING R2W MCP4441 ICE 28165 tcon 102a taa 611 b12 MCP444X MCP44XX
Text: MCP444X/446X 7/8-Bit Quad I2C Digital POT with Nonvolatile Memory 2010 Microchip Technology Inc. MCP44X1 Quad Potentiometers P3A P3W P3B HVC/A0 SCL SDA VSS P1B P1W P1A 20 19 18 17 16 15 14 12 12 11 1 2 3 4 5 6 7 8 9 10 P2A P2W P2B VDD A1 RESET WP P0B P0W
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MCP444X/446X
MCP44X1
DS22265A-page
transistor marking R2w
MCP4461
MARKING R2W
MCP4441
ICE 28165
tcon 102a
taa 611 b12
MCP444X
MCP44XX
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Untitled
Abstract: No abstract text available
Text: 256 K x 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time
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16-Bit
514171BJ-50/-60/-70
16-Bit
514171BJL-50/-60/-70
HYB514171BJ/BJL-50/-60/-70
16-DRAM
GPJ09018
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marking wl3
Abstract: No abstract text available
Text: 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJ-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJL-50/-60/-70 • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • Low Power dissipation
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16-Bit
314171BJ-50/-60/-70
16-Bit
314171BJL-50/-60/-70
HYB314171BJ/BJL-50/-60/-70
16-DRAM
GPJ09018
marking wl3
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Untitled
Abstract: No abstract text available
Text: 256 K x 16-Bit EDO-DRAM HYB514175BJ -50/-55/-60 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB514175BJL-50/-55/-60 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time
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16-Bit
HYB514175BJ
HYB514175BJL-50/-55/-60
HYB514175BJ/BJL-50/-55/-60
16-DRAM
GPJ09018
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Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
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5118160
Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Text: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
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16-Bit
HYB5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
P-SOJ-42
GPJ05853
5118160
Q67100-Q1073
Q67100-Q1072
HYB5118160BSJ-50
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HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB3117805BSJ
HYB3117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1151
Q67100-Q1152
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Q67100-Q1072
Abstract: Q67100-Q1073
Text: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
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16-Bit
HYB5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
P-SOJ-42
GPJ05853
Q67100-Q1072
Q67100-Q1073
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hyb514
Abstract: 514400 Q67100-Q973 HYB514400B
Text: 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB514400BJ/BJL -50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time
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HYB514400BJ/BJL
P-SOJ-26/20
GPJ05626
hyb514
514400
Q67100-Q973
HYB514400B
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Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
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HYB3117800BSJ-50/-60/-70
3117800BSJ-50/-60/-70
P-SOJ-28-3
81max
GPJ05699
Q67100-Q1147
Q67100-Q1148
WL10
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1MX4
Abstract: HYB314400BJ/BJL-50/-60/-70
Text: 1Mx4-Bit Dynamic RAM HYB314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB314400BJ/BJL-50/-60/-70
P-SOJ-26/20
GPJ05626
1MX4
HYB314400BJ/BJL-50/-60/-70
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Q67100-Q1192
Abstract: WL3 MARKING BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
Q67100-Q1192
WL3 MARKING
BST60
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EDO DRAM
Abstract: Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
EDO DRAM
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
smd code marking wl5
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Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Text: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
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HYB3117800BSJ-50/-60/-70
3117800BSJ-50/-60/-70
P-SOJ-28-3
81max
GPJ05699
Q67100-Q1147
Q67100-Q1148
WL10
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WL15
Abstract: WL3 MARKING WL3 MARKING cODE
Text: SIEM ENS 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
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HYB5117800BJ/BSJ-50/-60
HYB3117800BJ
HYB5117800
HYB3117800
117800BJ
P-SOJ-28-4
300mil)
P-SOJ-28-3
400mil)
WL15
WL3 MARKING
WL3 MARKING cODE
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smd code marking yc 440
Abstract: siemens rw 152
Text: SIEMENS 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BJ/BSJ-50/-60 HYB3117805BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation
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HYB5117805BJ/BSJ-50/-60
HYB3117805BJ
HYB5117805
HYB3117805
117805B
P-SOJ-28-3
400mil)
PJ05699
P-SOJ-28-4
300mil)
smd code marking yc 440
siemens rw 152
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