A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station
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MW5IC2030M/D
MW5IC2030
MW5IC2030MBR1
MW5IC2030GMBR1
A113
AN1955
AN1987
MW5IC2030GMBR1
RK73H2ATD
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BFQ67W
Abstract: PMBT3640 PMBTH10 BFM520
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE
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OT143
OT223
OT323
BFT25
BF747
BF547
BF547W
BFS17
BFS17W
BF689K
BFQ67W
PMBT3640
PMBTH10
BFM520
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
96GHz
215GHz
DS120613
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A113
Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station
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MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
A113
AN1955
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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atc100a150
Abstract: power transistor gan s-band
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
atc100a150
power transistor gan s-band
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS130313
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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thermocouple gaas
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN
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RF3928280W
RF3928
RF3928
DS110317
thermocouple gaas
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XS110
Abstract: uwb transceiver uwb antenna "multipath performance" Freescale xs110
Text: Ultra-Wideband Technology XS110 UWB Solution for Media-Rich Wireless Applications XS110 Ultra-Wideband Solution Freescale’s XS110 Ultra-Wideband UWB solution provides full wireless connectivity implementing direct sequence ultra-wideband (DS-UWB) and the IEEE 802.15.3 media access
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XS110
uwb transceiver
uwb antenna
"multipath performance"
Freescale xs110
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QFN "200 pin" PACKAGE
Abstract: RFVC1803PCK-410 RFVC1803 DS110829
Text: RFVC1803 RFVC1803 Wideband MMIC VCO with Buffer Amplifier, 6GHz to 9GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 6GHZ TO 9GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+3.5dBm Typical External Resonator Not Required Single Bias Supply: +5V at 53mA
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RFVC1803
RFVC1803
-97dBc/Hz
100kHz
DS110829
QFN "200 pin" PACKAGE
RFVC1803PCK-410
DS110829
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t40c
Abstract: ma5250
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+4.0dBm Typical External Resonator Not Required Single Bias Supply: +5V at 53mA
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RFVC1802
RFVC1802
-99dBc/Hz
100kHz
DS110829
t40c
ma5250
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VCO 10GHz
Abstract: rfvc1801 RFVC1801SR
Text: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+3dBm Typical External Resonator Not Required Single Bias Supply: +5V at 52mA
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RFVC1801
10GHz
RFVC1801
-96dBc/Hz
100kHz
DS110829
VCO 10GHz
RFVC1801SR
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hatching machine
Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts
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MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
hatching machine
A113
100B8R2CW
MW4IC2230GMBR1
TAJD106K035
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Untitled
Abstract: No abstract text available
Text: WIDEBAND TRANSFORMERS High Reliability Wideband Transformers • ■ ■ ■ Small wideband transformer: 7.2 x 6.43 × 4.45 mm high 300 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating Tin-lead terminations for the best possible board adhesion
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packag00
520RFA04B1
MS099-2
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Untitled
Abstract: No abstract text available
Text: WIDEBAND TRANSFORMERS High Reliability Wideband Transformers • Small wideband transformer: 7.2 x 6.43 × 4.45 mm high ■ 300 V interwinding isolation, 1/4 Watt RF input power ■ 250 mA max current rating. Core material Ferrite Terminations tin-silver-copper over tin over nickel over phos bronze.
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ML520RFA04B1LZ
ML099-2
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Nippon capacitors
Abstract: No abstract text available
Text: Order this data sheet by MC13155/D MOTOROLA MC13155 SEMICONDUCTOR TECHNICAL DATA Advance Information Wideband FM IF WIDEBAND FM IF The MC13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This
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MC13155/D
MC13155
MC13155
1PHX33371-0
Nippon capacitors
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