Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
96GHz
215GHz
DS120613
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
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thermocouple gaas
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN
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RF3928280W
RF3928
RF3928
DS110317
thermocouple gaas
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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hatching machine
Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts
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MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
hatching machine
A113
100B8R2CW
MW4IC2230GMBR1
TAJD106K035
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hatching machine
Abstract: A113 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1
Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC
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MW4IC2020/D
MW4IC2020
MW4IC2020MBR1
MW4IC2020GMBR1
hatching machine
A113
MW4IC2020GMBR1
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AN1955
Abstract: A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC
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MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
AN1955
A113
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
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4000 watts power amplifier circuit diagram pcb l
Abstract: MW4IC2020GMBR1 MW4IC2020MBR1 TLX8-0300 25C2923
Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC
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MW4IC2020/D
MW4IC2020M
MW4IC2020MBR1
MW4IC2020GMBR1
4000 watts power amplifier circuit diagram pcb l
MW4IC2020GMBR1
TLX8-0300
25C2923
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Wideband Synthesizer
Abstract: WHSS00120 WHSS20180
Text: Wideband High Speed Synthesizer 0.01 to 18GHz The content of this specification may change without notification 1/28/10 Coaxial Wideband High Speed Synthesizer 0. 01 to 18GHz Wideband High Speed Synthesizers F latn ess Harmo nic s Freq. St ep Po w er R ang e
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18GHz
WHSS00120
WHSS20180
SS001180
Wideband Synthesizer
WHSS00120
WHSS20180
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip
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MW4IC2020M
MW4IC2020MBR1
MW4IC2020GMBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip
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MW5IC2030
885load*
MW5IC2030MBR1
MW5IC2030GMBR1
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3332-G
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband
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MW4IC2230
MW4IC2230NBR1
MW4IC2230GNBR1
MW4IC2230MBR1
MW4IC2230GMBR1
3332-G
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A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station
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MW5IC2030M/D
MW5IC2030
MW5IC2030MBR1
MW5IC2030GMBR1
A113
AN1955
AN1987
MW5IC2030GMBR1
RK73H2ATD
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BFQ67W
Abstract: PMBT3640 PMBTH10 BFM520
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE
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OT143
OT223
OT323
BFT25
BF747
BF547
BF547W
BFS17
BFS17W
BF689K
BFQ67W
PMBT3640
PMBTH10
BFM520
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A113
Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station
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MW4IC2020/D
MW4IC2020M
MW4IC2020MBR1
MW4IC2020GMBR1
A113
AN1987
MW4IC2020GMBR1
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N « E OPA3681 ] Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable S' FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 WIDEBAND INA • BROADBAND VIDEO BUFFERS UNITY GAIN STABLE: 280MHz (G = 1) • HIGH OUTPUT CURRENT: 150mA
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OCR Scan
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PDF
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OPA3681
225MHz
280MHz
150mA
OPA3681
ZZ212
17313bS
00325S2
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*1452a
Abstract: MKT3 1452a
Text: B U R R -B R O W N OPA3681 1 K Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 • WIDEBAND INA • UNITY GAIN STABLE: 280MHz (G = 1) • • • • • • • • •
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OCR Scan
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OPA3681
225MHz
280MHz
150mA
100V/ms
OPA3681
*1452a
MKT3
1452a
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