P channel 600v 20a IGBT
Abstract: HF40D120ACE IRGP20B120U-E
Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package
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IRGP20B120U-E
O-247
20KHz
O-247AD
O-247AD
P channel 600v 20a IGBT
HF40D120ACE
IRGP20B120U-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package
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IRGP20B120U-E
O-247
20KHz
O-247AD
O-247AD
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RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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Original
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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PDF
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HF40D120ACE
Abstract: IRGP20B120U-E
Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package
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Original
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IRGP20B120U-E
O-247
20KHz
O-247AD
O-247AD
HF40D120ACE
IRGP20B120U-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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Original
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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PDF
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10a 400V ultra fast diode d2pak
Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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Original
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IRGS4064DPbF
EIA-418.
10a 400V ultra fast diode d2pak
IRGS4064DPBF
IRGS4064
ultrafast diode 10a 400v
igbt 600V
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PDF
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IRGR4045D
Abstract: No abstract text available
Text: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • IC 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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Original
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IRGR4045DPbF
Pa641
EIA-481
EIA-541.
EIA-481.
IRGR4045D
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PDF
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Untitled
Abstract: No abstract text available
Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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AUIRGP4063D
AUIRGP4063D-E
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igbt 20A 1200v
Abstract: 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through NPT Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package
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Original
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IRGP20B120U-EP
O-247
20KHz
O-247AD
igbt 20A 1200v
035H
HF40D120ACE
IRGP20B120U-EP
IRGP30B120KD-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through NPT Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package
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Original
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IRGP20B120U-EP
O-247
20KHz
O-247AD
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PDF
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035H
Abstract: HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through NPT Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package
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Original
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IRGP20B120U-EP
O-247
20KHz
O-247AD
O-247AD
IRGP30B120KD-E
035H
HF40D120ACE
IRGP20B120U-EP
IRGP30B120KD-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247â
IRFPS37N50A
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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PDF
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2SA1591
Abstract: No abstract text available
Text: Ordering number: EN2 5 1 5 2SA 1591/2SC 4133 P N IV N P N Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias-Resistance Wf- i V Jpifcfc Applications //' jiiif • Switching circuit, inverter circuit, interface cirçdiÆ*^ d ^ ^ r ^ i r c u ^
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OCR Scan
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EN2515
2SA1591/2SC4133
47kft)
2SA1591
591/2SCA133
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PDF
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2SC2412KLN
Abstract: No abstract text available
Text: by>V 2SC2412KLN £ /Transistors ie 5 f + V 7 il 'y u -fte N P N b y > ' > '* $ Epitaxial Planar NPN Silicon Transistor teJiiJfc&agW iH fffl/Low Freq. Noise Amp. • Wfÿ'Tjsgl/Dimensions Unit : mm N F =1d B (Typ.) (at V c e = 6 V , IC=0.1mA, f=1KHz, Rg= 1 0 k Q )
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OCR Scan
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2SC2412KLN
23C2412KLN
SC-59
2SC2412KLN
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PDF
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2SD1664
Abstract: No abstract text available
Text: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low
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OCR Scan
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2SD1664
500mA/50mA)
/50mA)
2SB1132.
2SD1664
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PDF
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Untitled
Abstract: No abstract text available
Text: 3Ô750Ô1 0055514 A 17E D G E SOLID STATE Radiation-Hardened High-Reliability IC s 'T ^ - t y o S CMM5104/1RZ A O - 1 A 1 - z 1 8 -V D0 1 7 -A 6 A2 - 3 16 -A 7 A3 - 4 1 5 -A8 A4 - 5 14 - A 9 A5 - 6 D OUT -wF -
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OCR Scan
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CMM5104/1RZ
4096-Word
20-ns
18-pln
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PDF
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transistor OE 4k
Abstract: No abstract text available
Text: 2SB1183F5 h ~7 > v Z . $ / T ransistors O C D 4 f c w D l O O A 1 O O C R r O • Wft 1 * - > ;> h > « « ) Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. • wf?\rì£|3|/'Diinensions (Unit : mm) IJ ^ h > iii^ cT iS h F E T i> 5 o
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OCR Scan
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2SB1183F5
2SD1759F5
2SD1759F5.
SC-63
2SB1183F5
transistor OE 4k
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PDF
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2SD1733F5
Abstract: 2SB1181F5
Text: h ~7 > V ^ £ / T ransistors 2 S D 1 T 3 3 p 2SD1733F5 g i e i r ^ “ > 7 ^ y i / - t » N P N Epitaxial Planar NPN Silicon Transistors i& J iiÄ ^ ^ iitiffl/L o w Freq. Power Amp. • WfêTj-jiia/Dimensions Unit : mm • 435 1) W E , ife"P<fc -5 o V ceo — 8 0 V ? lc = 1 A
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OCR Scan
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2SD1733F5
2SB1181F5
2SB1181F5.
2SD1733F5
2SB1181F5
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1037AKLN h 7 > ÿ ^ ^ / T ransistors 2 S A 1 3 7 A K L N Epitaxial Planar PNP Silicon Transistor fëJi J!&1K&;H ÎiH ffl/L o w Frequency Low Noise • fô H • Wfé'^J'iÉIil/'Dimensions Unit : mm) 1) « a m T ' f c S o v X ï N F = 0 .5 d B (Typ.) 2) Cob A'-fê^'o C 0b = 4 p F (Typ.)
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OCR Scan
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2SA1037AKLN
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PDF
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Untitled
Abstract: No abstract text available
Text: h7 > V UMB4N •l U i n y f • UMB4N/IMB4A $ / T ransistors æl VU-T7 K^ i — Jb KV/W^ T V Isolated Mini-Mold Device — K "7 - f / ’î/lnverter Driver £ h 7 / V • Wfè^ jiH /D im e n s io n s Unit : mm « * X 1) U M T (S C -7 0 ), 2 fliCD S M T (S C -5 9 ) t l ë l —
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OCR Scan
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200mW
200mW
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PDF
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lg410b
Abstract: LG-410B yvcg LG-403 LG-404 LG-409 LG-410 FA JO2
Text: f T ^ r ^ P H O T O IN T E R R U P T E R S ACTUATOR T A PE PHOTO IN T E R R U P T E R S LG-403 LG -403«. h* f c i * j J S 4 '7 * h lC ^ - fe >-y-gBCC !?K> S WféTTîÈ DIMENSIONS Unit:m m 7 7 7 -> 5 The L G -403 actuator type photointerrupter combined
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OCR Scan
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LG-403
LG-403Â
LG-403
30GjyÂ
10Hz/fl\
Tas25
lg410b
LG-410B
yvcg
LG-404
LG-409
LG-410
FA JO2
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PDF
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WF VQE 13
Abstract: VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE21 wf vqe 23 VQE24 WF VQE 12 vqe 13
Text: FUNKAMATEUR - Bauelementeinformation Anzeigen VD/VT Koppler Vergleichslisten Optoelektronik Anzeigen, IR-Dioden, Fotodioden- und Transistoren, Koppler Lichtemitteranzeigen o Farbe WF rot rot grün grün rot rot grün grün grün grün rot rot rot grün grün
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OCR Scan
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VQE11
TLR326
TLR327
VQE21
TLG327
TLR325
VQB201
HDSP-3906)
LTS3406LP)
DL3403)
WF VQE 13
VQE 24
WF VQE 24
Wf vqe 14
vqe 23
wf vqe 23
VQE24
WF VQE 12
vqe 13
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PDF
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