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    WF-5 TRANSISTOR Search Results

    WF-5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    WF-5 TRANSISTOR Datasheets Context Search

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    P channel 600v 20a IGBT

    Abstract: HF40D120ACE IRGP20B120U-E
    Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-E O-247 20KHz O-247AD O-247AD P channel 600v 20a IGBT HF40D120ACE IRGP20B120U-E

    Untitled

    Abstract: No abstract text available
    Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-E O-247 20KHz O-247AD O-247AD

    RG105

    Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
    Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP20B120UD-E O-247AD 20KHz RG105 ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E

    HF40D120ACE

    Abstract: IRGP20B120U-E
    Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-E O-247 20KHz O-247AD O-247AD HF40D120ACE IRGP20B120U-E

    Untitled

    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418.

    IRGP20B120UD-E

    Abstract: IGBT Transistor 1200V, 25A
    Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP20B120UD-E O-247AD 20KHz IRGP20B120UD-E IGBT Transistor 1200V, 25A

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V

    IRGR4045D

    Abstract: No abstract text available
    Text: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •          IC  6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGR4045DPbF Pa641 EIA-481 EIA-541. EIA-481. IRGR4045D

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF AUIRGP4063D AUIRGP4063D-E

    igbt 20A 1200v

    Abstract: 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD igbt 20A 1200v 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E

    Untitled

    Abstract: No abstract text available
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD

    035H

    Abstract: HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD O-247AD IRGP30B120KD-E 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E

    Untitled

    Abstract: No abstract text available
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A

    420 Diode

    Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A

    2SA1591

    Abstract: No abstract text available
    Text: Ordering number: EN2 5 1 5 2SA 1591/2SC 4133 P N IV N P N Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias-Resistance Wf- i V Jpifcfc Applications //' jiiif • Switching circuit, inverter circuit, interface cirçdiÆ*^ d ^ ^ r ^ i r c u ^


    OCR Scan     		PDF EN2515 2SA1591/2SC4133 47kft) 2SA1591 591/2SCA133

    2SC2412KLN

    Abstract: No abstract text available
    Text: by>V 2SC2412KLN £ /Transistors ie 5 f + V 7 il 'y u -fte N P N b y > ' > '* $ Epitaxial Planar NPN Silicon Transistor teJiiJfc&agW iH fffl/Low Freq. Noise Amp. • Wfÿ'Tjsgl/Dimensions Unit : mm N F =1d B (Typ.) (at V c e = 6 V , IC=0.1mA, f=1KHz, Rg= 1 0 k Q )


    OCR Scan     		PDF 2SC2412KLN 23C2412KLN SC-59 2SC2412KLN

    2SD1664

    Abstract: No abstract text available
    Text: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low


    OCR Scan     		PDF 2SD1664 500mA/50mA) /50mA) 2SB1132. 2SD1664

    Untitled

    Abstract: No abstract text available
    Text: 3Ô750Ô1 0055514 A 17E D G E SOLID STATE Radiation-Hardened High-Reliability IC s 'T ^ - t y o S CMM5104/1RZ A O - 1 A 1 - z 1 8 -V D0 1 7 -A 6 A2 - 3 16 -A 7 A3 - 4 1 5 -A8 A4 - 5 14 - A 9 A5 - 6 D OUT -wF -


    OCR Scan     		PDF CMM5104/1RZ 4096-Word 20-ns 18-pln

    transistor OE 4k

    Abstract: No abstract text available
    Text: 2SB1183F5 h ~7 > v Z . $ / T ransistors O C D 4 f c w D l O O A 1 O O C R r O • Wft 1 * - > ;> h > « « ) Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. • wf?\rì£|3|/'Diinensions (Unit : mm) IJ ^ h > iii^ cT iS h F E T i> 5 o


    OCR Scan     		PDF 2SB1183F5 2SD1759F5 2SD1759F5. SC-63 2SB1183F5 transistor OE 4k

    2SD1733F5

    Abstract: 2SB1181F5
    Text: h ~7 > V ^ £ / T ransistors 2 S D 1 T 3 3 p 2SD1733F5 g i e i r ^ “ > 7 ^ y i / - t » N P N Epitaxial Planar NPN Silicon Transistors i& J iiÄ ^ ^ iitiffl/L o w Freq. Power Amp. • WfêTj-jiia/Dimensions Unit : mm • 435 1) W E , ife"P<fc -5 o V ceo — 8 0 V ? lc = 1 A


    OCR Scan     		PDF 2SD1733F5 2SB1181F5 2SB1181F5. 2SD1733F5 2SB1181F5

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037AKLN h 7 > ÿ ^ ^ / T ransistors 2 S A 1 3 7 A K L N Epitaxial Planar PNP Silicon Transistor fëJi J!&1K&;H ÎiH ffl/L o w Frequency Low Noise • fô H • Wfé'^J'iÉIil/'Dimensions Unit : mm) 1) « a m T ' f c S o v X ï N F = 0 .5 d B (Typ.) 2) Cob A'-fê^'o C 0b = 4 p F (Typ.)


    OCR Scan     		PDF 2SA1037AKLN

    Untitled

    Abstract: No abstract text available
    Text: h7 > V UMB4N •l U i n y f • UMB4N/IMB4A $ / T ransistors æl VU-T7 K^ i — Jb KV/W^ T V Isolated Mini-Mold Device — K "7 - f / ’î/lnverter Driver £ h 7 / V • Wfè^ jiH /D im e n s io n s Unit : mm « * X 1) U M T (S C -7 0 ), 2 fliCD S M T (S C -5 9 ) t l ë l —


    OCR Scan     		PDF 200mW 200mW

    lg410b

    Abstract: LG-410B yvcg LG-403 LG-404 LG-409 LG-410 FA JO2
    Text: f T ^ r ^ P H O T O IN T E R R U P T E R S ACTUATOR T A PE PHOTO IN T E R R U P T E R S LG-403 LG -403«. h* f c i * j J S 4 '7 * h lC ^ - fe >-y-gBCC !?K> S WféTTîÈ DIMENSIONS Unit:m m 7 7 7 -> 5 The L G -403 actuator type photointerrupter combined


    OCR Scan     		PDF LG-403 LG-403 LG-403 30Gjy 10Hz/fl\ Tas25 lg410b LG-410B yvcg LG-404 LG-409 LG-410 FA JO2

    WF VQE 13

    Abstract: VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE21 wf vqe 23 VQE24 WF VQE 12 vqe 13
    Text: FUNKAMATEUR - Bauelementeinformation Anzeigen VD/VT Koppler Vergleichslisten Optoelektronik Anzeigen, IR-Dioden, Fotodioden- und Transistoren, Koppler Lichtemitteranzeigen o Farbe WF rot rot grün grün rot rot grün grün grün grün rot rot rot grün grün


    OCR Scan     		PDF VQE11 TLR326 TLR327 VQE21 TLG327 TLR325 VQB201 HDSP-3906) LTS3406LP) DL3403) WF VQE 13 VQE 24 WF VQE 24 Wf vqe 14 vqe 23 wf vqe 23 VQE24 WF VQE 12 vqe 13