OCT6100
Abstract: mf 672 WE VQE 24 E G-169 manual for mcf10p-128ms
Text: O OC C T 6 1 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Increasing system density while improving voice quality The OCT6100 Series family of voice processors performs high quality echo cancellation and Voice Features • 128-672 channel G.168-2002 echo canceller
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OCT6100
16mm-square
OCT6100pb2000-032
mf 672
WE VQE 24 E
G-169
manual for mcf10p-128ms
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SBAA094
Abstract: sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3
Text: Application Report SBAA094 – June 2003 Combining the ADS1202 with an FPGA Digital Filter for Current Measurement in Motor Control Applications Miroslav Oljaca, Tom Hendrick Data Acquisition Products ABSTRACT The ADS1202 is a precision, 80dB dynamic range, delta-sigma ∆Σ modulator operating
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SBAA094
ADS1202
15-bit
SBAA094
sinc3 vhdl
code iir filter in vhdl
pulse shaping FILTER implementation xilinx
xilinx code fir filter in vhdl
VHDL for decimation filter
digital filter sinc filter
xilinx FPGA IIR Filter
it is possible to summarize the results for a Sinc3 filter and
sinc3
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tnetv3010
Abstract: TNETV WE VQE 11 E WE VQE 24 E echo cancellation amr ss7 gsm TMS320C55X watt CALEA
Text: R E A L W O R L D S Product Bulletin Telogy Software Products Integrated with TI’s DSP-Based Access Communication Processor Industry-Leading Silicon Architecture The TNETV3010 has six fixedpoint DSP cores based upon TI’s TMS320C55x DSP see figure
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TNETV3010
TMS320C55xTM
TMS320C55x
SPAT141
TNETV
WE VQE 11 E
WE VQE 24 E
echo cancellation amr
ss7 gsm
TMS320C55X watt
CALEA
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OCT6100
Abstract: OCT8304 OCT9320 OCT9400 OCT9600 adaptive noise cancellation "internet telephony server" voip echo sound processors OCT6100 and music protection feature
Text: 16-672 Channel G.168-2002 Echo Canceller o 128 ms tail/channel on all channel densities o Audio Conferencing o Extensive Signaling Tone Detection/Generation The OCT6100 Series Superior Voice Quality lead-free option, the Octasic’s OCT6100 Series of voice processors supports densities from 16 to 672 channels on a single
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OCT6100
OCT6100pb2000-052
OCT8304
OCT9320
OCT9400
OCT9600
adaptive noise cancellation
"internet telephony server" voip
echo sound processors
OCT6100 and music protection feature
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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WE VQE 24 E
Abstract: WE VQE 11 E WE VQE 24
Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V
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IRG4PH40K
WE VQE 24 E
WE VQE 11 E
WE VQE 24
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,
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1RG4BC30K-S
S54SH
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WE VQE 23 F
Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,
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1RG4BC30K-S
generati08
WE VQE 23 F
WE VQE 23 E
WE VQE 11 E
1RG4BC30K-S
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Untitled
Abstract: No abstract text available
Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high
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IRG4PH40K
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BUK856-400IZ
Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA
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bbS3T31
BUK856-400IZ
T0220AB
DD30
ignition coil IGBT
CL-8A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high
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IRG4PH50K
t141b
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Transistor BC 227
Abstract: No abstract text available
Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V
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554S2
Transistor BC 227
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transistor iqr
Abstract: No abstract text available
Text: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V
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IRG4BC20K
transistor iqr
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Untitled
Abstract: No abstract text available
Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,
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IRG4BC20K
SS45S
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CM100DY-24E
Abstract: TIC 103 prx module diode B4E BP107 E-49
Text: b4E D • VST+bSl ODDfc.732 b 22 « P R X CM100DY-24E Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 pouerex in c CM100DY-24E Dual IGBTMOD E-Series Module
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CM100DY-24E
BP107,
Amperes/1200
CM100DY-24E
Mod28
TIC 103
prx module
diode B4E
BP107
E-49
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Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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SGP06N60,
SGB06N60,
SGD06N60,
SGU06N60
SGP06N60
O-220AB
Q67041-A4709-A2
SGB06N60
O-263AB
Q67041-A4709-A4
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irg4pc50k
Abstract: irg4pc50kv irgpc50m
Text: International TOR Rectifier PD - 9.1583A IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10[is, @ 360V VCE start , T j = 125°C, V g e =15V
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IRG4PC50K
irg4pc50k
irg4pc50kv
irgpc50m
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70l12
Abstract: No abstract text available
Text: 0M120L60SB Preliminary Data Sheet OMIOOF6OSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB QM70F120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals
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0M120L60SB
OM90L120SB
QM70F120SB
MIL-S-19500,
h-275
00010S7
014S3
70l12
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Untitled
Abstract: No abstract text available
Text: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high
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IRG4PH20K
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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Untitled
Abstract: No abstract text available
Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. S PC-F005.DW G DCP # REV DESCRIPTION pow er lin e a r and s w itch in g SF 02/ 0 3/0 6
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-F005
PC-F005
BD438
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npn phototransistor sfh 309
Abstract: 3094 npn SFH 309 SFH 309-3/4
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 SFH 309 FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm
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0HF01823
npn phototransistor sfh 309
3094 npn
SFH 309
SFH 309-3/4
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,
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DS4137-6
GP400LSS12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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Untitled
Abstract: No abstract text available
Text: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data
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X2804AM
512x8
X2804A
MilStd-B83C
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