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    WE VQE 23 F Search Results

    WE VQE 23 F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3J356R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J332R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J351R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    WE VQE 23 F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


    OCR Scan     		1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


    OCR Scan     		1RG4BC30K-S S54SH PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan     		SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high


    OCR Scan     		IRG4PH20K PDF

    BUK856-400IZ

    Abstract: DD30 T0220AB ignition coil IGBT CL-8A
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA


    OCR Scan     		bbS3T31 BUK856-400IZ T0220AB DD30 ignition coil IGBT CL-8A PDF

    4327

    Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
    Text: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an


    OCR Scan     		EN4327 LC36256ALL, AMLL-70/85/10/12 AMLL-70/85/10/12 LC36256ALL/AMLL 4327 LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85 PDF

    MG25N2YS1

    Abstract: WE VQE 23 F
    Text: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)


    OCR Scan     		MG25N2YS1 MG25N2YS1 WE VQE 23 F PDF

    Untitled

    Abstract: No abstract text available
    Text: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data


    OCR Scan     		X2804AM 512x8 X2804A MilStd-B83C PDF

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


    OCR Scan     		64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D PDF

    KA-40W

    Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
    Text: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


    OCR Scan     		LM391 0W-81Ì 0W-41Ì TL/H/7146-13 LM391N; b501124 KA-40W LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N PDF

    transistor RJH 30

    Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
    Text: N a tio n a l LM391 & Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


    OCR Scan     		LM391 LM391N; TL/H/7146-13 b50ii24 transistor RJH 30 LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA PDF

    LC35256A

    Abstract: LC35256AM LC35256AS 5K4916
    Text: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products


    OCR Scan     		S4916 5K4916 LC35256A, AM-70/85/10 LC35256A 0D1535E LC35256AM LC35256AS 5K4916 PDF

    FAIRCHILD 3904

    Abstract: No abstract text available
    Text: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5


    OCR Scan     		MM74C912 FAIRCHILD 3904 PDF

    kd smd transistor

    Abstract: smd transistor wc LG Philips LM 300 W 01
    Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope


    OCR Scan     		BUK866-400 kd smd transistor smd transistor wc LG Philips LM 300 W 01 PDF

    1.8 degree bipolar stepper motor

    Abstract: No abstract text available
    Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution


    OCR Scan     		IXMS150 24-Pin 4bfib22b 1.8 degree bipolar stepper motor PDF

    RCD snubber

    Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
    Text: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster


    OCR Scan     		AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit PDF

    information applikation

    Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
    Text: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK


    OCR Scan     		PDF

    decoding technique nrz DIAGRAM

    Abstract: mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220
    Text: NATL S E H I C O N D -CUP/UO "âb M | t , s o i i a û d O b i a m 5 DP8460 Data Separator/DP8450 Data Synchronizer General Description The DP8460 Data Separator is designed for application in disk drive memory systems, and depending on system re­ quirements, may be located either in the drive or in the con­


    OCR Scan     		DP8460 Separator/DP8450 DP6464 ST506 b5D112fl 0Gbl037 decoding technique nrz DIAGRAM mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220 PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


    OCR Scan     		PDF

    circuit diagram of card lock system using ic 74ls

    Abstract: DP8460 DP645 248KS
    Text: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description frequency. After lock-on, with soft sectored disks, the MISS­ ING CLOCK DETECTED output indicates when a missing clock in an address mark field occurs so the controller can


    OCR Scan     		DP8460/DP8450 DP8460 Separator/DP8450 DP8464 ST506 DP8460" circuit diagram of card lock system using ic 74ls DP645 248KS PDF

    Untitled

    Abstract: No abstract text available
    Text: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		LA201 LA202 PDF

    smd transistor A11b

    Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
    Text: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well


    OCR Scan     		HIP6018B 12Vqc- AN9805. PDF

    Untitled

    Abstract: No abstract text available
    Text: interrii HIP6020 D ata S h e e t F e b ru a ry 1999 The HIP6020 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC integrates two PWM controllers and two linear controllers, as


    OCR Scan     		HIP6020 HIP6020 28-pin 12VDC. AN9836. PDF