7400AS
Abstract: No abstract text available
Text: Control & Measurement PRODUCT Catalogue www.trumeter.com 03 Dear Customer, It is with great pleasure and pride that I write this introduction to our brand new product catalogue. This is the best catalogue that we have ever produced and contains exciting new products, as well as all the core products that
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240VAC/DC,
7400AS
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WE 100Y
Abstract: MX29LV320T Q0-Q15 SA10
Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical)
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
112sec
35sec/max
50sec
70/90R
WE 100Y
MX29LV320T
Q0-Q15
SA10
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14B101L 1-Mbit 128K x 8 nvSRAM Features • Commercial and Industrial Temperature • SOIC and SSOP Packages • 25 ns, 35 ns, and 45 ns Access Times • “Hands-off” Automatic STORE on Power-down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is
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CY14B101L
200-ns
100-Year
CY14B101L
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY22E016L 16-Kbit 2K x 8 nvSRAM Features • SOIC Package • RoHS Compliance • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is
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100-Year
CY22E016L
16-Kbit
CY22E016L
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features • SOIC Package • RoHS Compliance • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is
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CY14E256L
256-Kbit
100-Year
CY14E256L
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KB101
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14E064L 64-Kbit 8K x 8 nvSRAM Features • SOIC Package • 25 ns, 35 ns, 45 ns and 55 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is
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CY14E064L
64-Kbit
100-Year
CY14E064L
KB101
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14B256L 256-Kbit 32K x 8 nvSRAM Features • Commercial and Industrial Temperature • SOIC and SSOP Packages • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is
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100-Year
CY14B256L
256-Kbit
CY14B256L
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Untitled
Abstract: No abstract text available
Text: CY14E064L PRELIMINARY 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the
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CY14E064L
64-Kbit
100-Year
CY14E064L
28-pin
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block diagram for automatic room power control
Abstract: CY14E256L CY14E256L-SZ25XCT CY14E256L-SZ45XCT
Text: CY14E256L PRELIMINARY 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, Hardware or Autostore® on
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CY14E256L
256-Kbit
CY14E256L
block diagram for automatic room power control
CY14E256L-SZ25XCT
CY14E256L-SZ45XCT
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CY14E064L
Abstract: CY14E064L-SZ25XCT CY14E064L-SZ45XCT
Text: CY14E064L PRELIMINARY 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the
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CY14E064L
64-Kbit
CY14E064L
avai21
28-pin
CY14E064L-SZ25XCT
CY14E064L-SZ45XCT
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CY14E256L
Abstract: CY14E256L-SZ25XCT CY14E256L-SZ45XCT
Text: CY14E256L PRELIMINARY 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, Hardware or Autostore® on
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CY14E256L
256-Kbit
CY14E256L
CY14E256L-SZ25XCT
CY14E256L-SZ45XCT
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sram pull down mismatch
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times,
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100-Year
CY22E016L
16-Kbit
CY22E016L
sram pull down mismatch
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14E064L 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns, 35ns, and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the
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CY14E064L
64-Kbit
100-Year
CY14E064L
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is
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CY14E256L
256-Kbit
100-Year
CY14E256L
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bq4845
Abstract: bq4845Y DT-26
Text: bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode
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bq4845/bq4845Y
500nA
bq4845
100-year
28-pin
bq4845Y
DT-26
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bq4845
Abstract: bq4845Y DT-26
Text: bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode
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bq4845/bq4845Y
500nA
bq4845
100-year
28-pin
bq4845Y
DT-26
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CY22E016L
Abstract: CY22E016L-SZ25XCT CY22E016L-SZ35XCT CY22E016L-SZ35XIT BUT14
Text: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,
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CY22E016L
16-Kbit
CY22E016L
CY22E016L-SZ25XCT
CY22E016L-SZ35XCT
CY22E016L-SZ35XIT
BUT14
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bq4845
Abstract: bq4845Y DT-26
Text: bq4845/bq4845Y Parallel RTC With CPU Supervisor Features General Description ➤ Real-Time Clock counts seconds through years in BCD format The bq4845 Real-Time Clock is a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, and a CPU supervisor in a 28-pin SOIC or DIP. The
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bq4845/bq4845Y
bq4845
100-year
28-pin
500nA
bq4845Y
DT-26
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2316 rom
Abstract: 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
Text: MV23SC16 _ ADVANCE INFORMATION C M O S Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect this performance data to
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MV23SC16
MV23SC16
16384-bit
27C58)
MV23SC16-012
2316 rom
2316 8 bit rom
2716 2k eprom
27C58
ic rom 2816
2816 rom
pin diagram of ic 2716
2k rom 24pin Motorola
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EQUIVALENT TIC 160D
Abstract: MHI-002 MM5311 equivalent transistor bf 175 LM5522 DM7441A lm1514 LH0032
Text: m Edge Index by Product Family Here is the new INTERFACE catalog from National Semiconductor Corporation. It contains complete information on all of National's INTERFACE products whether they be Linear, Digital, or MOS. It is the first such catalog in the industry and we hope it becomes your most im portant INTERFACE guide.
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Untitled
Abstract: No abstract text available
Text: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns
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AT27C512
AT27C51S
AT27CS1S
120ns
200mA
1FN41
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29c51002
Abstract: No abstract text available
Text: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51002T/V29C51002B
144x8-BIT)
256Kx8-bit
100yA
29c51002
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Untitled
Abstract: No abstract text available
Text: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.
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GMM7401000BS/SG-60/70/80
7401000BS/SG
GMM7401000BS/SG
GMM7401OOOBS
7401000BSG
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SHARP PRODUCT PREVIEW Rev. 1.4 LH28F002SCH-L 2-MBIT 256 KB x 8 SmartVoltage Flash MEMORY SmartVoltage Technology — 2.7V(Read-Only), 3.3V or 5V Vcc — 3.3V, 5V or 12V VPP High-Performance — 85 ns or 120 ns Read Access Time Enhanced Automated Suspend Options
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LH28F002SCH-L
40-Lead
44-Lead
48-Lead
64-Kbyte
120ns
150ns
170ns
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