Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN3 CASE 506AU−01 ISSUE O DATE 20 SEP 2005 1 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
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506AU-01
506AU
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prtr5v0u6s
Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years
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2002/95/EC.
PMBTA42
PMEG3005EL
PMEG6010EP
PMR780SN
PTVS12VS1UR
PZU13y
PMBTA42DS
PMEG3005ET
PMEG6010ER
prtr5v0u6s
csp1040
TSSOP20 FOOTPRINT
ip4065cx11
smd transistor GY sot89
IP4065CX11/LF
BV 9y transistor smd
IP4058CX8/LF
IP4280CZ10
smd transistor GY
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12L marking
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated PAM2319 DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2319 is a dual step-down current-mode, DC-DC converter. At heavy load, the constantf requency PWM control performs excellent stability and transient response. To ensure the longest
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PAM2319
PAM2319
12L marking
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NPN SOT23-6
Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Text: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589
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BCP6825
BCP6925
BCV27
BCW66H
BCW68H
BCX17
BCX19
BCX6825
BCX6916
BCX6925
NPN SOT23-6
ZDT1049
DUAL NPN SOT23-6
zdt6790
fzt849
WDFN3
BCP6825
ZXTBM322
sot223 transistor
sot23
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NSS20500UW3T2G
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
NSS20500UW3/D
NSS20500UW3T2G
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NSS40500UW3T2G
Abstract: No abstract text available
Text: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40500UW3T2G
NSS40500UW3/D
NSS40500UW3T2G
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Untitled
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
NSS20500UW3/D
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Abstract: No abstract text available
Text: NSS40500UW3T2G 40 V, 5.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40500UW3T2G
NSS40500UW3/D
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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AA112A
Abstract: IPC-7351A
Text: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10
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AP02002)
AP02001)
IPC-7351A)
DFN0402â
DFN0603â
DFN0606â
IPC-7351A,
AA112A
IPC-7351A
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WDFN3
Abstract: NSS20501UW3T2G
Text: NSS20501UW3T2G 20 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20501UW3T2G
NSS20501UW3/D
WDFN3
NSS20501UW3T2G
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Untitled
Abstract: No abstract text available
Text: Data Sheet Li-ion/Li Polymer Battery Charger AUR9801C General Description Features The AUR9801C is a highly-integrated battery charger for single-cell Li-ion or Li-polymer batteries capable of operating with an input voltage reached 2.5V. It is a complete charger device designed to work with an
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AUR9801C
AUR9801C
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Abstract: No abstract text available
Text: UM475XX 300mA, Micropower, Dual Channel VLDO Linear Regulator UM475XX TSOT23-6 WDFN8 3.0x3.0 General Description The UM475XX series are dual channel VLDO very low dropout linear regulators designed for low power portable applications. The range of output voltage is from 1.2V to 5.0V while operated
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UM475XX
300mA,
TSOT23-6
UM475XX
200mV
100mA
300mA
Lane647
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land pattern for sot109-1
Abstract: TSSOP-8 footprint and soldering sot-23 SOD87 footprint
Text: Packages Package cross reference 88 Packing methods 90 Minimized outline drawings and reflow soldering footprint 96 Package overview 86 107 87 Package cross reference Package cross reference 88 types in bold represent new products types in bold represent new products
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DO-35
DO-41
DO-34
OD80C
OD123F
HXSON12)
OT983
land pattern for sot109-1
TSSOP-8 footprint and soldering sot-23
SOD87 footprint
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NSS20500UW3T2G
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
NSS20500UW3/D
NSS20500UW3T2G
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WDFN3x3-12
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated PAM2306D DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2306D is a dual step-down current mode, DC-DC converter. At heavy load, the constant-frequency PWM control performs excellent stability and transient response. To ensure the longest
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PAM2306D
PAM2306D
WDFN3x3-12
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Untitled
Abstract: No abstract text available
Text: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS12500UW3T2G
NSS12500UW3/D
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zener 5v6 0,5W
Abstract: low voltage wireless mic ic PWM IC 8 PIN DIP 3842 varistor sck 037 I2S/PCM circuit diagram electronic choke for tube light SOD-923 zener NST3904F3T5G v sot-563 MOSFET 723 ic internal diagram
Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging
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OT-953
BRD8026-4
BRD8026/D
zener 5v6 0,5W
low voltage wireless mic ic
PWM IC 8 PIN DIP 3842
varistor sck 037
I2S/PCM
circuit diagram electronic choke for tube light
SOD-923 zener
NST3904F3T5G
v sot-563 MOSFET
723 ic internal diagram
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Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY 20V LOW SATURATION TRANSISTORS Features Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A • RSAT = 47mΩ for a low equivalent On-Resistance
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ZXTC6718MC
150mV
-220mV
DS31927
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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NCP1522
Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging
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OT-553,
BRD8026-2
BRD8026/D
NCP1522
NCP1521
NUF2030
transistor 669A
SOT-23-5 PWM
NUF2030XV6
ncp1400asn50
NCP5005
NCP1500
NCP1501
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2n7002ltig
Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or
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AND8305/D
NCP3063
2n7002ltig
TLV431ASN1T1G
LRC-LR1206-01-R400-F
2N7002LTI
MBRD360
5C BJT
NST30010MXV6T1G
power BJT PNP
BAV99LT1
MBRA340
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AUR9717AGD
Abstract: 9717A WDFN3
Text: Data Sheet Dual 1A, 1.5MHz PWM Step-down DC-DC Converter with OVP General Description Features The AUR9717 is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized using constant frequency, peak-current mode architecture with built-in synchronous power
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AUR9717
AUR9717
AUR9717AGD
9717A
WDFN3
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TRANSISTOR S1A 64 smd
Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form
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OT1061
OT1118
PSSI2021SAY
PTVS10VP1UP
TRANSISTOR S1A 64 smd
SSOP14 land pattern
ip4065cx11
KYS 30-40
4440 IC 5.1 audio amplifier board
nx1117
PHD78NQ
1n4148 sod323 t4
NX1117I33Z
PMEG3030
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