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    WC SMD TRANSISTOR Search Results

    WC SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    WC SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking wc

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage


    Original     		PDF 2SC5214 100MHz 500mA -10mA 500mA smd marking wc

    smd transistor wc

    Abstract: smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc
    Text: Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage


    Original     		PDF 2SC5214 100MHz 500mA -10mA 500mA smd transistor wc smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    smd transistor wc

    Abstract: TWT Wiring AEB01539 AEP01540 AEP01954 Q67006-A9146 Q67006-A9229 TRANSISTOR SMD MARKING CODE sn wc smd transistor
    Text: 5-V Low-Drop Fixed Voltage Regulator TLE 4268 Features • • • • • • • • • • Output voltage tolerance  2 % Very low current consumption Low-drop voltage Watchdog Settable reset threshold Overtemperature protection Reverse polarity protection


    Original     		PDF Q67006-A9229 Q67006-A9146 P-DSO-20-6 P-DSO-20-1 smd transistor wc TWT Wiring AEB01539 AEP01540 AEP01954 Q67006-A9146 Q67006-A9229 TRANSISTOR SMD MARKING CODE sn wc smd transistor

    AED03063

    Abstract: Q67006-A9357-A201K5 TLE 4263 GM AEB03068 AED03099 AEP03067 AES03069 AES03070 AET03066
    Text: 5-V Low-Drop Voltage Regulator TLE 4263 Features            Output voltage tolerance  2 % 200 mA output current capability Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof


    Original     		PDF P-DSO-14-8 Q67006-A9357-A201K5 P-DSO-14-8 AED03063 TLE 4263 GM AEB03068 AED03099 AEP03067 AES03069 AES03070 AET03066

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    mqc505-902

    Abstract: smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5
    Text: Philips Semiconductors Application note Low power single/dual frequency synthesizers: UMA1017M/1018M/1019M AM /1020M(AM) AN95102 Author: P. Hugues UMA1018M and UMA1020M/UMA1020AM low power dual frequency synthesizers UMA1017M and UMA1019M/UMA1019AM low power single frequency synthesizers


    Original     		PDF UMA1017M/1018M/1019M /1020M AN95102 UMA1018M UMA1020M/UMA1020AM UMA1017M UMA1019M/UMA1019AM TMT94008) mqc505-902 smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5

    SVID protocol

    Abstract: CCP21 IR3522 crowbar circuit current sense amplifier IC
    Text: IR3522 DATA SHEET XPHASE3TM DDR & VTT CONTROL IC DESCRIPTION The IR3522 Control IC combined with IR3506 xPHASE3TM Phase ICs implements a full featured DDR3 power solution. The IR3522 provides control functions for both the VTT single phase and VDDR (multiphase) power rails which can interfaces with any number of IR3506 ICs each driving and monitoring


    Original     		PDF IR3522 IR3522 IR3506 SVID protocol CCP21 crowbar circuit current sense amplifier IC

    Untitled

    Abstract: No abstract text available
    Text: IR3522 DATA SHEET XPHASE3TM DDR & VTT CONTROL IC DESCRIPTION The IR3522 Control IC combined with IR3506 xPHASE3TM Phase ICs implements a full featured DDR3 power solution. The IR3522 provides control functions for both the VTT single phase and VDDR (multiphase) power rails which can interfaces with any number of IR3506 ICs each driving and monitoring


    Original     		PDF IR3522 IR3522 IR3506

    ST7WIND11

    Abstract: LD1 5MM RED LED STV-365-R02 VT5365V032 m24c01-wbn6p c36 microswitch VT5365 BS308 BS308 surface finish mechanical mouse microcontroller
    Text: UM0279 User manual VT5365 wireless reference design mouse with batteries in series Introduction This user manual, along with the VT5365 datasheet will enable you to evaluate the STV-365-R02 single-chip wireless reference design mouse and assist you in the design of


    Original     		PDF UM0279 VT5365 STV-365-R02 VT5365V032 27MHz ST7WIND11 LD1 5MM RED LED m24c01-wbn6p c36 microswitch BS308 BS308 surface finish mechanical mouse microcontroller

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3513ZMTRPBF IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or


    Original     		PDF IR3513ZMTRPBF IR3513 IR3513

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    ir3513z

    Abstract: IR3513ZMTRPBF IR3513ZM current loop IR3513ZMT
    Text: IR3513Z DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513Z Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513Z to implement a stand-alone single-phase regulator or


    Original     		PDF IR3513Z IR3513Z IR3513ZMTRPBF IR3513ZM current loop IR3513ZMT

    IR3505

    Abstract: IR3513MTRPBF 1718-Type
    Text: IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or


    Original     		PDF IR3513 IR3513 IR3505 IR3513MTRPBF 1718-Type

    SMD transistor UY

    Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
    Text: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the


    Original     		PDF

    VT5365

    Abstract: ST7WIND11 smd microswitch BS308 STV-365-R03 M24C01-WBN6P BSS138 L6920 M24C02RMN6 VT5365V032
    Text: UM0273 User manual VT5365 wireless reference design mouse with parallel battery Introduction This user manual, along with the VT5365 datasheet will enable you to evaluate the STV-365-R03 single-chip wireless reference design mouse and assist you in the design of


    Original     		PDF UM0273 VT5365 STV-365-R03 VT5365V032 27MHz VT5365and ST7WIND11 smd microswitch BS308 M24C01-WBN6P BSS138 L6920 M24C02RMN6

    automotive ecu circuit

    Abstract: enlin iso TLE6286 ISO 9141 ISO9141 AED03099 AET03066
    Text: LIN-Transceiver LDO TLE 6286 Target Data Sheet 1 Overview 1.1 Features • • • • • • • • • • • • • • • • • • Single-wire transceiver, suitable for LIN protocol Transmission rate up to 20 kBaud Compatible to LIN specification


    Original     		PDF P-DSO-16-4 automotive ecu circuit enlin iso TLE6286 ISO 9141 ISO9141 AED03099 AET03066

    npn 2n3906

    Abstract: smd transistor marking 11H smd diode marking B3
    Text: NE1617A Temperature monitor for microprocessor systems Rev. 04 — 30 July 2009 Product data sheet 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a


    Original     		PDF NE1617A NE1617A 2N3904/2N3906, fa7ADS/01 NE1617ADS/G 31-Dec-10 30-Jun-11 NE1617ADS npn 2n3906 smd transistor marking 11H smd diode marking B3

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103

    Untitled

    Abstract: No abstract text available
    Text: PMN27XPE 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN27XPE OT457 SC-74)

    transistor 2N3906 smd 2A SOT23

    Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
    Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts


    Original     		PDF DO-35 DO-41 DO-15 DO-201AD DO-41P 200mW OD-80C LL-34 transistor 2N3906 smd 2A SOT23 BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23

    pin configuration transistor BC547 smd packaging

    Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
    Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors


    Original     		PDF DO-35 DO-41 C-120 0406-3K pin configuration transistor BC547 smd packaging BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe

    Untitled

    Abstract: No abstract text available
    Text: MSP-EXP430G2 LaunchPad Evaluation Kit User's Guide Literature Number: SLAU318E July 2010 – Revised March 2014 Contents . 4 . 4


    Original     		PDF MSP-EXP430G2 SLAU318E

    kd smd transistor

    Abstract: smd transistor wc LG Philips LM 300 W 01
    Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope


    OCR Scan     		PDF BUK866-400 kd smd transistor smd transistor wc LG Philips LM 300 W 01