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    WC DIODE SOT23 Search Results

    WC DIODE SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    WC DIODE SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5630 SOT23

    Abstract: FDN5630
    Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 SOT23 FDN5630

    5630 PKG

    Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 PKG 5630 SOT23 marking code 10 sot23 FDN5630

    5630 PKG

    Abstract: FDN5630 sot23 footprint
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 PKG FDN5630 sot23 footprint

    BAS35

    Abstract: MMBD1401
    Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 L22 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original     		PDF BAS35 OT-23 MMBD1401 BAS35

    BAS35

    Abstract: MMBD1401
    Text: BAS35 BAS35 CONNECTION DIAGRAMS 3 3 3 29 2 SOT-23 1 2 1 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original     		PDF BAS35 OT-23 MMBD1401 BAS35

    Untitled

    Abstract: No abstract text available
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS9925A OT-23

    FLLD261

    Abstract: FS PKG CODE 49
    Text: FLLD261 3 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V MIN @ IR = 5 uA PACKAGE TO-236AB (Low) P8A ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 -55 to +150 Degrees C


    Original     		PDF FLLD261 O-236AB FLLD261 FS PKG CODE 49

    fairchild sot-23 bav70

    Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
    Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BAV70 BAV74 OT-23 BAV70 BAV99 fairchild sot-23 bav70 sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV74 sot-23 MARKING CODE A4

    MARKING W2 SOT23

    Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
    Text: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 4148CC OT-23 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE 4148SE 4148CA MMBD1201-1205 MARKING W2 SOT23 diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE

    1N4148 SOT-23

    Abstract: 1N4148 discontinued 1N4148 MMBD914 1N4148 Sot23 PACKAGE
    Text: MMBD914 MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See 1N4148 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV


    Original     		PDF MMBD914 OT-23 1N4148 1N4148 SOT-23 1N4148 discontinued MMBD914 1N4148 Sot23 PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage


    Original     		PDF BAS35 OT-23 MMBD1401

    BAS31

    Abstract: BAV19
    Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


    Original     		PDF BAS31 OT-23 BAV19 BAS31

    BAV99

    Abstract: BAW56 Fairchild BAW56 SOT-23 bav99 code
    Text: BAW56 BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


    Original     		PDF BAW56 OT-23 BAV99 BAW56 Fairchild BAW56 SOT-23 bav99 code

    MMBD7000

    Abstract: SOT23 JEDEC standard orientation pad size
    Text: MMBD7000 MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 70 V


    Original     		PDF MMBD7000 OT-23 MMBD1201-1205 MMBD7000 SOT23 JEDEC standard orientation pad size

    BAV99

    Abstract: ua725
    Text: BAV99 BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IF AV Average Rectified Current


    Original     		PDF BAV99 OT-23 BAV99 ua725

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    transistor 1201 1203 1205

    Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
    Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1201 MMBD1204A MMBD1203 MMBD1205A transistor 1201 1203 1205 wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking

    fdfs6n303

    Abstract: F011 F63TNR F852 L86Z SOIC-16
    Text: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.


    Original     		PDF FDFS6N303 050lopment. fdfs6n303 F011 F63TNR F852 L86Z SOIC-16

    marking P2 sot-23

    Abstract: marking wa sot-23
    Text: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBD1201 OT-23 MMBD1204 MMBD1203 MMBD1205 marking P2 sot-23 marking wa sot-23

    1N4150

    Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
    Text: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage


    Original     		PDF BAS16 OT-23 BAV99 1N4150 BAS16 MMBD1201 A6 SOT-23

    MMBD1503

    Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
    Text: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.


    Original     		PDF OT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MMBD1501A MMBD1503A MMBD1504A MMBD1505A MMBD1503 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720

    sot 23-5 marking code fairchild

    Abstract: MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild
    Text: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge


    Original     		PDF FDV305N OT-23 sot 23-5 marking code fairchild MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild

    marking l30

    Abstract: 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23
    Text: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current


    Original     		PDF BAV23S marking l30 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23

    SOT23 component marking code KA

    Abstract: MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43
    Text: BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S Connection Diagrams: 3 3 BAT54 3 BAT54A Top Marking BAT54 = L4P BAT54A = L42 BAT54C = L43 BAT54S = L44 2 1 2 NC 1 BAT54S BAT54C 2 1 2 1 3 3 1 2 Schottky Barrier Diode Sourced from Process KA. Schottky Barrier Diode Sourced from


    Original     		PDF BAT54/A/C/S BAT54 BAT54A BAT54C BAT54S SOT23 component marking code KA MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43