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    WB1 99 Price and Stock

    Coilcraft Inc PWB1010-1LC

    Audio Transformers / Signal Transformers PWB Wideband RF 1:1 0.03-250 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PWB1010-1LC 3,001
    • 1 $4.97
    • 10 $4.97
    • 100 $4.97
    • 1000 $2.27
    • 10000 $2.27
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    Coilcraft Inc PWB-1-BLC

    Audio Transformers / Signal Transformers PWB Wideband RF 1:1 0.130-425 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PWB-1-BLC 859
    • 1 $5
    • 10 $5
    • 100 $5
    • 1000 $2.28
    • 10000 $2.28
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    Coilcraft Inc PWB1010LC

    Audio Transformers / Signal Transformers PWB Wideband RF 1:1 0.0035-125 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PWB1010LC 1,293
    • 1 $5.56
    • 10 $5.56
    • 100 $5.56
    • 1000 $2.54
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    Coilcraft Inc PWB-1-ALC

    Audio Transformers / Signal Transformers PWB Wideband RF 1:1 0.080-450 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PWB-1-ALC 255
    • 1 $4.45
    • 10 $4.45
    • 100 $4.45
    • 1000 $2.03
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    Coilcraft Inc SWB1010-1-SMLD

    Audio Transformers / Signal Transformers Wideband RF, SMD 250mA 1:1sec
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SWB1010-1-SMLD 397
    • 1 $4.78
    • 10 $4.78
    • 100 $4.78
    • 1000 $2.18
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    Find more WB1 99 price and stock on Findchips.com

    WB1 99 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TK 69 TSOP

    Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
    Text: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.


    Original     		PDF M5M4V16169RT-10 16MCDRAM 1024K-WORD 16-BIT) 1024-WORD M5M4V16169TP 16M-bit 576-word 16-bit TK 69 TSOP 1024KX16 1-OF-128 7WB1 AD011 M5M4V16169TP-10

    weller soldering station

    Abstract: weller soldering sp23lk SP23L WP35 Weller Electronics
    Text: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 Visit us at www.TestEquipmentDepot.com Soldering Guns & Irons n Table Top & Micro Torches n Weller has been the leading brand in professional-quality soldering equipment since 1945. In addition to its famous irons and


    Original     		PDF SP175. SP23L. D550PK. 8125N. SP23LHPK. weller soldering station weller soldering sp23lk SP23L WP35 Weller Electronics

    LR38603

    Abstract: IR3Y48A1 sharp lr38603 LR36685 P-LQFP080-1212 LR386 CCD matrix 17mA 00H-DCH
    Text: BACK LR38603 Digital Signal Processor for Color CCD Cameras LR38603 DESCRIPTION The LR38603 is a CMOS digital signal processor for color CCD video camera systems of 270 k/320 k/ 410 k/470 k-pixel CCDs with complementary color filters. The video camera system consists of


    Original     		PDF LR38603 LR38603 k/320 k/470 IR3Y48A1) LR38603) LR36685) k/410 IR3Y48A1 sharp lr38603 LR36685 P-LQFP080-1212 LR386 CCD matrix 17mA 00H-DCH

    510H CCD

    Abstract: ccd1 S5C7520X01 22 pin ccd co2 sensor circuit wb1 99 S5C7320X01 S5C7320X01-T0R0 luminance sensor KS7320
    Text: S5C7320X01 DATA SHEET PRODUCT SUMMARY 100-TQFP-1414 INTRODUCTION S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC and surveillance cameras, and outputs combined video signals. It also runs algorithms for AE/AWB and transmits them to MICOM, or carries out AE/AWB independently.


    Original     		PDF S5C7320X01 100-TQFP-1414 S5C7320X01 360H/510H/720H/760H 10BIT VSS11 KS7320 510H CCD ccd1 S5C7520X01 22 pin ccd co2 sensor circuit wb1 99 S5C7320X01-T0R0 luminance sensor KS7320

    tva0300n07

    Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
    Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,


    Original     		PDF

    WP1F

    Abstract: CMOS blemish specification QCIF LR38630 LZ34C10
    Text: LR38630 Digital Signal Processor for CIF CMOS Image Cameras LR38630 DESCRIPTION The LR38630 is a CMOS digital signal processor for color camera systems of 110 k-pixel CMOS image sensor with primary color mosaic filters. The camera system consists of CIF CMOS image


    Original     		PDF LR38630 LR38630 LZ34C10) LR38630) LQFP080-P-1212) 70MAX. WP1F CMOS blemish specification QCIF LZ34C10

    Untitled

    Abstract: No abstract text available
    Text: Cordless Soldering Tool Self Igniting Kit Contains: Tool with soldering tip, mini blow torch tip,hot knife tip, hot air tip and deflector, sponge and tray, storage case with tool holder, and instructions 99 Washington Street Melrose, MA 02176 Phone 781-665-1400


    Original     		PDF PPT10 PPT11 PPT12 PPT13

    LR38653

    Abstract: SENSOR rgb f13 LR3865 OFST10 isd 4025 WN07V ir3y5
    Text: Technical Manual Digital Signal Processing LSI for CCD （LR38653） Ver．0.31 Published in March 2006 * Specifications of the product covered herein may be subject to change without notice. General Precautions This document and the product covered herein are protected by international copyright and proprietary right laws.


    Original     		PDF LR38653 LR38653 SENSOR rgb f13 LR3865 OFST10 isd 4025 WN07V ir3y5

    WB1 SOT23

    Abstract: WB2 SOT23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 WB1 SOT23 WB2 SOT23

    LR38627

    Abstract: CIRCUIT diagram LR38627 WN02H RNG12 sharp linear ccd 5000 bit 24LC04B M24C04 0 to 20ma converted into 0 to 5v with useing ic CH451 CIRCUIT diagram tv sharp 21 BG 12
    Text: Technical Manual Digital Signal Processing LSI for CCD LR38627 Ver. 0.42 Published in Feb 2007 * Specifications of the product covered herein may be subject to change without notice. General Precautions This document and the product covered herein are protected by international copyright and proprietary right laws.


    Original     		PDF LR38627) LR38627 CIRCUIT diagram LR38627 WN02H RNG12 sharp linear ccd 5000 bit 24LC04B M24C04 0 to 20ma converted into 0 to 5v with useing ic CH451 CIRCUIT diagram tv sharp 21 BG 12

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    WB1 SOT23

    Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW

    u1 voltage regulator

    Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3
    Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 u1 voltage regulator MRF9080LSR3 MRF9080SR3

    capacitor 0805 avx

    Abstract: Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080 MRF9080LSR3 MRF9080R3
    Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080/D MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080S MRF9080SR3 capacitor 0805 avx Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080LSR3

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    MICRON diode 2u

    Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
    Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 MICRON diode 2u 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n

    Untitled

    Abstract: No abstract text available
    Text: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and


    OCR Scan     		PDF INA-50311 OT-143 INA-50311 self-aligb30 INA-30/50 INA-50311-TRI

    mitsubishi cdram

    Abstract: M5M4V16169TP-10
    Text: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P -1 0 ,-1 2 ,-1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M 5 M 4 V 1 6 1 6 9 T P is a 1 6 M -b it Cached DRAM which integrates input registers, a 1 0 4 8 5 7 6 - w ord by 1 6 - bit


    OCR Scan     		PDF CDRAM16M 1024K-WORD 16-BIT 1024-WORD mitsubishi cdram M5M4V16169TP-10

    Untitled

    Abstract: No abstract text available
    Text: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024


    OCR Scan     		PDF REV22) M5M4V16169RT-10 1024K 16-BIT) 024-W 4V16169R 16M-bit 576-word 16-bit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.


    OCR Scan     		PDF M5M4V16169RT-10 16MCDRAM 1024K-WQRD 16-BIT) 1024-WQRD 16169TP 576-w 16-bit

    Untitled

    Abstract: No abstract text available
    Text: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a


    OCR Scan     		PDF REV22) M5M4V16169TP-10 1024K 16-BIT) 024-W 4V16169TP 576-word 16-bit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P - 1 0 ,- 1 2 ,- 1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1048576-word by 1 6 - bit


    OCR Scan     		PDF CDRAM16M 1024K-WORD 16-BIT 1024-WORD M5M4V16169TP 16M-bit 1048576-word

    8x16s

    Abstract: 1kx16 AD-011M ac45 M5M4V16169TP-10 m5m4v16
    Text: v ^ EV 2 2 MITSUBISHI LSls M5M4V16169TP-10,-12,-15 16MCDRAM:16M 1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM DESCRIPTION 1. 2. The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a


    OCR Scan     		PDF M5M4V16169TP-10 16MCDRAM 1024K-WORD 16-BIT) 1024-WORD M5M4V16169TP 16M-bit 576-word 16-bit 8x16s 1kx16 AD-011M ac45 m5m4v16

    WP1F

    Abstract: BLC 902 IR3Y38M CQ 229 CIRCUIT diagram tv sharp 21 BG 12 lw 293 SHARP camera CIF LR38630 LZ34C10 I04M
    Text: SHARP LR 3 8 6 3 0 S P E C I S S U E T o No. EL109139 : Septem ber 30, 1998 ;_ SPEC I F I CAT I ONS Product Type Model No. DIGITAL SIGNAL PROCESSOR FOR CIF CMOS-IMAGER CAMERA LR38630 ^?This specification contains 39 pages including the cover and appendix.


    OCR Scan     		PDF EL109139 LR38630 LQFP80â AA1114 LR38630 CV626 WP1F BLC 902 IR3Y38M CQ 229 CIRCUIT diagram tv sharp 21 BG 12 lw 293 SHARP camera CIF LZ34C10 I04M