DIODE W7
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol
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KDS114WS
OD-323
OD-323
DIODE W7
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Sod marking w7
Abstract: DIODE W7
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
Sod marking w7
DIODE W7
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marking code w7
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
marking code w7
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W7 sod 323
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
W7 sod 323
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Untitled
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol
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KDS114WS
OD-323
OD-323
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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Tantalum N8
Abstract: 330uF NTP107M10TRD MARKING CODE j8 63VDC tantalum A8 10VDC 680uf A7 marking code
Text: Rev2 - April 2008 www.niccomp.com Technical Inquiries: tpmg@niccomp.com COMPONENT MARKING NTP SERIES - POLYMER CATHODE TANTALUM CHIP CAPACITORS ANODE + BAND; SILVER DATE CODE IDENTIFIER “x” = OCTOBER 2008 CAPACITANCE CODE ”N8” = 330uF VOLTAGE CODE “j” = 6.3VDC
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330uF
NTP337M6
330uF
NTP107M10TRD
100uF
10VDC
10VDC
16VDC
100uF
150uF
Tantalum N8
NTP107M10TRD
MARKING CODE j8
63VDC
tantalum A8
680uf
A7 marking code
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D482235
Abstract: uPD482234-70 icc20 upd482234 uPD482235-70 IO5114 PD482234 PD482234-60 ICC19
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT Description The µPD482234 and µPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262, 144 words x 8 bits memory cell array structure. The serial access port can perform clock operations
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PD482234,
256K-WORD
PD482234
PD482235
S44G5-80-7JF4
PD482235.
D482235
uPD482234-70
icc20
upd482234
uPD482235-70
IO5114
PD482234-60
ICC19
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MARKING W1 AD
Abstract: W32 MARKING DB25 Breakout Board adapter Applied Precision Probe card manufacturing
Text: iceMASTER AD User’s Manual for Microsoft Windows R Document Version: 1.01 Copyrightã 1998 by MetaLink Corporation All rights are reserved. This manual may not, in whole or part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine readable form without the prior agreement and written permission of MetaLink Corporation.
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908az60
Abstract: MC68HC908AZ32 MC68HC908AZ32 64 pin MC68HC908AZ32 QFP64 908AZ32 MC68HC908As32 52 pin 08AZ32 EM08QA24 MC68HC08AZ32 P2C SOT223
Text: M68EM08AFUM/D SEPTEMBER 1998 M68EM08 A-FAMILY EMULATOR MODULE USER’S MANUAL MOTOROLA Inc., 1998; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. Motorola does not
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M68EM08AFUM/D
M68EM08
MMDS0508:
908az60
MC68HC908AZ32
MC68HC908AZ32 64 pin
MC68HC908AZ32 QFP64
908AZ32
MC68HC908As32 52 pin
08AZ32
EM08QA24
MC68HC08AZ32
P2C SOT223
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
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marking u6
Abstract: marking U7 MARK A7 Marking N8 tantalum A8 TPSF marking s11 marking Y6 TPf series
Text: Marking ●C2, C3, D2E, D3L size TPB, TPE, TPF series ●D4, D4D size (TPD, TPE series) Rated capacitance 470 e 58 L Rated capacitance 680 e 57 Anode(+) Lot. No.※2 ●B09, B1, B1G, B15G, B2 size (TPB, TPC, TPG, TPU, TQC series) Rated capacitance※3
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Untitled
Abstract: No abstract text available
Text: Zener Diodes 1W Type No. Device Marking Code PL3V6C PL3V9C PL4V3C PL4V7C PL5V1C PL5V6C PL6V2C PL6V8C PL7V5C PL8V2C PL9V1C PL10C PL11C PL12C PL13C PL15C PL16C PL18C PL20C PL22C PL24C PL27C PL30C PL33C PL36C PL39C PL43C PL47C PL51C PL56C PL62C PL68C PL75C PL82C
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PL10C
PL11C
PL12C
PL13C
PL15C
PL16C
PL18C
PL20C
PL22C
PL24C
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NAS662C2R4
Abstract: MS24693 nas1635 MS24693-C3 DB9 drawing Lantronix cable pinout MS518 lf 4052 LG Air Conditioning Repair LG monitor 14 inch wiring diagram
Text: IM-493 IM-493 Model 8310-XX-X-XN Operation & Installation Manual Model 8310 SmartStep Programmable Attenuator Units w/Ethernet This documentation may not be reproduced in any form, for any purpose unless authorized in writing by Aeroflex / Weinschel, Inc.
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IM-493
8310-XX-X-XN
89/336/EEC
93/68/EEC,
73/23/EEC
EN50081-1:
EN50082-1:
EN61010-1:
NAS662C2R4
MS24693
nas1635
MS24693-C3
DB9 drawing
Lantronix cable pinout
MS518
lf 4052
LG Air Conditioning Repair
LG monitor 14 inch wiring diagram
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ZENER DIODE J3
Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
Text: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.
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1SZ57--1SZ59
1SZ59)
1SZ58
1SZ59
ZENER DIODE J3
1SZ57-1SZ59
ZENER C 3V
zener diode marking 5d
zener diode T3 Marking
zener diode mark J3
1SZ57
1SZ57 diode
diode j5d
zener diode T3
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os 135 diode
Abstract: ZENER C 3V diode j5d W 135 Zener 1SZ57 ZENER Vr 3V 1sz58 1SZ59 toshiba marking mc toshiba lot number type
Text: W7 TOSHIBA {DIS CR ETE /OP TO} 9097250 TOSHIBA ÍmTI^O^SSO □ D I S C R E T E / O P T O 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Temperature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in m m VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.
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00ci3fll
1SZ57â
1SZ59
1SZ59)
1SZ58
--1SZ57
1SZ57
os 135 diode
ZENER C 3V
diode j5d
W 135 Zener
1SZ57
ZENER Vr 3V
1sz58
1SZ59
toshiba marking mc
toshiba lot number type
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7w74f
Abstract: 7w74
Text: TOSHIBA TC7W74F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr7\ATMF Tm r 7m W • m w w « m m g w w7 » JF mm I I D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7W74 is a high speed C2MOS D FLIP FLOP fabricated with silicon gate C^MOS technology.
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TC7W74F/FU
TC7W74
7w74f
7w74
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Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE CERAMIC CHIP CAPACITORS CLASS 1 CEC 1 . CEC 2 . CEC 14. CEC 18 M o d u le n o v m a lis elS lim dtm l m od el t It 1 ] C E C 14 CEC 2 O p tio n eia m a n d T in n cd option rE C ' E C Te < C o n d itio n n e m e n t p o s s ib ie /P A<w7?/g m c k a e m e
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P500s.
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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CDD11610
Abstract: diode marking w2 diode marking w8 marking W6 diode W6 Diode
Text: mNERBL Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15607-1800 412 925-7272 Powerex, Europe, S.A. 426 Avenue G. Durand, BP107, 72003 La Êtana, France (43) 41.14.14 Powerex Rectifier and Thyristor Modules are designed for use in a variety of switching applications.
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BP107,
CD410830
CD410860
ED410620,
ED410826,
ED411220,
ED411226,
ED411620,
ED411626
LD410860,
CDD11610
diode marking w2
diode marking w8
marking W6 diode
W6 Diode
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BS9365
Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
f025
BAW68
marking Z9
F008
BZX88-C5V1
2N2475
BFS46A
BZX88-C5V6
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DSB010
Abstract: DS442X
Text: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)
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PDF
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Do-35
Do-34
Do-34S
LL-34
DSB010
DS442X
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DCC010
Abstract: DO-35 C3 gmb01 MARKING cp6
Text: SA0YO Q u i c k G u i d e To Small ole Ver-y Rast Swi t c h l n g Type No. Remarks :Marking High withstand Voltage Electrical Characteristics/Ta-251C Package No. General purpose VR 10 (V) (mA) (mA) IF (mA) max (V) IR max VR (V) (ßV trr max (ns) IF (mA)
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Characteristics/Ta-251
DS442X
GMA01
GMB01
DS446
DS462
GMA01U
GMB01U
GMA02
DS441
DCC010
DO-35 C3
MARKING cp6
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