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    W332 Price and Stock

    VENKEL LTD CR0201-20W-3324FT

    RES 3.32M OHM 1% 1/20W 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR0201-20W-3324FT Reel 30,100 15,000
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    Venkel Ltd. CR0201-20W-3324FT Reel 30,000 8 Weeks, 4 Days 15,000
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    Bourns Inc CR1206-JW-332ELF

    RES SMD 3.3K OHM 5% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR1206-JW-332ELF Reel 30,000 5,000
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    • 10000 $0.00616
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    Avnet Abacus CR1206-JW-332ELF Reel 15 Weeks 25,000
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    VENKEL LTD CR1206-8W-332JT

    RES 3.3K OHM 5% 1/8W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR1206-8W-332JT Reel 25,000 5,000
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    Bristol Electronics CR1206-8W-332JT 7,380
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    Venkel Ltd. CR1206-8W-332JT Reel 25,000 11 Weeks, 3 Days 5,000
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    VENKEL LTD CR0805-10W-3320FT

    RES 332 OHM 1% 1/10W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR0805-10W-3320FT Reel 13,250 5,000
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    Bourns Inc CR0201-JW-332GLF

    RES SMD 3.3K OHM 5% 1/20W 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR0201-JW-332GLF Reel 10,000 10,000
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    • 10000 $0.00337
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    CR0201-JW-332GLF Cut Tape 9,940 1
    • 1 $0.1
    • 10 $0.019
    • 100 $0.0094
    • 1000 $0.00536
    • 10000 $0.00385
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    RS CR0201-JW-332GLF Bulk 13 Weeks 10,000
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    Avnet Abacus CR0201-JW-332GLF Reel 15 Weeks 10,000
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    Find more W332 price and stock on Findchips.com

    W332 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    W3320 PulseLarsen Antennas RF/IF and RFID - RF Antennas - RF ANT 868MHZ/915MHZ CHIP SLD Original PDF
    W3320-K PulseLarsen Antennas RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD W3320 W/ SMA FEMALE Original PDF
    W3329 Pulse Electronics ANT EMBD 868MHZ FR4 Original PDF
    W332M64V-100BM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-100SBM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-125BM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-125SBM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-133BM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-133SBM White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-XBX White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M64V-XSBX White Electronic Designs 32Mx64 Synchronous DRAM Original PDF
    W332M72V-100BM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-100SBM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-125BM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-125SBM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-133BM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-133SBM White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM Original PDF
    W332M72V-XSBX White Electronic Designs 32Mx72 Synchronous DRAM Original PDF

    W332 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A104

    Abstract: A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x
    Text: W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX White Electronic Designs 256MB SDRAM and DDR PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS BALLS „ 32M x 64 SDRAM „ Eutectic solder Sn63/Pb37 „ 32M x 72 SDRAM „ Diameter = 0.762mm 0.030 Nominal


    Original     		PDF W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX 256MB Sn63/Pb37 762mm 0004-X EIA/JESD22 A104 A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x

    Untitled

    Abstract: No abstract text available
    Text: W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF W332M72V-XSBX 32Mx72 133MHz 256MByte 728-bit 133MHz

    W333

    Abstract: W332
    Text: SAW Filters TMX W332 Low Loss SAW Bandpass Filter - WIRELESS AUDIO - RF Specification Rev-3 Technical overview .P01 Matching Network Configuration .P01


    Original     		PDF

    W332M64V-XBX

    Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
    Text: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XBX 32Mx64 133MHz 256MByte 728-bit 100MHz 125MHz W332M64V-XBX WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX

    JESD22

    Abstract: SN63 PB37 A104 A108 A113 W332M64V-XSBX
    Text: W332M64V-XSBX Application Note W332M64V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and


    Original     		PDF W332M64V-XSBX W332M64V-XSBX Sn63/Pb37 EIA/JESD22 200A00004-X) AN0045 W223M64V-XSBX JESD22 SN63 PB37 A104 A108 A113

    W332M72V-XSBX

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF W332M72V-XSBX 32Mx72 133MHz 256MByte 728-bit 133MHz W332M72V-XSBX

    Untitled

    Abstract: No abstract text available
    Text: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a


    Original     		PDF W332M72V-XBX 32Mx72 125MHz 256MByte 728-bit W332M72-ESB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a


    Original     		PDF W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit 133MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M64V-XSBX ADVANCED* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 125MHz 256MByte 728-bit W332M64V-ESSB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M64V-XSBX PRELIMINARY* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 125MHz 256MByte 728-bit

    W332M64V-XBX

    Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
    Text: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XBX 32Mx64 133MHz 256MByte 728-bit 100MHz 125MHz W332M64V-XBX WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF W332M64V-XSBX 32Mx64 133MHz W332M64V-XSBX 256MByte 133MHz

    BGA PACKAGE thermal resistance

    Abstract: W332M64V-XSBX PDQ22
    Text: White Electronic Designs W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 133MHz 256MByte 728-bit 133MHz BGA PACKAGE thermal resistance W332M64V-XSBX PDQ22

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit access/precharge437-1520 133MHz

    W332M72V-XBX

    Abstract: WEDPN16M72V-XB2X WEDPN4M72V-XB2X WEDPN8M72V-XB2X
    Text: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a


    Original     		PDF W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit 133MHz W332M72V-XBX WEDPN16M72V-XB2X WEDPN4M72V-XB2X WEDPN8M72V-XB2X

    w332

    Abstract: No abstract text available
    Text: SAW Filters TMX W332 Low Loss SAW Bandpass Filter - WIRELESS AUDIO - RF Specification Rev-2 Technical overview .P01 Matching Network Configuration .P01


    Original     		PDF

    W332M72-ESSB

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XSBX ADVANCED* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF 32Mx72 125MHz W332M72V-XSBX W332M72V-XSBX 256MByte W332M72-ESSB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XSBX PRELIMINARY* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF 32Mx72 125MHz W332M72V-XSBX W332M72V-XSBX 256MByte W332M72-ESSB

    diode A2-9

    Abstract: W332M72V-XSBX
    Text: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF W332M72V-XSBX 32Mx72 133MHz 256MByte 728-bit 133MHz diode A2-9 W332M72V-XSBX

    W332M72V-XSBX

    Abstract: No abstract text available
    Text: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing


    Original     		PDF W332M72V-XSBX 32Mx72 133MHz 256MByte 728-bit acc32M 133MHz W332M72V-XSBX

    Untitled

    Abstract: No abstract text available
    Text: W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF W332M64V-XBX 32Mx64 133MHz 256MByte 728-bit

    Untitled

    Abstract: No abstract text available
    Text: W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit 133MHz

    KNC 201 15

    Abstract: KNC 201 35 KNC 201 KNC 201 11 C9014 knc 201 39 c9014 ca 08 C9024 f827 w112r
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF CC78K0S 78K0S U16654JJ1V0UM001 U16654JJ1V0UM 4CC78K0S. CCC78K0S. WindowsWindowsNTMic29, KNC 201 15 KNC 201 35 KNC 201 KNC 201 11 C9014 knc 201 39 c9014 ca 08 C9024 f827 w112r

    C9014

    Abstract: C9024 w849 w745 F312 stk 0177 transistor c9014 a006 DGL-04 C9014 transistor datasheet
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF U16654EJ1V0UM C9014 C9024 w849 w745 F312 stk 0177 transistor c9014 a006 DGL-04 C9014 transistor datasheet