G577BSR91U
Abstract: M470T5663EH3-CF7 AF82801IBM 7SZ14 R5538 BA92-05617A NP-R420-XA02RU BA96-04188A samsung ba92 TPS51125RGER
Text: - This Document can not be used without Samsung's authorization - Part List : NP-R420-XA02RU Ver. Location 0001 A1001 Part Number BA46-11159A S/W CD;UTILITY,QingDao-Int,Vista,1.0,Exp Part Name & Specification Q'ty SA/SNA 1 SA NP-R420-XA02RU Parent Part 0001
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NP-R420-XA02RU
A1001
B0001
B0003
B0005
B0009
B0010
B0013
B0204
G577BSR91U
M470T5663EH3-CF7
AF82801IBM
7SZ14
R5538
BA92-05617A
NP-R420-XA02RU
BA96-04188A
samsung ba92
TPS51125RGER
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AF82801IBM
Abstract: M470T5663RZ3-CF7 TS-L633 KSB0705HA m470t5663qz3-cf7 M470T5663EH3-CF7 RT8207GQW TM-01020-003 tps51620 KSB0705HA-8J1X
Text: - This Document can not be used without Samsung's authorization - 5.Part List NP-R469-XS01RU Location Part Code Specification Qty SA/SNA A0010 3903-000115 CBF-POWER CORD;DT,EU,CP3,IEC320 C5,250/2 1 SA A1001 BA46-10703A S/W CD;UTILITY,BONN,CDS6,-,All_Lang,CD,1
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NP-R469-XS01RU
A0010
A1001
B0001
B0003
B0005
B0009
B0010
B0013
AF82801IBM
M470T5663RZ3-CF7
TS-L633
KSB0705HA
m470t5663qz3-cf7
M470T5663EH3-CF7
RT8207GQW
TM-01020-003
tps51620
KSB0705HA-8J1X
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Untitled
Abstract: No abstract text available
Text: SKD 100 ?$[¥ ?$$¥7 ?M$¥ KM V <>> ] SB'+ .%48'. -%4U ? `>> W>> <J>> <`>> ? `>> W>> <J>> <`>> SA. V ^H _NU [XM <>>Y>` [XM <>>Y>W [XM <>>Y<J [XM <>>Y<` <=>> <=>> [XM <>>Y<= Symbol Conditions KM A. V WI _N -48'.)-;/ +%,8 A, V `I _N7 .1, -( <U A, V `I _Na O<H]Y<JI SO<]Y<J>U
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A12//
64-F/87
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Untitled
Abstract: No abstract text available
Text: SKD 60 ?$[¥ ?$$¥7 ?M$¥ KM V => ] SB'+ .%48'. -%4U ? _>> W>> <J>> <_>> ? _>> W>> <J>> <_>> SA. V <>J ^NU [XM =>Y>_ [XM =>Y>W [XM =>Y<J [XM =>Y<_ <=>> <=>> [XM =>Y<= Symbol Conditions KM A. V WI ^N -48'.)-;/ +%,8 A, V _I ^N7 .1, -( <U A, V _I ^Na O<H]Y<JI S$_]Y<J>U
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A12//
64-F/87
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Untitled
Abstract: No abstract text available
Text: TSOP75S.W www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Optimized for Sony and Cisco SA codes • Supply voltage: 2.5 V to 5.5 V
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TSOP75S.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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V3022
Abstract: 125OC 850C
Text: R EM MICROELECTRONIC-MARIN SA V3022 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built in crystal with digital trimming and temperature compensation facilities
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V3022
H/309
V3022
125OC
850C
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zener diode 6w
Abstract: zener 24v 5w 36V zener MODEL SA 06-24-5S SA diode SA06 06-24-12S
Text: Encapsulated DC-DC Converter SA06 SERIES 6 Watts KEY FEATURES Power Modules for PCB Mounting Regulated Output Low Ripple and Noise 2-Year Product Warranty ELECTRICAL SPECIFICATIONS Model No. Max. output wattage W Input voltage (V.DC.) SA 06-24-3.3S
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8-36V)
06-24-5S
06-24-12S
06-24-15S
06-24-24S
1500mA
zener diode 6w
zener 24v 5w
36V zener
MODEL SA
06-24-5S
SA diode
SA06
06-24-12S
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8 hour delay timer
Abstract: bu 808 df V3022 8 hour delay on timer Digital Alarm Clock by ttl Digital Alarm Clock by using ttl pulse load calculation formula for single pulse V3022SO28B 850C V3022SO28A
Text: R EM MICROELECTRONIC-MARIN SA V3022 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities
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V3022
V3022SO28B
V3022SO28A
28-pin
V3022
J/382
CH-2074
8 hour delay timer
bu 808 df
8 hour delay on timer
Digital Alarm Clock by ttl
Digital Alarm Clock by using ttl
pulse load calculation formula for single pulse
V3022SO28B
850C
V3022SO28A
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125OC
Abstract: V3023 V3023SO28A V3023SO28B 24 hour Digital clock circuit
Text: R EM MICROELECTRONIC-MARIN SA V3023 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities
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V3023
V3023SO28B
V3023SO28A
28-pin
V3023
J/383
CH-2074
125OC
V3023SO28A
V3023SO28B
24 hour Digital clock circuit
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125OC
Abstract: V3023
Text: R EM MICROELECTRONIC-MARIN SA V3023 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration Typical Operating Configuration Features WR or R/W RD or DS IRQ n Built-in crystal with digital trimming and temperature compensation facilities
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V3023
H/320
125OC
V3023
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ORIGIN ELECTRIC
Abstract: MD20SH05K MD36SH05K MD50SH05K MDA65SN1K
Text: SILICON HIGH VOLTAGE RECTIFYING DIODES MD r jSH05K, MDA65SN1K O R I G I N E L E C T R I C CO LTD •¡ttS • S 3 E T> I • PB#JIffi>SA<lk V £ # 'S C * # l. 2 . W l E A ' * * ^ '0 MAX65kV sa f#4SS>arp|i æ >1-* 3 » Electrical Absolute maximum ratings
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MAX65kV)
jSH05K,
MDA65SN1K
bfil3Q74
MD20SH05K
MD36SH05K
MD50SH05K
50HzjE5S
ORIGIN ELECTRIC
MDA65SN1K
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62309P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62309P, TD62309F 6CH LO W SA TU RA TIO N H IGH-CURRENT SIN K DRIVER The TD62309P, TD62309F are comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching
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TD62309P/F
TD62309P,
TD62309F
TD62309F
450mA
/700m
DIP-16pin
PFP-16pin
TD62309P
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Untitled
Abstract: No abstract text available
Text: SA M S U N G SEMICONDUCTOR INC OS KS54HC5TOS ÿ à f à Ï T & Â KS74HCTLS A w X / W * De | 7 ^ 4 1 4 5 OODhbOE 8-Bit Latch/Register with Readback Preliminary Specifications FEATURES DESCRIPTION • 1 0 port configuration enables output data back onto input bus
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KS54HC5TOS
KS74HCTLS
54/74LS
KS74HCTLS:
7Tb414S
14-Pin
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m61266
Abstract: M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP
Text: 2005.10 Everywhere you imagine. _ ICs for video signals j i / Z t t Z r f s n y w w w .re n e sa s.co m • - « i * U -'^ 3 ^ t? |gr 0 W & à i T 3 Pursuing high quality with one-chip solutions R enesas ICs for video signals. c R T *» è *f« a o f '^ '/ U
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RJJ01
F0006-0400
m61266
M61262
m61260
r2j101
R2s*15102np
r2j10160
ha118225f
M61266FP
r2j10160-xxxfp
R2S15102NP
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Untitled
Abstract: No abstract text available
Text: TELE F U N K E N SA 101 UKW -Diode für M eßzw ecke Technische D aten 1. Abm essungen der Röhre 2. Röhrenfassung Die Röhre ist für Meßzwecke entwickelt w orden und soll direkt in die Schaltung eingelötet w erden. Eine Verw endung der Röhre m it Fassung ist nicht v o r
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300Q1US41
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V
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MG300Q1US41
00A/ius
300Q1US41
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1625AM
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Transimpedance amplifier 140MHz SA5212A DESCRIPTION PIN CONFIGURATION The SA 5212A is a 14ki2 transim pedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications w here very low
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140MHz)
SA5212A
14ki2
140MHz
1625AM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V
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MG300Q1US41
Colleetor-Emi200
00A/ius
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TD62301,302P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62301P, TD62301F, TD62302P, TD62302F 7CH LO W SA T U R A T IO N SIN K DRIVER The TD62301P/F and TD62302P/F are comprised of seven NPN low saturation drivers. All units feature integral clamp diodes for switching
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TD62301
302P/F
TD62301P,
TD62301F,
TD62302P,
TD62302F
TD62301P/F
TD62302P/F
/200m
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Untitled
Abstract: No abstract text available
Text: O rdering num ber : EN821C BTD4M N0.821C SA W O r Silicon Planar Type i Bidirectional Diode F eatu res - Small size and light weight. • DHD type package. A bsolute M axim um R atings atT a = 25°C Peak C urrent Ip f= 120Hz;,pulse width lOps Junction Tem perature
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EN821C
120Hz;
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH08A06 sa / sov FEATURES o Sim ilar to T0-220AB Case o Fully M olded Isolation o Dual Diodes-Cathode Common o L o w Forward V oltage Drop o Low Power, Loss, H igh Efficiency o H igh Surge Capability O T j = 150’C operation MAXIMUM RATINGS
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T0-220AB
FCH08A06
FCH08A06
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SAC10
Abstract: SAC12 SAC15 SAC18 SAC22 SAC26 SAC45 SAC50
Text: M ierosemiCorp. I The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore inform ation call: 602 941-6300 LOW CAPACITANCE TRANSIENT ABSORPTION ZENER Features • • • • S A C 5 .0 thru SA C 50 500 W ATTS PEAK PULSE POWER LOW CAPACITANCE SM ALL SIZE (DO-41)
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SAC50
DO-41)
SAC10
SAC12
SAC15
SAC18
SAC22
SAC26
SAC45
SAC50
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MSD6150
Abstract: No abstract text available
Text: MSD6150 silicon SILICON EPITAXIAL DUAL DIODE SILICON EPITAXIAL DUAL DIODE COMMON ANODE . . . designed fo r general-purpose co n su m e r applications. • H igh B re a k d o w n V o ltag e — • S pa ce -Sa ving Package w ith C o m m o n A n o d e C o n fig u ra tio n
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MSD6150
100/iAdc
MSD6150
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FSH05A04 FSH05A04B sa / 40v FEATURES o Sim ilar to TO-220AC and TO-220AB Case o Fully Molded Isolation Case o L o w Forw ard V oltage Drop O Low Pow er Loss, High Efficiency •“MAX5’ «■«■UltMAX O High Surge Capability o T j = 150”C operation
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FSH05A04
FSH05A04B
O-220AC
O-220AB
FSH05A.
FSH05A
bbl5123
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