rfha1003
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
RFHA1003
512MHz,
RFHA1003
30MHz
512MHz
DS120102
|
PDF
|
Gan hemt transistor RFMD
Abstract: DS111007 tl 4941
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS111007
Gan hemt transistor RFMD
DS111007
tl 4941
|
PDF
|
op-amp 743
Abstract: 174ra
Text: RF2690 Preliminary W-CDMA RECEIVE AGC AND DEMODULATOR Typical Applications • W-CDMA Systems Product Description The RF2690 is an integrated complete IF AGC amplifier and quadrature demodulator designed for the receive section of W-CDMA applications. It is designed to amplify
|
Original
|
RF2690
RF2690
RF9678
RF2638
25GHz
20-pin,
-40oC)
190MHz,
760MHz
-10dBm,
op-amp 743
174ra
|
PDF
|
MDL-30-R
Abstract: CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
Text: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. • • • • • 87.5 ÷ 108 MHz 28 Volts Input / Output 50 Ω - 50 Ω Pout : 30 W
|
Original
|
MDL30-R
BLF245
120MHz
30MHz
GR00070
MDL-30-R
CLASS AB MOSFET RF amplifier
Richardson Electronics
BLF245
RF MOSFET CLASS AB
|
PDF
|
high frequency high power transistor 300mhz bjt n
Abstract: RF2318
Text: RF2318 LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations • Broadband Gain Blocks E S 0.196 0.189 W N E 8° MAX 0° MIN ! GaAs HBT SiGe HBT InGaP/HBT GaN HEMT 0.034 0.016 0.009
|
Original
|
RF2318
5000MHz
high frequency high power transistor 300mhz bjt n
RF2318
|
PDF
|
2N2484
Abstract: NF marking TRANSISTOR transistor NF marking code Transistor 2N2484 CW-60
Text: 2N2484 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C
|
Original
|
2N2484
140kHz
140kHz
x10-6
30-May
10kHz
100Hz,
200Hz
NF marking TRANSISTOR
transistor NF marking code
Transistor 2N2484
CW-60
|
PDF
|
S07T_2N3117
Abstract: 2n3117
Text: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C
|
Original
|
2N3117
2N3117
150mA,
30MHz
10kHz
S07T_2N3117
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PN2484 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C
|
Original
|
PN2484
PN2484
x10-6
30-May
10kHz
100Hz,
200Hz
10kHz,
|
PDF
|
d4242
Abstract: EL2090 EL2090CM EL2090CN H1210
Text: T T DUC PRO LACEMEN at E T E r P L e t E O OBS ENDED R port Cen /tsc p m u o M S .c M ECO echnical w.intersil T NO RData w r w Sheet August 1995, Rev. A u ct o L or conta -INTERSI 1-888 EL2090 FN7040 100MHz DC-Restored Video Amplifier Features The EL2090 is the first complete DCrestored monolithic video amplifier
|
Original
|
EL2090
FN7040
100MHz
EL2090
d4242
EL2090CM
EL2090CN
H1210
|
PDF
|
MRF466
Abstract: MRF-466
Text: MRF466 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 B • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W PEP
|
Original
|
MRF466
MRF466
30MHz.
MRF-466
|
PDF
|
676.160
Abstract: x-band microwave fet x-band power amplifier
Text: Product Data Sheet 8 - 10.5 GHz Power Amplifier TGA8286-EPU Key Features and Performance • • • • • • 8 to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the
|
Original
|
TGA8286-EPU
TGA8286-EPU
effectivel00pF
676.160
x-band microwave fet
x-band power amplifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JAN 7 1993 BURR-BROW N VCA610 W IDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • WIDE GAIN CONTROL RANGE: 80dB • ULTRASOUND • • • • • AGC AMPLIFIER • ANALYTICAL INSTRUMENTATION SM ALL PACKAGE: 8-pin SO IC or DIP WIDE BANDWIDTH: 30MHz
|
OCR Scan
|
VCA610
30MHz
300dB/
VCA610
|
PDF
|
Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N VCA610 WIDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • WIDE GAIN CONTROL RANGE: 80dB • ULTRASOUND • SMALL PACKAGE: 8-pin SOIC or DIP • AGC AMPLIFIER • WIDE BANDWIDTH: 30MHz • LOW VOLTAGE NOISE: 2.2nV/VHz • ANALYTICAL INSTRUMENTATION
|
OCR Scan
|
VCA610
30MHz
300dB/jiS
VCA610
control16
5M-1982.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OCT ? 5 1992 UCA 11QH M M W I HARRIS SEMICONDUCTOR # # # Output Clamping, Ultra High-Speed Current Feedback Amplifier September ,9 9 2 Features Description • User Programmable Output Voltage Clamp The HFA1130 is a high speed wideband current feedback amplifier
|
OCR Scan
|
HFA1130
30MHz)
-56dBc
850MHz
1-800-4-HARRIS
|
PDF
|
|
|
x-band power amplifier
Abstract: No abstract text available
Text: TGA8286-EPU 8- TO 10.5-GHz AMPLIFIER AP PR O VAL 5150 Two Stage 5-W HFET Power Amplifier 35% P.A.E. at 2- to 3-dB Gain Compression 16-dB Small Signal Gain Gate and Drain Bias can be Applied From Either the Upper or Lower Edges of the Amplifier Size: 5,384 X 2,997 X 0,1016 mm
|
OCR Scan
|
TGA8286-EPU
16-dB
TGA8286-EPU
x-band power amplifier
|
PDF
|
OPA2686
Abstract: No abstract text available
Text: B U R R -B RO W N OPA2686 Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER ííiíS ' FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 1.6GHz • LOW NOISE, DIFFERENTIAL AMPLIFIERS • LOW INPUT VOLTAGE NOISE: 1.4nV/VHz • xDSL RECEIVER AMPLIFIER
|
OCR Scan
|
OPA2686
-90dBc
12mA/chan.
OPA2686
ZZ182
|
PDF
|
BUF601
Abstract: BUF600
Text: B U R R - B R O W N <i [ BUF600 BUF601 ] HIGH-SPEED BUFFER AMPLIFIER APPLICATIONS FEATURES • OPEN-LOOP BUFFER VIDEO BUFFER/LINE DRIVER • HIGH-SLEW RATE: 3600V/|is, 5.0Vp-p INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT • BANDWIDTH: 320MHz, 5.0Vp-p
|
OCR Scan
|
BUF600
BUF601
320MHz,
900MHz,
300MHz
17313b5
BUF601
BUF600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at W B-548-6132 USA Only VCA610 n m r WIDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • • • • • • • ULTRASOUND • AGC AMPLIFIER • ANALYTICAL INSTRUMENTATION WIDE GAIN CONTROL RANGE: 80dB SMALL PACKAGE: 8-pin SOIC or DIP
|
OCR Scan
|
VCA610
30MHz
300dB/
VCA610
|
PDF
|
OPA2686
Abstract: KT352
Text: B U R R -B RO W N OPA2686 Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER a s s e s s - FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 1.6GHz • LOW NOISE, DIFFERENTIAL AMPLIFIERS • LOW INPUT VOLTAGE NOISE: 1.4nV/VHz • xDSL RECEIVER AMPLIFIER
|
OCR Scan
|
OPA2686
-90dBc
12mA/chan.
OPA2686
12mA/channel
OPA2686)
KT352
|
PDF
|
HOS-050C
Abstract: LH0032
Text: H A -2542 HARRIS W ideband, High Slew Rate, High Output Current Operational Amplifier August 1991 Features A pplications • Stable at Gains of 2 or Greater • Pulse and Video Amplifiers • Gain B an d w id th . 70MHz
|
OCR Scan
|
70MHz
100mA
HA-2542
100ns/D
HOS-050C
LH0032
|
PDF
|
OPA2681
Abstract: No abstract text available
Text: B U R R -B R O W N OPA2681 Dual Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable S ita s i? s s - FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G : +2 • UNITY GAIN STABLE: 280MHz (G = 1) • xDSL LINE DRIVER • MATCHED I/O CHANNEL AMPLIFIER
|
OCR Scan
|
OPA2681
225MHz
280MHz
150mA
100V/jis
25ns/100ns
OPA2681
17313LS
ZZ182
|
PDF
|
Untitled
Abstract: No abstract text available
Text: W M GE C PLESSEY jm ADVANCE INFORMATION U IH H IM IIIM B IIIl DS3630 - 11 SL610, SL611 &SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and 50 times respectively and the upper frequency response
|
OCR Scan
|
DS3630
SL610,
SL611
SL612
SL610C,
SL611C
SL612C
15MHz
120MHz
SL610/611
|
PDF
|
LTC1225
Abstract: No abstract text available
Text: r r i r n w TECHNOLOGY _ LT1225 Very High Speed Operational Amplifier K R T U IK S D C SC R IP TIO Í1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1225 is a very high speed operational amplifier with excellent DC performance. The LT1225 features reduced
|
OCR Scan
|
LT1225
150MHz
LT1225
LTC1225
|
PDF
|
STM-0028
Abstract: tDa 8221 DIODE marking 7BA TDA6120Q SOT110 DBS13P SS-00259 TDA6120 PEAK tray drawing sot193
Text: SONY M nu$=t * 1. Type No. / Manufacturer’s Name TDA6120 2. Structure Series / / }& PHILIPS SEMICONDUCTORS ifii MIXED BIP / 3. Use —1 DMOS Function ffliÉ • W M 30MHz / 125Vpp Video Output Amplifier 4. Package / Materials DBS 13P / Plastic 4.1 Dimensions
|
OCR Scan
|
TDA6120
30MHz
125Vpp
SS-00259-t.
J2N81
STM-0028
tDa 8221
DIODE marking 7BA
TDA6120Q
SOT110
DBS13P
SS-00259
PEAK tray drawing
sot193
|
PDF
|
