SMD SOT23 transistor MARK Y1
Abstract: TL431 smd marking smd transistor marking d10 smd transistor marking D9 X10 smd fuses MARKING SMD PNP TRANSISTOR R 1206 Zener diode smd marking c6 zener DIODE smd color marking smd transistor marking r14 NF marking TRANSISTOR SMD c4
Text: TND320/D Rev. 0, Feb-07 40 W Printer Power Supply Reference Design Documentation 1 2007 ON Semiconductor. Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this
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TND320/D
Feb-07
D8278:
SMD SOT23 transistor MARK Y1
TL431 smd marking
smd transistor marking d10
smd transistor marking D9
X10 smd fuses
MARKING SMD PNP TRANSISTOR R 1206
Zener diode smd marking c6
zener DIODE smd color marking
smd transistor marking r14
NF marking TRANSISTOR SMD c4
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PS224
Abstract: ic PS224 optocoupler atx power supply schematic ferrite transformer power for power supply atx PS224 ic datasheet EROS2CHF ferrite transformer atx power supply 24v active clamp forward converter ATX 2005 schematic diagram power supply ATX12v SCHEMATICS
Text: TND313/D Rev 2, May-07 High-Efficiency 305 W ATX Reference Design Documentation Package 2007 ON Semiconductor. 1 Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package.
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TND313/D
May-07
PS224
ic PS224
optocoupler atx power supply schematic
ferrite transformer power for power supply atx
PS224 ic datasheet
EROS2CHF
ferrite transformer atx power supply
24v active clamp forward converter
ATX 2005 schematic diagram
power supply ATX12v SCHEMATICS
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FUSE SH22,5A
Abstract: CPOL-EUE2-5 atx power supply schematic dc 600 watts C-EUC1206 600 watt smps schematic tv lcd Schematic Power Supply smd zener diode color code 1 1uF CPOL-EUE2.5-6 C10 TDC 210-4A C-EU075-032X103
Text: TND316/D Rev. 3, March-07 220 W LCD TV Power Supply Reference Design Featuring NCP1396 and NCP1605 Documentation 1 2007 ON Semiconductor. Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this
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TND316/D
March-07
NCP1396
NCP1605
FUSE SH22,5A
CPOL-EUE2-5
atx power supply schematic dc 600 watts
C-EUC1206
600 watt smps schematic
tv lcd Schematic Power Supply
smd zener diode color code
1 1uF CPOL-EUE2.5-6 C10
TDC 210-4A
C-EU075-032X103
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BFR31
Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Text: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd
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BFR30LT1
BFR31LT1
BFR30LT1
BFR31LT1
OT-23
O-236AB)
2N545>
BFR30
BFR31
BFR30
BFR31
2N5457
M2 MARKING SOT23
JFET 2N5457
lp "sot23 marking motorola"
marking M2 JFET
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Untitled
Abstract: No abstract text available
Text: M AXIM UM RATINGS Symbol Value Unit Co ntinuo us R everse Voltage Rating VR 70 Vdc Peak Forw ard Current 'f 100 m Adc Symbol Max Unit Pd 225 mW 1.8 m W 'X r «j a 556 cc w pd 300 mW 2.4 m W ;C r «j a 417 cw Tj- Tstq - 5 5 to +150 C BAL99LT1* CASE 318-07, STYLE 18
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BAL99LT1*
OT-23
O-236AB)
150JC)
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transistor 2N5457
Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
Text: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10
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OCR Scan
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MMBF5459LT1*
OT-23
O-236AB)
2N5457
MMBF5459LT1
transistor 2N5457
jfet transistor
N-Channel JFET transistor
transistor jfet 2N5457
JFET 2N5457
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Untitled
Abstract: No abstract text available
Text: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value VDG 25 Unit V v GS(rl - 25 V Symbol Max Unit PD 225 mW 1.8 m W /T Röja 556 °C/W TJ« Tstfl - 55 to +150 X G aie V THERMAL CHARACTERISTICS
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MMBFJ177LT1*
OT-23
O-236AB)
MMBFJ175LT1
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MMBF4856LT1
Abstract: MMBF4856
Text: MMBF4856LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V VGS<R> -2 5 V Symbol Max Unit Pd 225 mW 1.8 m W /T R»j a 556 °c/w TJ. Tstq - 55 to +150 °C 3 1v 2 THERMAL CHARACTERISTICS
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MMBF4856LT1*
OT-23
O-236AB)
MMBF4856LT1
MPF4391
MMBF4856LT1
MMBF4856
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bfj310
Abstract: marking HO SOT23
Text: MMBF1309LT1* MMBFJ310LT1* MAXIMUM RATINGS CASE 318-07, STYLE 10 SOT-23 TO-236AB Symbol Value Unit D rain-S ource Voltage Vds 25 Vdc G ate-Source Voltage Vg s 25 Vdc 'G 10 m A dc Symbol Max Unit Pd 225 mW 1.8 m w rc Fl «JA 556 °C/W TJ ’ Tsta - 55 to + 15 0
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MMBF1309LT1*
MMBFJ310LT1*
OT-23
O-236AB)
MMBFJ309LT1
MMBFJ310LT1
OT-23
bfj310
marking HO SOT23
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BAL99LT1
Abstract: No abstract text available
Text: M A XIM U M RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R«j a 556 °C/W PO 300 mW 2.4 mW/°C 9JA 417 °C/W - 5 5 to +150 °C Continuous Reverse Voltage Peak Forward Current BAL99LT1* CASE 318-07, STYLE 18 SOT-23 TO-236AB
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BAL99LT1*
OT-23
O-236AB)
BAL99LT1
BAL99LT1
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JSs sot23
Abstract: BFJ17
Text: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating D rain-G ate V oltag e Reverse Gate-Source V oltage Symbol Value vdg 25 V VGS(r) -2 5 V Symbol M ax Unit Pd 225 mW 1.8 m W rz fy JA 556 °c/w T j' Tstg - 55 to + 150 °c ,-Æ)
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MMBFJ177LT1*
OT-23
O-236AB)
BFJ175LT
JSs sot23
BFJ17
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODE MMBV3401LT1* . designed primarily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um
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MMBV3401LT1*
OT-23
O-236AB)
MMBV3401LT1
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MBFJ310
Abstract: No abstract text available
Text: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W
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MMBFJ309LT1*
MMBFJ310LT1*
MMBFJ309LT1
MMBFJ310LT1
OT-23
O-236AB)
OT-23
MBFJ309
MBFJ310
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01 tcc
Abstract: V209
Text: MMBV109LT1* MV209* SILICON EPICAP DIODES . . . designed for general frequency control and tuning applications; provid ing solid-state re lia bility in replacem ent o f mechanical tuning methods. CASE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies
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MMBV109LT1*
MV209*
OT-23
O-236AB)
MMBV109LT1
O-226AC)
BV109LT1
01 tcc
V209
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Untitled
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV3102LT1 . . designed in the Surface M ount package fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. CA SE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies
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MMBV3102LT1
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq
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BSS123LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MMBF5486LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit Vd g 25 Vdc VGS r 25 Vdc 'Gif) 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc fi #j a 556 °C/W Tj< T stg - 5 5 to +150 °C CASE 318-07, STYLE 10
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MMBF5486LT1*
OT-23
O-236AB)
2N5484
MMBF5486LT1
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transistor 2N5457
Abstract: transistor 6D sot23 MMBF5457LT1
Text: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10
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OCR Scan
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MMBF5457LT1*
OT-23
O-236AB)
MMBF5457LT1
2N5457
transistor 2N5457
transistor 6D sot23
MMBF5457LT1
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Substrate alumina
Abstract: No abstract text available
Text: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12
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BAW56LT1*
OT-23
O-236AB)
BAW56LT1
Substrate alumina
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Rating Symbol Value Unit VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage v EBO 5.0 V 'c 500 mAdc BC817-16LT1 BC817-25LT1 BC817-40LT1 Symbol Max Unit CASE 318-07, STYLE 6 SOT-23 TO-236AB Pd 225 mW 1.8 m W /X R»j a 556
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BC817-16LT1
BC817-25LT1
BC817-40LT1
OT-23
O-236AB)
OT-23
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SSs sot23
Abstract: No abstract text available
Text: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS
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OCR Scan
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MMBFJ175LT1*
OT-23
O-236AB)
MMBFJ175LT1
SSs sot23
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Untitled
Abstract: No abstract text available
Text: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C
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MMBF5460LT1*
MMBF5460LT1
OT-23
O-236AB)
2N5460
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MMBF4856LT1
Abstract: 5BFL
Text: MMBF4856LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X I M U M R A T IN G S Rating D ra in-G a te V o lta g e R e ve rse G a te -S o u rce V olta g e Symbol Value Unit V DG 25 V v g s ir ) -2 5 V Symbol Max U n it Fd 225 mW 1.8 m W /T r 0 JA 556 °C/W
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OCR Scan
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MMBF4856LT1*
OT-23
O-236AB)
BF4856LT1
MPF4391
MMBF4856LT1
5BFL
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS
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OCR Scan
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MMBFJ175LT1*
OT-23
O-236AB)
MMBFJ175LT1
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PDF
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