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Abstract: No abstract text available
Text: VTP Process Photodiodes VTP3410LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).
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VTP3410LAH
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VTP3410LAH
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP3410LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).
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VTP3410LAH
VTP3410LAH
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VTP3410LA
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).
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VTP3410LA
VTP3410LA
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).
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VTP3410LA
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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Untitled
Abstract: No abstract text available
Text: VTP3410LA VTP Process Photodiodes PACKA G E DIM ENSIONS inch mm .0 2 3 (0 .5 8 ) .037 ( 0 .9 4 ) NOM. .160 ( 4 .0 6 ) .1 4 0 ( 3 .5 6 ) .017 ( 0 .4 3 ) .0 2 6 .020 ( 1 .2 7 ) (0 .6 6 ) (0 .5 1 ) (2 .5 4 ) £LV t .025 (0 .6 4 ) .040 (1 .0 0 ) - -0 5 0 '( 1 . 2 7 )
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VTP3410LA
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