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    Excelitas Technologies Corporation VTP3310LAH

    Diode, Photo, 925Nm, 20°, T-1; No. Of Pins:2Pins; Diode Case Style:T-1 (3Mm); Wavelength Of Peak Sensitivity:925Nm; Angle Of Half Sensitivity ±:20°; Dark Current:0.035Μa; Operating Temperature Min:-40°C; Product Range:-; Msl:- Rohs Compliant: Yes |Excelitas Tech VTP3310LAH
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    RS VTP3310LAH Bulk 2 1
    • 1 $1.59
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    VTP3310LA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP3310LA PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP3310LA EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP3310LA PerkinElmer Optoelectronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SILICON PHOTODIODES Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP3310LAH

    VTP3310L

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP3310LA VTP3310L

    VTP3310LAH

    Abstract: VTP3310L
    Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP3310LAH VTP3310LAH VTP3310L

    VTP3310LA

    Abstract: VTP3310L
    Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


    Original     		PDF VTP3310LA VTP3310LA VTP3310L

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original     		PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    VTS3082

    Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
    Text: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level


    Original     		PDF 2850K VTS3082 15K/1 VTS3085 2K/55K VTS3082 476 20k cap VTL5C3 980-2675 VTP1188S 980-0004 photoconductive cells VT935G vactrol

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    VTP3310LA

    Abstract: VTP331OLA VTP3310L
    Text: VTP Process Photodiodes VTP3310LA PACKAGE DIMENSIONS inch mm .0 3 7 (0 .9 4 ) .023 ÌO.Sfiì NOM. .1 6 0 (4 .0 6 ) .0 2 0 (0 .5 1 ) .2 0 5 (5 .2 1 ) M IN IM U M PRODUCT DESCRIPTION CASE 50A LO NGT-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) Small area planar silicon photodiode in


    OCR Scan     		PDF VTP331OLA VTP3310LA VTP3310LA VTP331OLA VTP3310L