Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and
|
Original
|
PDF
|
VTP100CH
|
VTP100C
Abstract: VTP-100C
Text: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and
|
Original
|
PDF
|
VTP100C
VTP100C
VTP-100C
|
Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and
|
Original
|
PDF
|
VTP100C
|
VTP100CH
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and
|
Original
|
PDF
|
VTP100CH
VTP100CH
|
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
|
Original
|
PDF
|
10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
|
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
|
Original
|
PDF
|
90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
|
VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
|
Original
|
PDF
|
VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
|
VTP-100A
Abstract: VTP-100B VTP-100C
Text: VTP-100 Series AC/DC Metal Enclosed A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 1 0 0 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .105º C OUTPUT CAPACITOR .INTERNATIONAL AC INPUT RANGE .HIGH EFFICIENCY, LOW WORKING TEMPERATURE .SOFT-START CIRCUIT, LIMITING AC SURGE CURRENT
|
Original
|
PDF
|
VTP-100
VTP-100A
VTP-100B
VTP-100D
VTP-100C
20MHz
VTP-100A
VTP-100B
VTP-100C
|
ID12
Abstract: VTP100C
Text: VTP100C VTP Process Photodiodes i P A C K A G E DIMENSIONS inch mm catho de; 1 .0 0 ( 2 5 . 4 ) m ark 4 5 ° X .0 3 5 ( 0 .8 9 ) .2 3 0 < 5 .8 4 ) SENSITIVE .2 1 0 ( 5 . 3 3 ) SURFACE _ i ANODE .2 8 5 (7 .2 4 ) •020 s ■105 ( 2 . 6 7 ) .2 6 5 (6 .7 3 )
|
OCR Scan
|
PDF
|
VTP100C
in217
Ctol00Â
1Q90D
3030bm
ID12
VTP100C
|
Untitled
Abstract: No abstract text available
Text: VTP100C VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm c a th o d e : m a r k 1.00 (25.4) 4 5 ° X .035 (0.8 9 ) .230 (5.84) SENSITIVE .210 (5.33) Ì SURFACE + _ ANODE .285 (7.24) c •105 (2.6 7 ) ( 0 .5 1 ) " .095 (2.4 1 ) ■0 2 0 .265 (6.73)
|
OCR Scan
|
PDF
|
VTP100C
|
