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    Excelitas Technologies Corporation VTB6061UVJH

    SENSOR PHOTODIODE 920NM TO233AA
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    VTB6061UVJ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB6061UVJ PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB6061UVJ EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6061UVJ EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6061UVJ EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB6061UVJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original
    PDF VTB6061UVJH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original
    PDF VTB6061UVJ

    VTB6061UVJH

    Abstract: D92-02 uv led 365
    Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original
    PDF VTB6061UVJH VTB6061UVJH D92-02 uv led 365

    D92-02

    Abstract: d9202 uv led 365 VTB6061UVJ
    Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original
    PDF VTB6061UVJ D92-02 d9202 uv led 365 VTB6061UVJ

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original
    PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


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    PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 16A Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt


    OCR Scan
    PDF VTB6061UVJ D001571

    UV diode 365 nm

    Abstract: UV led 200 nm peak uv led 365 VTB6061UVJ
    Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C ASE IS A Large area planar silicon photodiode in a three lead TO -8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt


    OCR Scan
    PDF VTB6061UVJ 10UIS, UV diode 365 nm UV led 200 nm peak uv led 365 VTB6061UVJ

    VTB6060UVJ

    Abstract: VTB6061UVJ
    Text: SbE D BGaGbDT DDOIDHT Tflb I VCT VTB6060UVJ, 1UVJ VTB Process Photodiodes E G & G V AC TE C T -4 1 -5 1 PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated


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    PDF VTB6060UVJ, T-41-51 CASE15A 6x1012 x1013 VTB6060UVJ VTB6061UVJ

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


    OCR Scan
    PDF 365nm, at220nm. VTS2011 VTS20â TB505

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


    OCR Scan
    PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B