BAR80
Abstract: VSO05553
Text: BAR80 Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage
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PDF
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BAR80
VSO05553
Aug-17-2001
100MHz
EHD07010
EHD07009
BAR80
VSO05553
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VSO05553
Abstract: marking BAr
Text: BAR 81 Silicon RF Switching Diodes 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
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Original
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PDF
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VSO05553
Oct-05-1999
VSO05553
marking BAr
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VSO05553
Abstract: No abstract text available
Text: BAR 80 Silicon RF Switching Diode 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
|
Original
|
PDF
|
VSO05553
Oct-05-1999
100MHz
EHD07010
EHD07009
VSO05553
|
marking BBs
Abstract: BAR81 VSO05553
Text: BAR81 Silicon RF Switching Diodes 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAR81
VSO05553
Aug-21-2001
marking BBs
BAR81
VSO05553
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