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    A2N transistor

    Abstract: No abstract text available
    Text: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process


    OCR Scan     		PDF R502331 00DQ27R VSC1500 100K/10KH VSC1500 VSC1500TC) VSC1500TC, A2N transistor

    ring oscillator

    Abstract: VSC1500TC dc to ac Inverter evaluation board Semiconductor ring structure
    Text: VITESSE SEMICONDUCTOR 30E J> • =1502331 GüüGaôô h « V T S VSC1500TC High Speed GaAs 1500 Gate Structured Cell Array Test Chip Introduction The VSC1500TC is a test chip personaliza­ tion of the VSC1500 high speed GaAs Gate Array. This chip is packaged in a ceramic 52


    OCR Scan     		PDF VSC1500TC VSC1500TC VSC1500 VSC1500DUT ring oscillator dc to ac Inverter evaluation board Semiconductor ring structure

    A2N transistor

    Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
    Text: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):


    OCR Scan     		PDF VSC1500/VSC1520 100K/10KH A2N transistor FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16

    Untitled

    Abstract: No abstract text available
    Text: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


    OCR Scan     		PDF 100K/10KH

    Untitled

    Abstract: No abstract text available
    Text: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


    OCR Scan     		PDF VSC1520 VSC1500DUT VS15E0Ã