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    Tamura Corporation of America OVS-12G-UC

    AC/DC CONVERTER 12V 96W
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    Vishay Semiconductors VTVS12GSMF-M3-08

    TVS DIODE 12.4VWM 20.1V DO219AB
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    Vishay Semiconductors VTVS12GSMF-M3-18

    TVS DIODE 12.4VWM 20.1V DO219AB
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    VS12G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VS12G424FC Vitesse Semiconductor Gallium Arsenide 256 x 4 Static RAM Scan PDF

    VS12G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VS12G476 Registered I/O, Self-Timed, 1Kx 4 Static RAM Features • 1024 by 4-bit static RAM for cache or control store applications • Very fast Read/Write cycle time 2.5 ns • Single power supply 2 Volts • Completely static operation • Very low sensitivity to total


    OCR Scan     		VS12G476 28-pin VS12G476 PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VS12G422T 256 x 4 Static RAM FEATURES • 25 6 w ords by 4-bit static R AM for cache and control store applications FUNCTIONAL DESCRIPTION The Vitesse VS12G422T is a very high speed, fully decoded 1024-bit read write static random access memory organized as 256 words by


    OCR Scan     		22-pin VS12G422T VS12G422T 1024-bit V512G422T PDF

    256x4 static ram

    Abstract: ram 256 256x4 O2-A2 a7dq 8a5c
    Text: P R E L IM IN A R Y VITESSE VS12G424 Gallium Arsenide 256 x 4 Static RAM SEMICONDUCTOR CORPORATION Distinctive Features • 256 x 4 static RAM for cache and control store applications • Write pulse internally generated from clock edge • Registered address, control and data inputs


    OCR Scan     		VS12G424 VS12G424 28-pin 256x4 static ram ram 256 256x4 O2-A2 a7dq 8a5c PDF

    CT scan circuit

    Abstract: No abstract text available
    Text: VS12G478 VITESSE 2 K x 2 Self-Timed RAM with Purge FEATURES • 2048 words x 2-bit Static RAM, ideal for fast cache or control store applications • Functionally compatible with national N M 100492 with the addition of an output latch enable • Very fast: read/write cycle time 5, 6 or 7 ns


    OCR Scan     		28-pin VS12G478 VS12G478 4096-bit VS12G478-5 VS12G478-7 CT scan circuit PDF

    un1211

    Abstract: No abstract text available
    Text: VITESSE S E M I CONDU CT OR 03* • D A T A S H E E T VS12G422T Gallium Arsenide 256 x 4 Static RAM SEMICONDUCTOR CORPORATION Distinctive Features • • Com m ercial and military tem perature ra n g e . 2 5 6 words by 4-bit static R A M for caché and control store


    OCR Scan     		VS12G422T 22-pin 28-pin 024-bit un1211 PDF

    Untitled

    Abstract: No abstract text available
    Text: VI T E SS E S E M I C O N D U C T O R 30E D TSGE331 D0ÜG35G 7 VS12G476 w Registered I/O, Self-Timed, 1Kx 4 Static RAM IS> o -j o> Features • 1024 by 4-bit static RAM for cache or control store applications »Very fast Read/Write cycle tim e >Single power supply 2 Volts


    OCR Scan     		TSGE331 VS12G476 28-pin VS12G476 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY VS12G476 VITESSE 2.5 ns, Registered I/O, Self-Timed 1 K x 4 Static RAM ; SEMICONDUCTOR c o r p o r a t io n Features • 1024 x 4-Bit Static RAM for Cache or Control Store Applications • Very Fast Read/Write Cycle Time . • 'Native' GaAs Compatible Inputs and Outputs for


    OCR Scan     		VS12G476 28-pin VS12G476 PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VS12G 422T 256 x 4 Static RAM FUNCTIONAL DESCRIPTION FEATURES • 256 words by 4-bit static RAM for cache and control store applications • Very fast: Choice of 4, 5, and 6 ns maximum address access times • TTL compatible inputs and outputs • Single +5.0 Volt power supply


    OCR Scan     		VS12G 22-pin VS12G422T 1024-bit PDF

    Llano

    Abstract: No abstract text available
    Text: V I T E S S E SEMICONDUCTOR 0 1 -^-v r* 'J' r’ ~* 9502331 Ü l = 1 5 0 5 3 3 1 O D Q D m i 3 I If • ^ ~ i '^ * M f f '~1r~f*<-ftT ^-iW i«'v 'i'* ••->*■»- '-^~~'f r y *1 V IT E S S E 01E S E M IC O N D U C T O R T -4 6 -2 3 -0 8 00149 VS12G422E


    OCR Scan     		VS12G422E 24-pin 28-pin June1988 Llano PDF

    UU32

    Abstract: D1718
    Text: P R E L IM IN A R Y VS12G424 VITESSE Gallium Arsenide 256 x 4 Static RAM SEMICONDUCTOR CORPORATION Distinctive Features • 256 x 4 static RAM for cache and control store applications • Write pulse internally generated from clock edge • Registered address, control and data inputs


    OCR Scan     		VS12G424 VS12G424 28-pin UU32 D1718 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops


    OCR Scan     		VSC10000 100K/10K/10KH 10K/10KH PDF

    G52020-0

    Abstract: VSC10000
    Text: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)


    OCR Scan     		VSC10000 100K/10K/10KH 10K/1 G52020-0 VSC10000 PDF

    Untitled

    Abstract: No abstract text available
    Text: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE V S 12G 478 2 K x 2 Self-Timed RAM with Purge FEATURES • 2048 words x 2-bit Static RAM, ideal for fast cache or control store applications • Functionally compatible with national NM100492 with the addition of an output latch enable • Very fast: read/write cycle time 5, 6 or 7 ns


    OCR Scan     		NM100492 28-pin VS12G478 4096-bit VS12G478-5 VS12G478-7 PDF