V40100K
Abstract: No abstract text available
Text: V40100K www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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V40100K
O-220AB
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V40100K
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V40100K
Abstract: No abstract text available
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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V40100K
O-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
V40100K
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BRIDGE-RECTIFIER
Abstract: 2 Amp rectifier diode DC IR Bridge Rectifier BRIDGE RECTIFIER full wave bridge rectifier CBRHD-01 bridge rectifier 40 amp 120mm2
Text: Central CBRHD-01 TM Semiconductor Corp. HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.
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CBRHD-01
42mm2
120mm2
E130224
CBRHD-01
CBRHD-01:
400mA
11-February
CBRHD01:
BRIDGE-RECTIFIER
2 Amp rectifier diode
DC IR Bridge Rectifier
BRIDGE RECTIFIER
full wave bridge rectifier
bridge rectifier 40 amp
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CBD6
Abstract: cbd4 CBD10 2 Amp rectifier diode diode marking codes on semiconductor CBRHD02 CBRHD-02 CBRHD04 CBRHD-04 CBRHD06
Text: Central CBRHD SERIES TM Semiconductor Corp. HIGH DENSITY ½ AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.
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42mm2
120mm2
E130224
CBRHD-02:
CBRHD-06:
400mA
26-September
CBRHD02:
CBRHD04:
CBRHD06:
CBD6
cbd4
CBD10
2 Amp rectifier diode
diode marking codes on semiconductor
CBRHD02
CBRHD-02
CBRHD04
CBRHD-04
CBRHD06
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V40100K
Abstract: No abstract text available
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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V40100K
O-220AB
18-Jul-08
V40100K
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V40100K
Abstract: No abstract text available
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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Original
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PDF
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V40100K
O-220AB
22-B106
2002/95/EC
2002/96/EC
O-220AB
11-Mar-11
V40100K
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V40100K
Abstract: No abstract text available
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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PDF
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V40100K
O-220AB
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
V40100K
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J-STD-002
Abstract: V40100K
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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PDF
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V40100K
O-220AB
22-B106
2002/95/EC
2002/96/EC
18-Jul-08
J-STD-002
V40100K
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V40100K
Abstract: No abstract text available
Text: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency
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Original
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PDF
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V40100K
O-220AB
22-B106
2002/95/EC
2002/96/EC
O-220AB
2011/65/EU
2002/95/EC.
2011/65/EU.
V40100K
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C-030
Abstract: MMBFJ110
Text: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted
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MMBFJ110
C-030
MMBFJ110
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Untitled
Abstract: No abstract text available
Text: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted
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MMBFJ110
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J108
Abstract: MMBFJ108
Text: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted
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J109
Abstract: No abstract text available
Text: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted
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Untitled
Abstract: No abstract text available
Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC
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MMBD1201
OT-23
MMBD1202
MMBD1203
MMBD1204
MMBD1205
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Untitled
Abstract: No abstract text available
Text: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking
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BSR18A
OT-23
OT-23
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1403A
Abstract: DIODE A34 1404a transistor 1403A MMBD1401A MMBD1403A MMBD1404A MMBD1405A FAIRCHILD DIODE
Text: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2NC 2 1 1 2 1404A 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
1403A
DIODE A34
1404a
transistor 1403A
FAIRCHILD DIODE
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Untitled
Abstract: No abstract text available
Text: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method
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BCW68G
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
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Untitled
Abstract: No abstract text available
Text: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage
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4148SE
4148CC
MMBD4148CA
MMBD4148
MMBD4148CC
MMBD4148SE
OT-23
4148CA
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4148CA
Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Text: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage
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4148SE
4148CC
MMBD4148CA
MMBD4148
MMBD4148CC
MMBD4148SE
OT-23
4148CA
4148CA
4148SE
MMBD4148
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0043 hd
Abstract: No abstract text available
Text: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V2 AMP DUAL IN LINE BRIDGE RECTIFIER HD FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.
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42mm2
120mm2
E130224
CBRHD-02:
26-September
CBRHD02:
CBRHD04:
CBRHD06:
CBRHD10:
CBD10
0043 hd
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R1 marking
Abstract: No abstract text available
Text: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V i AMP DUAL IN LINE BRIDGE RECTIFIER HDBRIDGE FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.
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42mm2
120mm2
E130224
CBRHD-02:
CBRHD-06:
CBRHD-04:
26-September
CBRHD02:
CBRHD04:
CBRHD06:
R1 marking
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP Y' ,v%;* •"VS■.y~ ;•• BSE D EJ 7^707^ OOOÖOfib 2 E3 T -7 4 -0 5 -0 1 CMOS 1C 3020A 2207B 12V-Operat@d Single-Channel Electronic Volum e Control Use . Attenuation of signal Features . CMOS process . Up/down operation is performed with switch input.
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2207B
16-step
QIP48A
00077b3
MFP30
QIP80B
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ci 94vo
Abstract: vqc 10 d MARKING 1F vqc 10 C HERF1601G HERF1608G
Text: Sb HERF1601G - HERF1608G TAIWAN SEMICONDUCTOR tò RoHS Isolated 16.0 A M PS. Glass Passivated High Efficient Rectifiers 1IQ -220AB COMPLIANCE V-'vS. _i*;i i!]_ u>< . imi* ¿¿am .HASS?¥>.%/ iw» r.i F e a tu re s ^ G la s s p s s s iv a te d c h ip ju n ction.
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HERF1601G
HERF1608G
ITQ-220AB
ITO-22OA8
MIL-STD-202,
HERF1608GJ
ci 94vo
vqc 10 d
MARKING 1F
vqc 10 C
HERF1608G
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