Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
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IRG4IBC20KD
25kHz
T0-220
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PDF
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Untitled
Abstract: No abstract text available
Text: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code
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BSM150GB170DN2
E3166
C67070-A2709-A67
E3166
Oct-27-1997
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Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties
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PWWR60CKF6
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PDF
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vqe 24 e
Abstract: vqe 24 d
Text: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL
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Oct-23-1997
vqe 24 e
vqe 24 d
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PDF
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307d
Abstract: vqe 14 E P 307 diode 307d
Text: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code
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O-218
Q67040-A4221-A2
Dec-02-1996
307d
vqe 14 E
P 307
diode 307d
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PDF
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
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00R600KF3
34G3SR7
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PDF
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bup3140
Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code
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O-218AB
Q67040-A4226-A2
l-30-1996
GPT05155
bup3140
BUP 3140
BUP 300
L30 diode 4 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses
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IRGPC50MD2
-10ps
10kHz)
C-405
O-247AC
C-406
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
4ASS452
0G20437
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz
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IRGMH40F
44S54S2
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PDF
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siemens igbt
Abstract: No abstract text available
Text: SIEMENS SGP20N60 P relim inary data IGBT • Latch-up free • Avalanche rated P in i Pin 2 G Ul Type 600V SGP20N60 Pin 3 C E b Package Ordering Code 20A TO-220 AB Q67040-A . . . . Maximum Ratings Symbol Values LU Parameter 600 Collector-emitter voltage Coilector-gate voltage
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SGP20N60
SGP20N60
Q67040-A
O-220
Apr-08-1998
BUP602D
PT05155
siemens igbt
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PDF
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Untitled
Abstract: No abstract text available
Text: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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PC30W
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183
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PDF
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
T0220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies
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MS5SM52
P0S1V22
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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Untitled
Abstract: No abstract text available
Text: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200
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GA100TS60U
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve
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1656B
IRG4PC40W
554S2
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PDF
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12n120
Abstract: TO247AE
Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGW12N
120/D
MGW12N120/D
12n120
TO247AE
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve
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PC50W
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PDF
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Untitled
Abstract: No abstract text available
Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4BC30W
0D2flb53
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PDF
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G4PC30F
Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Text: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r
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IRG4PC30F
O-247AC
O-247AC
G4pc30f,
G4PC30F
G4PC30
g4pc
st igbt driver
bt 13b
S/BIP/SCB345100/B/30/G4PC30F
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG15Q6ES50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG15Q6ES50
961001EAA1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91752 International I R Rectifier IRG4IBC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • 2.5kV, 60s insulation voltage © • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating
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IRG4IBC20UD
T0-220
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PDF
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