OCT9600
Abstract: mobile switching center (msc) Mobile Switch Center MSC
Text: O OC C T 9 6 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Modules Increasing system density while improving voice quality The OCT9600 Series of voice processor modules performs high quality echo cancellation and Voice Quality Enhancements VQE at extremely
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OCT9600
OCT9600pb2000-022
mobile switching center (msc)
Mobile Switch Center MSC
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1N4372A-1
Abstract: 1N4614-1 1N4627-1 1N746A-1 JAN1N4134 1N4099-1 1N4135-1 1N4370A-1
Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-10-019068/Mr. Carpenter/614-692-7078/kc October 7, 2009 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 Mr. Mark McNulla
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VQE-10-019068/Mr.
Carpenter/614-692-7078/kc)
MIL-PRF-19500N,
JAN1N14104
JAN1N4134
1N4372A-1
1N4614-1
1N4627-1
1N746A-1
1N4099-1
1N4135-1
1N4370A-1
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m14 transistor
Abstract: ca3146 AN5296 Application of the CA3018 Integrated an5296 3183a CA3183 CA31B "an5296 Application of the CA3018" ca3083 "Application of the CA3018"
Text: s e m ic o n CA3146, CA3146A, CA3183, CA3183A d y ,e « rt « High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - Vqe Max) • Operation from DC to 120MHz (CA3146, CA3146A)
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
CA3183
CA3146A
CA3146
m14 transistor
AN5296 Application of the CA3018 Integrated
an5296
3183a
CA31B
"an5296 Application of the CA3018"
ca3083
"Application of the CA3018"
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C965 transistor
Abstract: transistor c965 transistor c964
Text: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MK
360Vdc,
C-970
C965 transistor
transistor c965
transistor c964
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Untitled
Abstract: No abstract text available
Text: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC40K
application002Gb43
TQ-220AB
C-854
4A55455
G020b44
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2SA562TM
Abstract: 2SC1959
Text: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA
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2SA562TM
-400mA
2SC1959.
2SA562TM
2SC1959
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2SD2449
Abstract: 2-21F1A 2SB1594 2sb15
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO
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2SD2449
2SB1594
2SD2449
2-21F1A
2SB1594
2sb15
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Untitled
Abstract: No abstract text available
Text: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M
10kHz)
TQ-220AB
5545E
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LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M-S
10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
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c879 transistor
Abstract: No abstract text available
Text: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC30K
2Gb73
O-247AC
2Db74
c879 transistor
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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5842s
Abstract: 5841A
Text: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,
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UCN5841A
UCN5842A
5841/42A
5841/42S
A5841SLW
5842SLW
5842s
5841A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)
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2SD1314
VCC-300V
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cb 10 b 60 kd
Abstract: 2N4126
Text: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4126
-50nA
-50mA,
2N4124
cb 10 b 60 kd
2N4126
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2SA1588
Abstract: 2SC4118 A1588
Text: TOSHIBA 2SA1588 2 S A 1 588 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA
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2SA1588
--400mA
2SC4118
2SA1588
A1588
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Untitled
Abstract: No abstract text available
Text: MG50Q1BS11 TOSHIBA MG 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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MG50Q1BS11
120oltage.
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MG15N2YS1
Abstract: ALY TRANSISTOR transistor ALY
Text: GTR MODULL SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5us(Max.) . Low Saturation Voltage: Vqe ( s a t )= 5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one
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MG15N2YS1
--10V
MG15N2YS1
ALY TRANSISTOR
transistor ALY
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TRANSISTOR C307
Abstract: transistor c308
Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M
10kHz)
C-311
O-22QAB
C-312
0201G2
TRANSISTOR C307
transistor c308
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IRGBC36
Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Text: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00
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IRGBC20
IRGBC26
IRGBC30
IRGBC36
IRGBC40
IRGBC46
IRGPC40
IRGPC46
IRGPC50
IRGPC56
IRGBC36
IRGBC46
THOMSON 58E
02073
IRGPC56
IRGPC
THOMSON DISTRIBUTOR 58e d
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Untitled
Abstract: No abstract text available
Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode
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GT60M104
S5J12
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Untitled
Abstract: No abstract text available
Text: MG50Q1BS11 TOSHIBA M G 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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MG50Q1BS11
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)
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MG25Q1BS11
2-33D1A
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Untitled
Abstract: No abstract text available
Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode
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GT60M104
S5J12
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PS6002
Abstract: "Schmitt Trigger"
Text: N E C ELECTRONICS INC 30E D • L.4E7S25 0025577 1 ■ SEC OPTOELECTRONIC DEVICES r - i I-73 Photo Interrupters cont. Transistor Output Type (cont.) Part Number Characteristics (Ta = 25°C) Outline CTR (%) lF Features VQE PS6001A m p i 100 (¿/A) to Photo Reflective Sensor
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4E7S25
PS6001A
PS6002
PSS001HC
PS5002HC
PS5003HC
PS5001
PS5002HR
PS6002
"Schmitt Trigger"
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