Untitled
Abstract: No abstract text available
Text: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 BUZ 355 N channel Enhancement mode Avalanche-rated Pint Type VDS ID ^DS(on) Package BUZ 355 800V 6A 1.50 TO-218AA Pin 2 Pin 3 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
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diode 1n4007
Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the
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Wh6900000
diode 1n4007
VQB 28 E
vqb 15
0485400000
Diode -1N4007
diode,1N4007
diode 1N4007 terminal
Diode 1N4007 vh
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VQB 24 E
Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Text: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor
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hp 2212
Abstract: 1783550000
Text: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000
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diode 1n4007
Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the
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CT1012
Abstract: Sd80-02 TIC 107
Text: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N
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SD5000,
SD5001,
SD5002
16-Pin
SD5000N
SD5000J
SD5000CHP
SD5001N
SD5001J
CT1012
Sd80-02
TIC 107
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VQB 28 E
Abstract: 1615280000
Text: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r
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6/88RT
VQB 28 E
1615280000
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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LL250
Abstract: No abstract text available
Text: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions
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0520000000End
LL250
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bvoe
Abstract: TSC* 7 VQB 28 E
Text: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ
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SD5400
SD5401
SD5402
107dB@
SD5400.
SD5401
4-250C
bvoe
TSC* 7
VQB 28 E
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D147D
Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC
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C520D
D147D
C520D
vqb 71
VQB71
D347D
d348d
VQE23
D346D
Halbleiterbauelemente DDR
VQE24
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E2512
Abstract: vgb 0503 VGB0504MY7 VBO 24 VGB0492MY7 80380 b1912 E2506 vgb 0491 VGB0493MY7
Text: I X Y S CORP If lE D • 4bflb22b 0QQ07bñ Rectifier Bridges, 1~ i 5 ■ 'T - r s - o c i Typical applications - DC-Power supplies - DC-Supply for electronics and power control systems - Avalanche Types: magnet valves, magnet brakes B 1906 LF B 1912 LF LF
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4bflb22b
0QQ07bñ
E2512
VB010
vgb 0503
VGB0504MY7
VBO 24
VGB0492MY7
80380
b1912
E2506
vgb 0491
VGB0493MY7
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SD224H
Abstract: SOLITRON SD224 XSD224
Text: SOLITRON DEVICES INC bl DE |fl3fc,flfc,0fi OOOIS 41 a D r- 5/rwri N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET FEATURES • Lateral D-MOS Design ■ Low ON Resistance — 1.1 ohms typ ■ Extremely Low Drive Current ■ Bi-Direction APPLICATIONS ■ Broadband, High-Gain, RF Power Amplifiers
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OOD1S41
500mA
60/iSec,
SD224H
SOLITRON
SD224
XSD224
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C583
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS
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200MHz
39MAX
C583
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Untitled
Abstract: No abstract text available
Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP
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14-Pin
SD5100CHP
SD5100N
SD5101CHP
SD5101N
Drivers--SD5100
Drivers--SD5101
SD5100
SO-16)
OT-143)
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soro power
Abstract: 2SC3547A
Text: TOSHIBA 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • + 0.5 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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2SC3547A
100MHz/
soro power
2SC3547A
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3SD21
Abstract: tt 2144 bv ui 302 0220
Text: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION
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O-206AF
CTO-72)
SD210DE
SD210DBR
SD211DE
SD211DE/R
SD211CHP
SD212DE
SD212DE/R
SD212CHP
3SD21
tt 2144
bv ui 302 0220
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TN0106N3
Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
Text: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack
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O-226AÃ
SD1137BD
TN0106N3
TN0110N3
SD1137CHP
TN0106ND
TN0110ND
TN0106
SD1137
TN0110
TN0110N3
TN0110ND
TO226AA
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ME4003
Abstract: 2SC3124 12gw
Text: TOSHIBA 2SC3124 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 24 TV TUNER, VHF OSCILLATOR APPLICATIONS. U n i t in m m + 0 .5 2 .5 -I 1 3 + 0 .2 5 1 .5 - Q .l 5 I1 c5c5 ÈE- +1 -E3 dd +1 oo +l M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC
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2SC3124
SC-59
200s10
50MHz
ME4003
2SC3124
12gw
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2SC3474
Abstract: No abstract text available
Text: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)
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2SC3474
2SC3474
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