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    VNS1NV04DPE Search Results

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    STMicroelectronics VNS1NV04DP-E

    IC PWR DRIVER N-CHANNEL 1:1 8SO
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    DigiKey VNS1NV04DP-E Tube 2,000
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    • 10000 $0.64054
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    Win Source Electronics VNS1NV04DP-E 43,977
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    • 100 $0.905
    • 1000 $0.603
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    STMicroelectronics VNS1NV04DPTR-E

    Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
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    Mouser Electronics VNS1NV04DPTR-E 27,381
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    • 10 $1.28
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    Quest Components VNS1NV04DPTR-E 2,240
    • 1 $1.5845
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    VNS1NV04DPE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VNS1NV04DP-E STMicroelectronics PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 40V 1.7A 8SOIC Original PDF

    VNS1NV04DPE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 RDS(ON) 250m (1) Current limitation (typ) (1) Drain-Source clamp voltage ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation • Thermal shutdown


    Original
    PDF VNS1NV04DP-E VNS1NV04DP-E

    VNS1NV04DP-E

    Abstract: 2010 so-8 VNS1NV04DP vns1nv04dptr-e
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original
    PDF VNS1NV04DP-E VNS1NV04DP-E 2010 so-8 VNS1NV04DP vns1nv04dptr-e

    VNS1NV04DP

    Abstract: VNS1NV04D vns1nv04dpe
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original
    PDF VNS1NV04DP-E 2002/95/EC VNS1NV04DP-E VNS1NV04DP VNS1NV04D vns1nv04dpe

    Untitled

    Abstract: No abstract text available
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original
    PDF VNS1NV04DP-E VNS1NV04DP-E