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    VNDQ1

    Abstract: 1206L VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


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    PDF VN1206L O-226AA 18-Jul-08 VNDQ1 1206L VN1206L

    VN1210M

    Abstract: VN1206M VN1206L
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


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    PDF VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1210M VN1206M VN1206L

    VN1206L

    Abstract: VN1210M VN1206M
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


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    PDF VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1206L VN1210M VN1206M

    1206L

    Abstract: VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original
    PDF VN1206L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 1206L VN1206L

    Untitled

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original
    PDF VN1206L O-226AA 1206L 08-Apr-05

    VN1206L

    Abstract: VN1206M VN1210M
    Text: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V


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    PDF VN1206L/M, VN1210M VN1206M VN1206L O226AA) P-38211--Rev. VN1206L VN1206M VN1210M

    VN1210M

    Abstract: VN1206L VN1206M
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


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    PDF VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1210M VN1206L VN1206M

    VN1206L

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original
    PDF VN1206L O-226AA O-226AA) S-00591--Rev. 03-Apr-99 VN1206L

    VN1206M

    Abstract: No abstract text available
    Text: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE


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    PDF VN1206L VN1206M O-237 VNDQ12 VN1206M

    vn1210m

    Abstract: No abstract text available
    Text: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 VN1206M, VN1210M Single TO-92 TO-226AA VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive


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    PDF VNDQ12 O-237 VN1206M, VN1210M VN1206L, VN1210L, TN1206L O-226AA) VNDQ12

    VN1210L

    Abstract: No abstract text available
    Text: VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors TO -92 TO-226AA B O T T O M VIEW PRODUCT SUMMARY VN1210L 120 VN1210M Q V (BR)DSS (V) la PA R T N UM BER >D (A) PACKAGE 10 0.18 TO-92 120 10 0.20 TO-237 Performance Curves: VNDQ12 2 GATE 3 DRAIN TO-237


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    PDF VN1210 O-226AA) VN1210L VN1210M O-237 VNDQ12 1210L

    Untitled

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF


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    PDF VN1206L 1206L S-04279-- 16-Jul-01 O-226AA)

    VN46AFD

    Abstract: VNDQ1 vnd02 TD1001 VN46AF
    Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)


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    PDF TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P VNDQ03 TD1001Y TQ1001J VN46AFD VNDQ1 vnd02 TD1001 VN46AF

    Untitled

    Abstract: No abstract text available
    Text: T em ic smcons_ VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber : VV BR DSS Min (V) VN1206L VN1206M 120 VN1210M Features Benefits • • • • • • • • • • Low On-Resistance: 3.8 Q


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    PDF VN1206L/M, VN1210M VN1206L VN1206M VN1210M P-38211--Rev.

    3821J

    Abstract: No abstract text available
    Text: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2


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    PDF VN1206L/M, VN1210M 1206L VN1206M VNI21QM P-38211-- 15-Aug-94 O-226AA) 3821J