VQ1001J
Abstract: VQ1001P
Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D
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VQ1001J/P
VQ1001P
VQ1001J
S-04279--Rev.
16-Jul-01
VQ1001J
VQ1001P
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VQ3001J
Abstract: VQ3001P
Text: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications
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VQ3001J/3001P
P-38283--Rev.
15-Aug-94
VQ3001J
VQ3001P
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Untitled
Abstract: No abstract text available
Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
O-226AA)
S-52426--Rev.
14-Apr-97
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Untitled
Abstract: No abstract text available
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
18-Jul-08
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9907
Abstract: 9907 a VQ3001J VQ3001P
Text: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits
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VQ3001J/3001P
P-38283--Rev.
9907
9907 a
VQ3001J
VQ3001P
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0401L
Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Text: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30
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TN0201L/0401L,
VN0300L/LS
TN0201L
TN0401L
VN0300L
VN0300LS
18-Jul-08
0401L
TN0201L
TN0401L
VN0300L
VN0300LS
tn0201l siliconix
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VQ1001J
Abstract: VQ1001P
Text: VQ1001J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications
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VQ1001J/P
VQ1001J
VQ1001P
P-37655--Rev.
VQ1001J
VQ1001P
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TN0201L
Abstract: TN0401L VN0300L VN0300M
Text: TN0201L/0401L, VN0300L/M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
O226AA)
P-37992--Rev.
TN0201L
TN0401L
VN0300L
VN0300M
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VQ3001J
Abstract: VQ3001P 70221
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS
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VQ3001J/P
16-Jul-01
S-04279--Rev.
VQ3001J
VQ3001P
70221
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70221
Abstract: mosfet vq3001p VQ3001J VQ3001P
Text: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications
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VQ3001J/3001P
S-52426--Rev.
14-Apr-97
70221
mosfet vq3001p
VQ3001J
VQ3001P
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0401L
Abstract: VN0300L TN0401L TN0201L VN0300LS
Text: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30
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TN0201L/0401L,
VN0300L/LS
TN0201L
TN0401L
VN0300L
VN0300LS
O-226AA)
S-04279--Rev.
16-Jul-01
0401L
VN0300L
TN0401L
TN0201L
VN0300LS
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VN0300M
Abstract: TN0201L TN0401L VN0300L
Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
O-226AA)
S-52426--Rev.
14-Apr-97
VN0300M
TN0201L
TN0401L
VN0300L
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TN0201L
Abstract: No abstract text available
Text: H IS S A TN0201L, TN0401L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BR|DSS PART NUMBER ro? c BOTTOM VIEW fD (A) TN0201L 20 1.2 0.64 TN0401L 40 1.2 0.64 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ03 u 3 ,i— 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN0201L,
TN0401L
O-226AA)
TN0201L
VNDQ03
100-C
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vn0300
Abstract: VN0300L VNDQ03
Text: VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (B R |D S S VN0300L VN0300M >D " s r (A) PACKAGE 30 1.2 0.64 TO-92 30 1.2 0.67 TO-237 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237 Performance Curves: VNDQ03
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VN0300
O-226AA)
VN0300L
VN0300M
O-237
VNDQ03
VN0300M
VNDQ03
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tq1001j
Abstract: No abstract text available
Text: TQ1001J N-Channel Enhancement-Mode MOS Transistor Arrays_ PRODUCT SUMMARY TOP VIEW 14-PIN PLASTIC V BR DSS •d (V) rX ’ (A) 30 1.2 0.56 D ual-ln-Line Package Performance Curves: VNDQ03 s, [T D ,|T 3 D< G ,[ I ÏÏÏ] G4 13 ] S 4 [7 N /C
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TQ1001J
14-PIN
VNDQ03
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Untitled
Abstract: No abstract text available
Text: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN0300L, TN0201L, TN0401L Single TO-237 • VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP
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VNDQ03
VN0300L,
TN0201L,
TN0401L
VN0300M
VQ1001J
VQ1001P
O-226AA)
O-237
14-Pln
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vn0300m
Abstract: No abstract text available
Text: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B
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VN0300
VN0300B
O-205AD
TQ-205AD
VN0300L
VN0300M
O-237
VNDQ03
O-237
VN0300B.
vn0300m
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Untitled
Abstract: No abstract text available
Text: Tem ic siliC0Dl>_ TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber '' BR DSS M in (V) r DS(on) M ax (£2) y<3S(th) (V) I d (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
P-37992--Rev.
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VQ1001
Abstract: No abstract text available
Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7
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VQ1001
VQ1001J
VQ1001P
14-PIN
VNDQ03
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52426
Abstract: No abstract text available
Text: T em ic VQIOOIJ/P S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V{BR DSS M in V) rDS(on) M a x (Q ) VGS(tht (V ) Id (A) 1 @ VGS- 12 V 0.8 to 2.5 0.83 ] @ VGs = 12 V 0.8 to 2.5 0.53 VQ1001J 30 VQ1001P
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VQ1001J
VQ1001P
S-52426--
14-Apr-97
VQ1001J/P
52426
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B0725
Abstract: No abstract text available
Text: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF
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VQ1001J
VQ1001P
VQ1001J/P
P-37655--Rev.
B0725
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VNDQ1CHP
Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Text: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE
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VN0300
O-226AA)
VN0300L
VN0300M
O-237
VNDQ03
VN0300M
VNDQ1CHP
VNDQ1
VNDQ03
TN0201L
TN0401L
VQ1001J
VQ1001P
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25Q10
Abstract: No abstract text available
Text: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64
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TN0201
L/0401
VN0300L/LS
TN0201L
TN0401L
VN0300L
VN0300LS
S-04279--
16-Jul-01
25Q10
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Untitled
Abstract: No abstract text available
Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features
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VQ3001J/3001P
P-38283--
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