2N6660 JANTX
Abstract: No abstract text available
Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS
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2N6660JAN/JANTX/JANTXV
2N6659/2N6660,
VQ1004J/P
VNDQ06
P-37515--Rev.
04-Jul-94
2N6660 JANTX
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Untitled
Abstract: No abstract text available
Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS
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2N6660JAN/JANTX/JANTXV
2N6659/2N6660,
VQ1004J/P
VNDQ06
P-37515--Rev.
04-Jul-94
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VN0606L
Abstract: VN66AFD TN0601L
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46
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TN0601L,
VN0606L,
VN66AFD
VN0606L
TN0601L
O-226AA
08-Apr-05
VN0606L
VN66AFD
TN0601L
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VN66AFD
Abstract: TN0601L VN0606L VN0606M
Text: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2
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TN0601L,
VN0606L/M,
VN66AFD
VN0606L
TN0601L
VN0606M
O-226AA,
O-237)
S-52426--Rev.
VN66AFD
TN0601L
VN0606L
VN0606M
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vn66afd
Abstract: 0606L TN0601L VN0606L
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46
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TN0601L,
VN0606L,
VN66AFD
VN0606L
TN0601L
O-226AA
18-Jul-08
vn66afd
0606L
TN0601L
VN0606L
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VN66AFD
Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46
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TN0601L,
VN0606L,
VN66AFD
VN0606L
TN0601L
O-226AA
O-226AA)
S-04279--Rev.
16-Jul-01
VN66AFD
VN66AF
TN0601L
VN0606L
0606l
7020.1
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transistor VN46AFD
Abstract: VN46AFD TO220SD
Text: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL
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VN46AFD
O-220SD
VNDQ06
transistor VN46AFD
TO220SD
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Untitled
Abstract: No abstract text available
Text: Hmzzàz TN0601L N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA 'V V (BR)DSS 60 1.8 BOTTOM VIEW •d (A) 0.47 1 SOURCE 2 GATE Performance Curves: VNDQ06 3 DRAIN 3 il— L-n • - É ? i ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN0601L
O-226AA)
VNDQ06
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Untitled
Abstract: No abstract text available
Text: H tSffA VN66AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR|DSS o *D rX ’ (A 3 1.46 60 FRONT VIEW TO-220SD 1 SOURCE 2 GATE 3 & T A B -D R A IN Performance Curves: VNDQ06 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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VN66AFD
O-220SD
VNDQ06
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transistor VN46AFD
Abstract: VN46AFD
Text: VN46AFD c r S ilic c x ìix JUm in c o rp o ra te d N-Channel E nhancem ent-M ode MOS Transistor TO-220SD TOP VIEW o PRODUCT SUMMARY V BR DSS (V) ••DS(ON) (n ) (A) PACKAGE 40 3 1.46 TO-22QSD 1 2 3 1 SOURCE 2 GATE 3 & TAB - DRAIN Performance Curves: VNDQ06 (See Section 7)
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VN46AFD
O-220SD
O-22QSD
VNDQ06
VN46AFD
transistor VN46AFD
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tq1004j
Abstract: No abstract text available
Text: TQ1004J N-Channel Enhancement-Mode MOS Transistor Arrays_ V BRJDSS T 2 60 TOP VIEW 14-PIN PLASTIC PRODUCT SUMMARY Dual-ln-Llne Package <lß •d (A 0.45 Performance Curves: VNDQ06 i— i - D ,[T h | D4 S i (T 13] s 4 12] g 4 Q ,[T ÏÏ] N/C
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TQ1004J
14-PIN
VNDQ06
10noec
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Untitled
Abstract: No abstract text available
Text: jre g s b 2N6660 N-Channel Enhancement-Mode MOS Transistor TO-39 TO-2Q5AD B O T T O M VIEW PRODUCT SUMMARY V (BR)DSS •d rDS(ON) (Û) (A) 3 1.1 60 2 GATE 3 & C A S E-D R A IN Performance Curves: VNDQ06 J ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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2N6660
VNDQ06
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VN46AFD
Abstract: 6178 vn0606m
Text: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line
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VNDQ06
O-205AD)
O-220SD
O-237
O-226AA)
14-Pin
2N6659,
2N6660
VN46AFD,
VN46AFD
6178
vn0606m
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2N6659
Abstract: No abstract text available
Text: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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2N6659
VNDQ06
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VN66AFD
Abstract: vn66a
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v
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TN0601L,
VN0606L,
VN66AFD
TN0601L
VN0606L
VN66AFD
S-04279--
16-Jul-01
vn66a
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2N6660
Abstract: s0437 2N6660 siliconix VQ1004J
Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5
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2N6660,
VQ1004J/P
2N6660
VQ1004J/P
S-04379--
16-Jul-01
s0437
2N6660 siliconix
VQ1004J
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vn0606m
Abstract: b0808
Text: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V
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TN0601L
VN0606L
VN0606M
VN66AFD
TN0601L,
VN0606L/M,
VN66AFI)
O-226AA
O-237
P-37992--Rev.
b0808
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gs 1117 ax
Abstract: VN66 TN0610L VN0606M
Text: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33
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TN0601L,
VN0606L/M,
VN66AFD
TN0601L
VN0606L
VN0606M
VN66AFD
O-237
P-37992--Rev.
gs 1117 ax
VN66
TN0610L
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VN66AFD
Abstract: vn66 TO-220SD VN66AD vn66a VN66AF 100-C 7060V VN664
Text: S IL IC O N IX INC • lflE D incorporated H Siliconix flSSM73S DDlMObb 7 ■ VN66 SERIES N-Channel Enhancement-Mode MOS Transistors "P3°l-07 PRODUCT SUMMARY PART NUMBER V BR DSS TDS(ON) (il) (V) TO-22Q/TO-220SD >d (A) PACKAGE VN66AD 60 3 1.7 TO-220 VN66AFD
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VN66AD
O-220
VN66AFD
O-220SD
VNDQ06
O-220/TO-220SD
T0-220SD
vn66
TO-220SD
vn66a
VN66AF
100-C
7060V
VN664
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VNDQ09
Abstract: VQ1006 VQ1004
Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4
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VQ1004
VQ1006
14-PIN
VQ1006
VNDQ06
VNDQ09
VNDQ09
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52426
Abstract: No abstract text available
Text: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M
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TN0601L,
VN0606L/M,
VN66AFD
TN0601L
VN0606L
VN0606M
VN66AFD
O-237
O-226AA,
O-237)
52426
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JANTX2N6660
Abstract: JANTXV2N6660
Text: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS
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2N6660JAN/JANTX/JANTXV_
2N6659/2N6660,
VQ1004J/P
VNDQ06
S-04279--
16-Jul-01
JANTX2N6660
JANTXV2N6660
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VN46AFD
Abstract: VNDQ1 vnd02 TD1001 VN46AF
Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)
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TN0201L,
TN0401L
VN0300L,
VN0300M
VQ1001J/P
VNDQ03
TD1001Y
TQ1001J
VN46AFD
VNDQ1
vnd02
TD1001
VN46AF
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4170A
Abstract: No abstract text available
Text: 'SSSSS TD1004Y Dual N-Channel Enhancement-Mode MOSFETs SO-8 PACKAGE PRODUCT SUMMARY V BRJDSS siq : Gicr S2Q: csanz •d (A 60 2 0.65 FEATURES APPLICATIONS • Electrically Isolated MOSFETs • MOSFET Drivers 1 8 2 7 3 6 XI 01 ~n D1 HU D2 4 5 ~ n D2 Top View
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TD1004Y
VNDQ06
4170A
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