TN0201L

Contextual Info: H IS S A TN0201L, TN0401L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BR|DSS PART NUMBER ro? c BOTTOM VIEW fD (A) TN0201L 20 1.2 0.64 TN0401L 40 1.2 0.64 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ03 u 3 ,i— 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

vn0300

Abstract: VN0300L VNDQ03
Contextual Info: VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (B R |D S S VN0300L VN0300M >D " s r (A) PACKAGE 30 1.2 0.64 TO-92 30 1.2 0.67 TO-237 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237 Performance Curves: VNDQ03

VN46AFD

Abstract: VNDQ1 vnd02 TD1001 VN46AF
Contextual Info: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)

tq1001j

Contextual Info: TQ1001J N-Channel Enhancement-Mode MOS Transistor Arrays_ PRODUCT SUMMARY TOP VIEW 14-PIN PLASTIC V BR DSS •d (V) rX ’ (A) 30 1.2 0.56 D ual-ln-Line Package Performance Curves: VNDQ03 s, [T D ,|T 3 D< G ,[ I ÏÏÏ] G4 13 ] S 4 [7 N /C

Contextual Info: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN0300L, TN0201L, TN0401L Single TO-237 • VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP

vn0300m

Contextual Info: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B

VQ1001J

Abstract: VQ1001P
Contextual Info: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D

VQ3001J

Abstract: VQ3001P
Contextual Info: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications

Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

Contextual Info: Tem ic siliC0Dl>_ TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber '' BR DSS M in (V) r DS(on) M ax (£2) y<3S(th) (V) I d (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V

VQ1001

Contextual Info: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7

Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS

9907

Abstract: 9907 a VQ3001J VQ3001P
Contextual Info: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits

0401L

Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

VQ1001J

Abstract: VQ1001P
Contextual Info: VQ1001J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications

TN0201L

Abstract: TN0401L VN0300L VN0300M
Contextual Info: TN0201L/0401L, VN0300L/M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

B0725

Contextual Info: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF

VQ3001J

Abstract: VQ3001P 70221
Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS

VNDQ1CHP

Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Contextual Info: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE

70221

Abstract: mosfet vq3001p VQ3001J VQ3001P
Contextual Info: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications

0401L

Abstract: VN0300L TN0401L TN0201L VN0300LS
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

25Q10

Contextual Info: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

Contextual Info: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features

VN0300M

Abstract: TN0201L TN0401L VN0300L
Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V