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    VN3515 Search Results

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    VN3515 Price and Stock

    Vishay Siliconix VN3515L-TR1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics VN3515L-TR1 3,500 2
    • 1 -
    • 10 $2.1294
    • 100 $1.5289
    • 1000 $1.3432
    • 10000 $1.3432
    Buy Now
    Quest Components VN3515L-TR1 1,600
    • 1 $4.3875
    • 10 $4.3875
    • 100 $4.3875
    • 1000 $1.9013
    • 10000 $1.755
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    Vishay Siliconix VN3515L

    MOSFET Transistor, N-Channel, TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components VN3515L 9,491
    • 1 $1.325
    • 10 $1.325
    • 100 $1.325
    • 1000 $0.6095
    • 10000 $0.5565
    Buy Now

    VN3515 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VN3515 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN3515L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN3515L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN3515L Vishay Transistor Mosfet N-CH 350V 0.15A 3TO-226AA Original PDF
    VN3515L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VN3515L-GP013 Supertex Transistor Mosfet N-CH 350V 0.15A 3TO-92 T/R Original PDF
    VN3515LP014 Supertex Transistor Mosfet N-CH 350V 0.15A 3TO-92 T/R Original PDF
    VN3515L-TR1 Vishay Transistor Mosfet N-CH 350V 0.15A 3TO-226AA T/R Original PDF

    VN3515 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VN3515

    Abstract: No abstract text available
    Text: Supertex inc. VN3515 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN3515 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    PDF VN3515 VN3515 A031610

    VN3515L

    Abstract: VN4012L
    Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L 18-Jul-08 VN3515L VN4012L

    TN2540

    Abstract: VN3515 VN3515L VN4012 VN4012L
    Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology


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    PDF VN3515L VN4012L VN4012 100mA 160mA TN2540 VN3515 VN3515L VN4012 VN4012L

    VN3515L

    Abstract: VN4012L
    Text: VN3515L/VN4012L Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. VN3515L VN4012L

    4012L

    Abstract: VN3515L VN4012L
    Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L 08-Apr-05 4012L VN3515L VN4012L

    VN3515

    Abstract: No abstract text available
    Text: VN3515 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN3515 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF VN3515 VN3515 A020309

    VN4012B

    Abstract: p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L
    Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 350V 15Ω 1.8V 0.15A — VN3515L 400V 12Ω 1.8V 0.15A VN4012B VN4012L Features Advanced DMOS Technology


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    PDF VN3515L VN4012L VN4012B 100mA 100mA, VN4012B p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L

    4012l

    Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
    Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


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    PDF VN3515L/VN4012L VN3515L VN4012L Nov-00 4012l marking code diode 04 to-18 siliconix VN3515L VN4012L

    sivn

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


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    PDF VN3515 DSFP-VN3515 A020209 sivn

    sivn

    Abstract: sivn fet 125OC VN3515 3515L
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    PDF VN3515 DSFP-VN3515 A020209 sivn sivn fet 125OC VN3515 3515L

    VN3515L

    Abstract: VN4012L AUG94
    Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. 15-Aug-94 VN3515L VN4012L AUG94

    Untitled

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    PDF VN3515 DSFP-VN3515 A102108

    VN3515L

    Abstract: VN4012L
    Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. 15-Aug-94 VN3515L VN4012L

    VN3515L

    Abstract: VN4012L
    Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications


    Original
    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. 15-Aug-94 VN3515L VN4012L

    4012L

    Abstract: No abstract text available
    Text: VN3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V N3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L


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    PDF VN3515L/VN4012L_ N3515L VN4012L S-04379-- 16-Jul-01 VN3515L7VN4012L 4012L

    Untitled

    Abstract: No abstract text available
    Text: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L


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    PDF VN3515L VN4012L VN4012B 100mA 100mA, TN06D

    Untitled

    Abstract: No abstract text available
    Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JÎ Order Number / Package BVDSS/ ^D S O N ^ G S (th ) b v dgs (max) (max) 350V 150 1.8V 0.15A VN3515L 400V 12 fl 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology


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    PDF VN3515L VN4012L capab50 VN3515 VN4012 300ns TN2540

    Untitled

    Abstract: No abstract text available
    Text: VN4012L, VN3515L N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR|DSS VN4012L 400 12 0.16 VN3515L 350 15 0.15 Performance Curves: JFES5& BOTTOM VIEW •d "P (A) VNDV40 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    PDF VN4012L, VN3515L VN4012L VN3515L O-226AA) VNDV40

    TN3512L

    Abstract: No abstract text available
    Text: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the


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    PDF TN3512L TN4012L VN3515L VN4012L VNDV40.

    Untitled

    Abstract: No abstract text available
    Text: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications


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    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--Rev.

    4012L

    Abstract: No abstract text available
    Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L


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    PDF VN3515L VN4012L 4012L 300ns 4012L

    Untitled

    Abstract: No abstract text available
    Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8


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    PDF VN3515L/VN4012L VN3515L VN4012L P-38281--

    Untitled

    Abstract: No abstract text available
    Text: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology


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    PDF VN4012B VN3515L VN4012L 100mA, 100mA VN4012 160mA

    Untitled

    Abstract: No abstract text available
    Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v dss/ ^ G S th I d (ON) (max) (min) Order Number / Package TO-92 350V 15& 1.8V 0.15A VN3515L 400V 12£2 1.8V 0.15A VN4012L Features Advanced DMOS Technology


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    PDF VN3515L VN4012L 100mA 100mA, 160mA