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    3515L Search Results

    3515L Result Highlights (2)

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    65863-515LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 30 Positions, 2.54 mm (0.1 in.), Vertical, Eject Latch Header 0.76 um (30 u\\.) Gold Mating Plating. Visit Amphenol Communications Solutions
    10118744-1133515LF Amphenol Communications Solutions C - Commercial Series; Mezzanine Plug, SMT; 1mm Pitch; 7mm Mated Height, 15p Visit Amphenol Communications Solutions
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    3515L Price and Stock

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    Infineon Technologies AG IRF3515L

    MOSFET N-CH 150V 41A TO262
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    DigiKey IRF3515L Tube 50
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    Samtec Inc TSW-135-15-L-D

    CONN HDR .100" 70POS
    Free Sample
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    DigiKey TSW-135-15-L-D Bulk 1
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    Avnet Americas TSW-135-15-L-D Bulk 1
    • 1 $4.11598
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    Mouser Electronics TSW-135-15-L-D
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    Newark TSW-135-15-L-D Bulk 1
    • 1 $6.2
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    Powell Electronics TSW-135-15-L-D 283 1
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    Master Electronics TSW-135-15-L-D
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    Sager TSW-135-15-L-D 429 1
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    Samtec Inc DW-35-15-L-D-285

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
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    DigiKey DW-35-15-L-D-285 Bulk 1
    • 1 $14.85
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    Samtec Inc DW-35-15-L-D-340

    FLEXIBLE BOARD STACKING HEADER W
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    DigiKey DW-35-15-L-D-340 Bulk 1
    • 1 $14.85
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    Samtec Inc DW-35-15-L-D-365

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
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    DigiKey DW-35-15-L-D-365 Bulk 1
    • 1 $14.85
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    3515L Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V


    OCR Scan     		VN3515L/VN4012L 3515L P-38281--Rev. 15-Aug-94 P-38281-- PDF

    4012L

    Abstract: No abstract text available
    Text: 3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V 3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L


    OCR Scan     		VN3515L/VN4012L_ N3515L VN4012L S-04379-- 16-Jul-01 VN3515L7VN4012L 4012L PDF

    VN3515L

    Abstract: VN4012L
    Text: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


    Original     		VN3515L/VN4012L VN3515L VN4012L 18-Jul-08 VN3515L VN4012L PDF

    4012L

    Abstract: VN3515L VN4012L
    Text: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


    Original     		VN3515L/VN4012L VN3515L VN4012L 08-Apr-05 4012L VN3515L VN4012L PDF

    4012l

    Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
    Text: 3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS


    Original     		VN3515L/VN4012L VN3515L VN4012L Nov-00 4012l marking code diode 04 to-18 siliconix VN3515L VN4012L PDF

    sivn

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


    Original     		VN3515 DSFP-VN3515 A020209 sivn PDF

    sivn

    Abstract: sivn fet 125OC VN3515 3515L
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN3515 DSFP-VN3515 A020209 sivn sivn fet 125OC VN3515 3515L PDF

    4012L

    Abstract: No abstract text available
    Text: 3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L


    OCR Scan     		VN3515L VN4012L 4012L 300ns 4012L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN3515 DSFP-VN3515 A102108 PDF

    220-10L

    Abstract: B250/220-25 B125/110-10 B80/70-10L fagor b380 Fagor B40/35-10 B40/35-10 B40 35-10 fagor b40 FAGOR B 380 C5000-3300
    Text: FAGÖR ELECTRONICS «E . - 3MSR3ES 0QQ0S03 T-23-G7 Silicon rectifier bridges in plastic case. 10 Amps, to 25 Amps. The plastic material carries U/L recognition 94V-0. Type Peak MaxAvgRect Input Inverse Current Voltage @ T=55°C Recommended Voltage T VRMS Vrrm


    OCR Scan     		0q00s03 FB1001 B40/35-10 FB1002 B80/70-10 FB1004 B125/110-10 FB1006 B250/220-10 FB1008 220-10L B250/220-25 B80/70-10L fagor b380 Fagor B40/35-10 B40 35-10 fagor b40 FAGOR B 380 C5000-3300 PDF