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    VM 256MB DDR400 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    TS3DDR4000ZBAR Texas Instruments 12-Bits 1:2 High Speed DDR2/DDR3/DDR4 Switch/Multiplexer 48-NFBGA -40 to 85 Visit Texas Instruments Buy

    VM 256MB DDR400 Datasheets Context Search

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    S80032VMCTW-75A

    Abstract: s80032vmctw vm 256MB DDR 400 sdram spectek SpecTek SpecTek SDRAM 256Mb DDR266 DDR333 DDR400B PC2100
    Text: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM Plastic Package: 66-pin TSOP – OCPL (400 mil width, 0.65mm pin pitch) 60-ball FBGA (8mm X 14mm, 60 Ball) FEATURES • PC2100, PC2700, and PC3200 compatible • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V (For –6A & 75A)


    Original     		PDF 256Mb: 66-pin 60-ball PC2100, PC2700, PC3200 S40064 S80032 S160016 S80032VMCTW-75A s80032vmctw vm 256MB DDR 400 sdram spectek SpecTek SpecTek SDRAM 256Mb DDR266 DDR333 DDR400B PC2100

    S80032VMCTW-75A

    Abstract: vm 256MB DDR 400 SpecTek DDR266 DDR333 DDR400B PC2100 PC2700 PC3200 256mb ddr333 200 pin
    Text: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM 60-ball FBGA (8mm X 14mm, 60 Ball) FEATURES • ROHS Compliant • PC2100, PC2700, and PC3200 compatible • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V (For –6A & - Package Types (Leaded): 66-pin Plastic TSOP, OCPL


    Original     		PDF 256Mb: 60-ball PC2100, PC2700, PC3200 66-pin S80032VMCTW-75A vm 256MB DDR 400 SpecTek DDR266 DDR333 DDR400B PC2100 PC2700 256mb ddr333 200 pin

    S80032VMCTW-75A

    Abstract: s80032vmctw S80032 S160016 vm 256MB DDR 400 SpecTek DDR266 DDR333 DDR400B PC2100
    Text: 256 Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM S40064 – 16 Meg x 4 x 4 banks S80032 – 8 Meg x 8 x 4 banks S160016 – 4 Meg x 16 x 4 banks FEATURES OPTIONS (continued) • PC2100, PC2700 and PC3200 compatible • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V (For –6A &


    Original     		PDF S40064 S80032 S160016 PC2100, PC2700 PC3200 256Mb: S80032VMCTW-75A s80032vmctw S80032 S160016 vm 256MB DDR 400 SpecTek DDR266 DDR333 DDR400B PC2100

    HYB18TC256160BF

    Abstract: No abstract text available
    Text: February 2007 HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC256160BF 256-Mbit Double-Data-Rate-Two SDRAM HYB18TC256160BF Revision History: 2007-02, Rev. 1.21


    Original     		PDF HYB18T C25616 256-Mbit HYB18TC256160BF

    HYB18TC256160BF-3S

    Abstract: VM 256MB DDR400 HYB18TC256800BF 800E DDR400
    Text: May 2007 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Internet Data Sheet HYB18TC256[80/16]0BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.3, 2007-05


    Original     		PDF HYB18T C25680 C25616 256-Mbit HYB18TC256 HYB18TC256800BF HYB18TC256160BF-3S VM 256MB DDR400 HYB18TC256800BF 800E DDR400

    RCD 1230 SAMSUNG

    Abstract: No abstract text available
    Text: 512Mb M-die DDR-II SDRAM Target 512Mb M-die DDR-II SDRAM Specification Version 0.8 Rev. 0.8 Nov. 2002 Page 1 of 80 512Mb M-die DDR-II SDRAM Target Contents 1. Key Feature 2. Package Pinout & Addressing 2.1 Package Pintout 2.2 Input/Output Function Description


    Original     		PDF 512Mb RCD 1230 SAMSUNG

    Untitled

    Abstract: No abstract text available
    Text: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS12421 HY5PS12821 HY5PS121621 512Mb

    DDR533

    Abstract: K4T51043QM-GCD4 K4T51043QM-GCE5 K4T51043QM-GLD4 K4T51043QM-GLE5
    Text: 512Mb M-die DDR-II SDRAM Target 512Mb M-die DDR-II SDRAM Specification Version 0.8 Rev. 0.8 Nov. 2002 Page 1 of 80 512Mb M-die DDR-II SDRAM Target Contents 1. Key Feature 2. Package Pinout & Addressing 2.1 Package Pintout 2.2 Input/Output Function Description


    Original     		PDF 512Mb DDR533 K4T51043QM-GCD4 K4T51043QM-GCE5 K4T51043QM-GLD4 K4T51043QM-GLE5

    VM 256MB DDR400

    Abstract: ddr2 pin
    Text: HY5PS56421 L F HY5PS56821(L)F HY5PS561621(L)F 256Mb DDR2 SDRAM HY5PS56421(L)F HY5PS56821(L)F HY5PS561621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS56421 HY5PS56821 HY5PS561621 256Mb VM 256MB DDR400 ddr2 pin

    Untitled

    Abstract: No abstract text available
    Text: HY5PS56421 L F HY5PS56821(L)F HY5PS561621(L)F 256Mb DDR2 SDRAM HY5PS56421(L)F HY5PS56821(L)F HY5PS561621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS56421 HY5PS56821 HY5PS561621 256Mb

    Untitled

    Abstract: No abstract text available
    Text: HY5PS56421 L F HY5PS56821(L)F HY5PS561621(L)F 256Mb DDR2 SDRAM HY5PS56421(L)F HY5PS56821(L)F HY5PS561621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS56421 HY5PS56821 HY5PS561621 256Mb

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    V59C1

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25A 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns V59C1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Description Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks.


    Original     		PDF EDE2504AASE EDE2508AASE EDE2516AASE EDE2504AA EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0427E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Description Features The EDE2508ABSE is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks. It is packaged in 60-ball FBGA (µBGA) package.


    Original     		PDF EDE2508ABSE-GE EDE2516ABSE-GE EDE2508ABSE 60-ball EDE2516ABSE 84-ball M01E0107 E0657E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508AASE-DF, -BE, -AE 32M words x 8 bits EDE2516AASE-DF, -BE, -AE (16M words × 16 bits) Description Features The EDE2508AA is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks.


    Original     		PDF EDE2508AASE-DF, EDE2516AASE-DF, EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0515E11

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM L EO EDE2508AASE-DF, -BE, -AE 32M words x 8 bits EDE2516AASE-DF, -BE, -AE (16M words × 16 bits) Features The EDE2508AA is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks.


    Original     		PDF EDE2508AASE-DF, EDE2516AASE-DF, E0515E12 M01E0107

    ede2508abse-5c-e

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2508ABSE 32M words x 8 bits EDE2516ABSE (16M words × 16 bits) Description Features The EDE2508ABSE is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks. It is packaged in 60-ball FBGA (µBGA) package.


    Original     		PDF EDE2508ABSE EDE2516ABSE EDE2508ABSE 60-ball EDE2516ABSE 84-ball M01E0107 E0573E21 ede2508abse-5c-e

    VM 256MB DDR400

    Abstract: DDR2-700
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508AASE-DF, -BE, -AE 32M words x 8 bits EDE2516AASE-DF, -BE, -AE (16M words × 16 bits) Description Features The EDE2508AA is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks.


    Original     		PDF EDE2508AASE-DF, EDE2516AASE-DF, EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0515E12 VM 256MB DDR400 DDR2-700

    VM 256MB DDR400

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Description Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks.


    Original     		PDF EDE2504AASE EDE2508AASE EDE2516AASE EDE2504AA EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0427E11 VM 256MB DDR400

    N2TU51216

    Abstract: N2TU51280DE-BE
    Text: N2TU51280DE / N2TU51216DG Preliminary 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C -AC -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF N2TU51280DE N2TU51216DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) N2TU51216 N2TU51280DE-BE

    NT5TU32M16DG

    Abstract: No abstract text available
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max.


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) NT5TU32M16DG

    NT5TU32M16DG

    Abstract: Nanya NT5TU32M16DG NT5T
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max.


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) NT5TU32M16DG Nanya NT5TU32M16DG NT5T

    nt5tu32m16dg

    Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) x8/1066 nt5tu32m16dg NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD