MRF156R
Abstract: MRF156 Arco 469 ceramic capacitor
Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.
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MRF156/D
MRF156
MRF156R
MRF156
MRF156/D*
MRF156R
Arco 469 ceramic capacitor
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MRF148A
Abstract: mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER
Text: Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148/D
MRF148A
MRF148A
mica ssb
2204B
J101
VK200
RF TRANSFORMER 2 UH
Unelco j101
D1130
UNELCO MICA CAPACITORS
DIODE D11 ZENER
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RF TRANSFORMER 2 UH
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD
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MRF148A
MRF148A
RF TRANSFORMER 2 UH
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VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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MRF166 211-07
Abstract: motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820
Text: MOTOROLA Order this document by MRF166/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166 MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500
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MRF166/D
MRF166
MRF166C
MRF166C
MRF166)
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
MRF166 211-07
motorola J122
MOTOROLA J210
SD1902
BLF244 and equivalent
F 2452 mosfet
zener motorola
1N5925A
J651
DV2820
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vk200 choke
Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140/D
MRF140
vk200 choke
arco 465
UNELCO MICA CAPACITORS
VK200-4B
arco capacitors 262
k 246 transistor fet
VK200 FERRITE
2204B
J101
MRF140
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VK200 rfc
Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
VK200 rfc
vk200 rfc with 6 turns
SD1460
vk200 choke
vk200
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vk200 rfc with 6 turns
Abstract: VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
vk200 rfc with 6 turns
VK200 rfc
choke vk200
SD1460
vk200
vk200 choke
vk200 rf choke
VK200-19/4B
vk200 chokes
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mrf150
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MRF150/D*
mrf150
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VK200-20
Abstract: VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier
Text: MOTOROLA Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148/D
MRF148
MRF148/D*
VK200-20
VK200-20/4B
MRF148
"RF MOSFET"
UNELCO
UNELCO MICA CAPACITORS
VK200 20/4B
vk200 choke
VK200 FERRITE
rf mosfet power amplifier
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MRF148A
Abstract: 2204B J101 VK200 Nippon capacitors
Text: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148A/D
MRF148A
MRF148A
2204B
J101
VK200
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140/D
MRF140
MRF140/D*
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SD1477
Abstract: arco arco 462 vk200 M111
Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER P OUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
arco
arco 462
vk200
M111
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SD1477
Abstract: vk200 M111
Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
vk200
M111
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •
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MRF148
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD
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MRF148
MRF148
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175mhz
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •
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MRFT48
175mhz
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ferroxcube for ferrite beads 56-590-65
Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar
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N5944
PA18936Â
2N5944
56-590-65/3B
VK200/10-3B
ferroxcube for ferrite beads 56-590-65
VK200 ferrite
inductor vk200
VK200 rfc
VK200
ferroxcube for ferrite beads
THOMSON-CSF electrolytic
VK200 INDUCTOR
565-9065
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rfc vk200
Abstract: SD1012
Text: 04C D J L j ^ l L 37 S G S-THOMSON IT '7 ? ~ P 7 0000015 ^ I SOLID $TAtE MIÇROWAVE SD1012-4 ! ^THOMSON-CSF COMPONENTS CORPORATION r j:Mont^pmVvviÎÎè^PAX8^36 • C2fSt 362-85QÓ Ì« TWX Slb:66r^729St^ 7.5 VOLT VHF COMMUNICATIONS TRANSISTOR DESCRIPI10N
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SD1012-4
362-85QÓ
729St^
DESCRIPI10N
SD1012-4
10/UF
VK200
rfc vk200
SD1012
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SD1088
Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
Text: s G S - T H O M S O N OMC 0 | 7^ 53? aGOOGEl 4 | ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at
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SD1088
VK200
vk200 RFC
vk200 rfc with 6 turns
zd470
rfc vk200
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MRFC572
Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain
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MRF571
MRF572
MRFC572
MRF671
MRF572
MRFS72
MRF571,
MRF572,
MRFC572
MRF671
vk200* FERROXCUBE
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON * 7 / SD1477 D ü flK ê œ iL iiig T n s iiD Ê i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . 175 MHz » 12.5 VOLTS • COMMON EMITTER ■ P out = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
-K6098,
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vk200 RFC
Abstract: thomson microwave transistor sd1234
Text: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R
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SD1234
SD1234
VK200
vk200 RFC
thomson microwave transistor
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VK200 rfc
Abstract: SD1410 SD-1410
Text: G S-THOMSON GSC D | 7 ^ 2 3 7 □ÜGQ1 7b T SOLID STATE MICROWAVE SD1410-1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville,.PA 18936» {215} 362-8500 • TWX 510-66Î-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1410-1 is a 12 volt epitaxial silicon NPN planar
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SD1410-1
SD1410-1
VK200
VK200 rfc
SD1410
SD-1410
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