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    VK200 4B INDUCTOR Search Results

    VK200 4B INDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR33J0HD Murata Manufacturing Co Ltd Fixed IND 330nH 630mA POWRTRN Visit Murata Manufacturing Co Ltd

    VK200 4B INDUCTOR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and


    Original     		PDF MRF148 30WPEP) -60dB 211-0istortion d9-13) MIL-STD-1311 2204B, VK200 20/4B

    DL110

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
    Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    5251f

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L 5251f

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV 10orola MRF175LU MRF175LU/D*

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor

    MOTOROLA LINEAR HF

    Abstract: MRF175LV Nippon capacitors MRF175
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LV MRF175LU/D* MRF175LU/D MOTOROLA LINEAR HF Nippon capacitors MRF175

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D*

    VK200 20/4B inductor

    Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* VK200 20/4B inductor VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LV VK200 Nippon capacitors

    planar transformer theory

    Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		PDF MRF275G/D MRF275G planar transformer theory MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors

    MRF240

    Abstract: VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150
    Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.


    Original     		PDF MRF240/D MRF240 MRF240/D* MRF240 VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150

    MRF240

    Abstract: BUY60 MRF240 equivalent
    Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    Original     		PDF MRF240/D MRF240 MRF240 MRF240/D* MRF240/D BUY60 MRF240 equivalent

    MRF237

    Abstract: Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF1946A MRF transistor 237 MRF high power transistor
    Text: Order this document by AN955/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN955 A COST EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF


    Original     		PDF AN955/D AN955 MRF1946A MRF237 Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF transistor 237 MRF high power transistor

    MRF237

    Abstract: mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 MRF1946A Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for


    Original     		PDF AN955/D AN955 MRF1946A MRF237 mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor

    j130 fet

    Abstract: MRF27SG
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND


    OCR Scan     		PDF MRF275G MRF275G j130 fet MRF27SG

    motorola AN211A

    Abstract: 42256 planar transformer theory
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc


    OCR Scan     		PDF MRF275G MRF275G motorola AN211A 42256 planar transformer theory

    731 MOSFET

    Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF MRF275L/D MRF275L/D 731 MOSFET 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L

    SU 179 transistor

    Abstract: SU 179
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF RF275L/D SU 179 transistor SU 179

    sp 0937

    Abstract: VK200 inductor of high frequencies Nippon capacitors
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors

    L9181

    Abstract: l6262 Nippon capacitors L 0946
    Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc


    OCR Scan     		PDF RF275G/D L9181 l6262 Nippon capacitors L 0946

    VK200 INDUCTOR

    Abstract: inductor vk200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF MRF175LU MRF175LV MRF175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200

    J115 mosfet

    Abstract: MRF175LU
    Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF MRF175LU MRF175LV 28cal MRF175L MRF175LU MRF175LV J115 mosfet

    mosfet te 2304

    Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		PDF MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory