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    VITESSE GATE ARRAY Search Results

    VITESSE GATE ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    VITESSE GATE ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OA41

    Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
    Text: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW


    Original     		PDF MIL-STD-883 G51017-0, OA41 LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER

    XN2222

    Abstract: OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications
    Text: VITESSE Preliminary Data Sheet GLX Family High Performance Low Power GaAs Gate Arrays Features • Sea-of-Gates Core • Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility


    Original     		PDF G52144-0, XN2222 OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications

    d 2331

    Abstract: half adder ic number of half adder ic with full specification vts 7070
    Text: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to


    OCR Scan     		PDF T502331 00D0574 LT117A LT117A d 2331 half adder ic number of half adder ic with full specification vts 7070

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops


    OCR Scan     		PDF VSC10000 100K/10K/10KH 10K/10KH

    HLP5

    Abstract: full adder using x-OR and NAND gate OAI221 OA41 G5108
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SCFUDCFL Gate Arrays SCFX Family Features • Tailored Specifically for High Performance Telecommunications and Data Communica­ tions Applications. 2.5 GHz Performance. Phase-Locked Loop Megacells Available:


    OCR Scan     		PDF STS-3/STS-12 G51085-0, 00030flfl HLP5 full adder using x-OR and NAND gate OAI221 OA41 G5108

    ring oscillator

    Abstract: VSC1500TC dc to ac Inverter evaluation board Semiconductor ring structure
    Text: VITESSE SEMICONDUCTOR 30E J> • =1502331 GüüGaôô h « V T S VSC1500TC High Speed GaAs 1500 Gate Structured Cell Array Test Chip Introduction The VSC1500TC is a test chip personaliza­ tion of the VSC1500 high speed GaAs Gate Array. This chip is packaged in a ceramic 52


    OCR Scan     		PDF VSC1500TC VSC1500TC VSC1500 VSC1500DUT ring oscillator dc to ac Inverter evaluation board Semiconductor ring structure

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VSC3K/V5C5K/VSC1 OK/ VSG15K/VSC30K High Performance FURY Family Gate Arrays FEATURES • Up to 30,500 Equivalent Gates, Channeled Architecture • Mil-Std-883C, Level B Screening and Qualification Available • ECL and TTL Signal Levels • Commercial, Industrial, Military and


    OCR Scan     		PDF Mil-Std-883C, VSG15K/VSC30K TSG2331 0D0103T

    Untitled

    Abstract: No abstract text available
    Text: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


    OCR Scan     		PDF VSC1520 VSC1500DUT VS15E0Ã

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET VITESSE FX-M Family High Performance Gate Arrays for Military Applications SEMICONDUCTOR CORPORATION Features • Superior Perform ance: High Speed and Low Pow er Dissipation 5 Arrays from 20K to 35 0 K Gates • Mature, Rad iation Hard, G aA s E nhancem ent/


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ‘ lira % i 1992 DATA SHEET VITESSE SEMICONDUCTOR CORPORATION FX-M Family High Performance Gate Arrays for M ilitary Applications Features • Superior Perform ance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, G aA s Enhancem ent/ Depletion M E S F E T Process


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VG FX20K /V 6FX 40K /V G FX 1O O K / VG FX 200K /V G FX 350K H igh Performance FX Family Gate Arrays FEATURES • Superior performance: High speed and low power dissipation • Embedded custom functions and megacell options available • Channelless array architecture


    OCR Scan     		PDF FX20K GFX20K/VGFX40K/VGFX100K/VGFX200K/VGFX350K

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET VITESSE FX~MFam ily " " “ SEMICONDUCTOR CORPORATION H igh P erform ance G ate Arrays for M ilitary Applications Features • Superior Performance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, GaAs Enhancement/ Depletion M ESFET Process


    OCR Scan     		PDF IL-STD-883C,

    G52020-0

    Abstract: VSC10000
    Text: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)


    OCR Scan     		PDF VSC10000 100K/10K/10KH 10K/1 G52020-0 VSC10000

    on222 transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW


    OCR Scan     		PDF MIL-STD-883 G51017-0, on222 transistor

    Untitled

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SLX Family Low Power GaAs Standard Cell Arrays Features • Standard Cell Core • Low-Power Macros Available • Five Array Sizes: 10K, 26K, 48K, 72K and 110K Usable Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL,


    OCR Scan     		PDF 00034b4 G52150-0,

    OA2222L

    Abstract: XN2222 025x
    Text: SEMICONDUCTOR CORPORATION Data Sheet High Performance GLX Family Low Power GaAs Gate Arrays Features • Sea-of-Gates Core Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility


    OCR Scan     		PDF 110nW G52144-0, OA2222L XN2222 025x

    A2N transistor

    Abstract: No abstract text available
    Text: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process


    OCR Scan     		PDF R502331 00DQ27R VSC1500 100K/10KH VSC1500 VSC1500TC) VSC1500TC, A2N transistor

    LT1038

    Abstract: No abstract text available
    Text: High Performance 2400 Gate TTL Compatible GaAs Gate Array FEATURES • Superiorperformance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3,1 .5 mm wire - TTL/CMOS inputs/outputs to support up to


    OCR Scan     		PDF LT117 LT117A LT1038 LT117A. LT1038

    Untitled

    Abstract: No abstract text available
    Text: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


    OCR Scan     		PDF 100K/10KH

    Untitled

    Abstract: No abstract text available
    Text: VIT E SS E S E M I C O N D U C T O R 3QE D • =1502331 0 0 0 0 5 7 2 2 « V T S r ^ 2 -J /~ Ÿ Û Features Architecture • Superior Performance: High Speed, High Density, Very Low Pow er Dissipation • Proven G aA s E /D M E S F E T Process • Array Perform ance


    OCR Scan     		PDF VSC4500/VSC2000

    ECL IC NAND

    Abstract: No abstract text available
    Text: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n


    OCR Scan     		PDF

    A2N transistor

    Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
    Text: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):


    OCR Scan     		PDF VSC1500/VSC1520 100K/10KH A2N transistor FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VSC3K/VSC5K/VSC1OK/VSC15 K / VSC20K8R/VSC30K High Performance FURY Series G a te Arrays FEATURES • Superior performance: High speed/low power • High density channelled architecture up to 100% utilization • Proven 0.8(1 H-GaAs E/D M ESFET process


    OCR Scan     		PDF VSC3K/VSC5K/VSC1OK/VSC15 VSC20K8R/VSC30K VSC30K