P-Channel TrenchFET Power MOSFET SOT-23
Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Text: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other
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Si4467DY
Si6465DQ
Si4463DY
Si6969DQ
Si9434DY
Si9433DY
Si4425DY
Si4435DY-RevA
Si9430DY
Si9435DY
P-Channel TrenchFET Power MOSFET SOT-23
TP0101T equivalent
P-CHANNEL POWER MOSFET SO-8
TN0201T
DUAL P- MOSFET SO-8
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0858T
Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
Text: Siliconix Vishay MOSFETs and Standard Products Visit VishayÕs Website at www.vishay.com LITTLE FOOT¨ Power MOSFETs P-Channel MOSFETs LITTLE FOOT ¨ power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other
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Si4467DY
TN0200T
TP0101T
TN0200TS
TP0610T
TN0201T
VP0610T
VN0605T
2N7002
TN2460T
0858T
VP0610T
siliconix catalog dual j-fet
MMBFJ176
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JEDEC Code e3
Abstract: IEC-60068-2 J-STD-020B E3 SOT MILITARY QUALIFIED DIP SWITCHES SSOT-23 IEC600682-58 QFN-16 SC-75A SC-89
Text: 100% Matte Tin Sn -Plated Family of Products Released with “–E3” suffix New Vishay Siliconix Matte Tin-Plated Packages Meet Requirements for Both Lead-Based and Lead-Free Solders Highlights: • 100% Matte Tin (Sn) plating replaces standard Tin/Lead (Sn/Pb) plating on Vishay Siliconix
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J-STD-020B)
QFN-16
SC-70
SC-89
O-100
OT-23
TSOT-23
SQFP-48
JEDEC Code e3
IEC-60068-2
J-STD-020B
E3 SOT
MILITARY QUALIFIED DIP SWITCHES
SSOT-23
IEC600682-58
QFN-16
SC-75A
SC-89
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Si4410
Abstract: Si4410BDY-E3 Si4410BDY Si4410BDY-T1 Si4410BDY-T1-E3 Si4410DY-REVA
Text: Specification Comparison Vishay Siliconix Si4410BDY vs. Si4410DY-REVA Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4410BDY Replaces Si4410DY-REVA Si4410BDY-E3 (Lead (Pb)-free version) Replaces Si4410DY-REVA
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Si4410BDY
Si4410DY-REVA
Si4410BDY-E3
Si4410BDY-T1
Si4410-T1-REVA
Si4410BDY-T1-E3
Si4410
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AN609
Abstract: Si4410BDY
Text: Si4410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4410BDY
AN609
15-Mar-07
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Si4410DY SPICE Device Model
Abstract: Si4410DY
Text: \\\ SPICE Device Model Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4410DY
0-to-10V
29-Jul-03
Si4410DY SPICE Device Model
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72284
Abstract: Si4410BDY Si4410BDY SPICE Device Model
Text: SPICE Device Model Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4410BDY
0-to-10V
15-May-03
72284
Si4410BDY SPICE Device Model
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72284
Abstract: Si4410BDY
Text: SPICE Device Model Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4410BDY
18-Jul-08
72284
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Si4410BDY
Abstract: Si4410BDY-T1
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch
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Si4410BDY
Si4410BDY--T1
Si4410BDY--E3
Si4410BDY-T1--E3
08-Apr-05
Si4410BDY-T1
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Untitled
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch
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Si4410BDY
Si4410BDY--T1
Si4410BDY--E3
Si4410BDY-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch
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Si4410BDY
Si4410BDY--T1
Si4410BDY--E3
Si4410BDY-T1--E3
S-50366--Rev.
28-Feb-05
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Untitled
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
11-Mar-11
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Si4410BDY
Abstract: Si4410BDY-T1
Text: Si4410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) 30 APPLICATIONS rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D Battery Switch D Load Switch D SO-8 S 1 8 D S 2
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Si4410BDY
Si4410BDY-T1
S-03916--Rev.
19-May-03
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Untitled
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/96/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
18-Jul-08
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SI4410BDY-T1-GE3
Abstract: Si4410BDY-T1-E3 Si4410BDY
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
18-Jul-08
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SI4410B
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4410B
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Si4410BDY
Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
11-Mar-11
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Si4410BDY
Abstract: Si4410BDY-T1
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 APPLICATIONS D Battery Switch D SO-8 S 1 8 D S 2 7 D S 3 6
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Si4410BDY
Si4410BDY-T1
S-31990--Rev.
13-Oct-03
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MLL34
Abstract: ic 3525 pwm application dc to dc converter DIFS4 AN718 P54C Si4410DY Si9145 Si9145BY
Text: AN718 Vishay Siliconix AN718 Powering the Pentium VRE with the Si9145 Voltage Mode Controlled PWM Converter BENEFITS • First and only Intel-approved switching converter solution to provide static and dynamic voltage regulation for the Pentium VRE microprocessor.
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AN718
Si9145
SO-16
Si9145B
TPSD107K010R
CRCW0805224JRT1
VJ0805A221KXAAT
CONN2X15
LM393M
MLL34
ic 3525 pwm application dc to dc converter
DIFS4
AN718
P54C
Si4410DY
Si9145BY
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Si4410DY-T1-REVA
Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3
Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA
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Si4410DY
Si4410DY-REVA
Si4410DY-T1-REVA
Si4410DY-REVA-E3
Si4410DY-T1-A-E3
08-Apr-05
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SI4410DY-T1
Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3 Si4410DY-T1-REVA
Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA
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Si4410DY
Si4410DY-REVA
Si4410DY-T1-REVA
Si4410DY-REVA-E3
Si4410DY-T1-A-E3
18-Jul-08
SI4410DY-T1
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SI4435D
Abstract: 70026 nichicon pl series capacitors pc motherboard schematics
Text: VISHAY - S Î9140 Vishay Siliconix SMP Controller For High Performance Process Power Supplies FEATURES • Runs on 3 .3 - or 5-V Supplies • High Frequency O peration >1 MHz •
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000-V
Si9140CQ
Si9140
Si4410DY
Si4435DY
S-58034--
15-Mar-99
SI4435D
70026
nichicon pl series capacitors
pc motherboard schematics
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SI4435D
Abstract: vishay sj 56
Text: VISHAY _ SÎ9140 Vishay Siliconix SMP Controller For High Performance Process Power Supplies F EATURES • Runs on 3 .3 - or 5-V Supplies • High Frequency O peration >1 MHz • Full S e t of Protection C ircuitry • Adjustable, High Precision O utput Voltage
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Si9140CQ
Si9140
Si4410DY
Si4435DY
S-58046--
25-Jan-99
SI4435D
vishay sj 56
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L110i
Abstract: MOSFET 20 NE 50 Z R9913
Text: _ Si9140 Vishay S iliconix SMP Controller For High Performance Process Power Supplies FEATURES • Runs on 3.3- or 5-V Supplies • Adjustable, High Precision Output Voltage • High Frequency Operation >1 MHz
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Si9140
000-V
Si9140CQ/DQ
Si9140
S2SM73S
0017flin
L110i
MOSFET 20 NE 50 Z
R9913
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