B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
08-Apr-05
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Si2301DS-T1
Abstract: SI2301DS A1 marking code
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
18-Jul-08
A1 marking code
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SI2301DS
Abstract: Si2301DS-T1 70627
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
S-31990--Rev.
13-Oct-03
70627
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Si2304BDS
Abstract: Si2304BDS-T1
Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1--E3
S-32412--Rev.
24-Nov-03
Si2304BDS-T1
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SI2304BDS
Abstract: No abstract text available
Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1
S-32137--Rev.
27-Oct-03
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SI2301 equivalent
Abstract: SI2301BDS Si2301 Si2301BDS-T1
Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = - 4.5 V - 2.4 0.150 @ VGS = - 2.5 V - 2.0 VDS (V) - 20 TO-236 (SOT-23) G 1 3 S Ordering Information: Si2301BDS-T1 D 2 Top View Si2301 BDS (L1)* *Marking Code
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Si2301BDS
O-236
OT-23)
Si2301BDS-T1
Si2301
S-31990--Rev.
13-Oct-03
SI2301 equivalent
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S31516
Abstract: s-31516
Text: Si2315BDS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.2 0.065 @ VGS = - 2.5 V - 2.8 0.100 @ VGS = - 1.8 V - 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315BDS *(M5) *Marking Code
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Si2315BDS
O-236
OT-23)
S-31516--Rev.
14-Jul-02
S31516
s-31516
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SOT 23 marking code a6 diode
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
S-31873--Rev.
15-Sep-03
SOT 23 marking code a6 diode
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Untitled
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
08-Apr-05
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A6 marking
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
25lectual
18-Jul-08
A6 marking
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Si2308DS
Abstract: Si2308DS-T1 20a8
Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code Ordering Information: Si2308DS-T1
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Si2308DS
O-236
OT-23)
Si2308DS-T1
S-31725--Rev.
18-Aug-03
20a8
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SI2328ds rev
Abstract: Si2328DS Si2328DS-T1
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2328DS
O-236
OT-23)
Si2328DS-T1
S-31725--Rev.
18-Aug-03
SI2328ds rev
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Untitled
Abstract: No abstract text available
Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View
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Si5404DC
Si5404DC-T1
08-Apr-05
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Si5404DC
Abstract: Si5404DC-T1
Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View
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Si5404DC
Si5404DC-T1
18-Jul-08
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Si5404DC
Abstract: Si5404DC-T1
Text: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View
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Si5404DC
Si5404DC-T1
S-31989--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: S392D VISHAY Vishay Semiconductors Dual RF PIN Diode Features 3 • Wide frequency range 10 MHz to 1 GHz Applications 1 Current controlled HF resistance in adjustable attenuators 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: 8 mg Parts Table
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S392D
OT-23
S392D-GS08
D-74025
21-May-03
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Untitled
Abstract: No abstract text available
Text: S392D VISHAY Vishay Semiconductors Dual RF PIN Diode Features 3 • Wide frequency range 10 MHz to 1 GHz Applications 1 Current controlled HF resistance in adjustable attenuators 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: 8 mg Parts Table
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S392D
OT-23
S392D
S392D-GS08
D-74025
21-May-03
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Untitled
Abstract: No abstract text available
Text: S392D VISHAY Vishay Semiconductors Dual RF PIN Diode Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 18109 Mechanical Data Case: Plastic case SOT-23 Weight: approx. 8.1 mg Packaging Codes/Options:
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S392D
OT-23)
S392D
S392D-GS18
S392D-GS08
D-74025
03-May-04
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S392D
Abstract: S392D-GS08 S392D-GS18
Text: S392D VISHAY Vishay Semiconductors RF PIN Diode - Dual in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 18109 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg
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S392D
OT-23
OT-23
S392D-GS18
S392D-GS08
D-74025
09-Jul-04
S392D
S392D-GS08
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S392D
Abstract: S392D-GS08 S392D-GS18
Text: S392D Vishay Semiconductors RF PIN Diode - Dual in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/ 95/EC and WEEE 2002/96/EC e3 3 Applications 1 2 18109 Current controlled HF resistance in adjustable
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S392D
OT-23
95/EC
2002/96/EC
OT-23
S392D-GS18
S392D-GS08
18-Jul-08
S392D
S392D-GS08
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Untitled
Abstract: No abstract text available
Text: S392D-V-GH Vishay Semiconductors RF PIN Diodes - Dual Series Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive
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S392D-V-GH
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
S392D-V-GH
S392D-V-GH-08
18-Jul-08
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S392D
Abstract: S392D-GS08 S392D-GS18
Text: S392D Vishay Semiconductors RF PIN Diode - Dual in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/ 95/EC and WEEE 2002/96/EC e3 3 Applications 1 2 18109 Current controlled HF resistance in adjustable
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S392D
OT-23
95/EC
2002/96/EC
OT-23
S392D-GS18
S392D-GS08
08-Apr-05
S392D
S392D-GS08
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