SI2301DS
Abstract: S5135
Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si2301DS
O-236
OT-23)
S-51354--Rev.
11-Dec-96
S5135
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SI2301DS
Abstract: No abstract text available
Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si2301DS
O-236
OT-23)
S-51354--Rev.
11-Dec-96
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Untitled
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
08-Apr-05
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Encoder HED_ 5540
Abstract: 110371 DC-Tacho maxon motor a max gear motor 40 rpm maxon motor 1871687 gear first reduction hed-5540 114437
Text: maxon motor maxon gear – Important considerations When selecting a gear-motor, please keep the following suggestions in mind: Reduce the motor speed by dividing by the reduction ratio. Increase the motor torque by multiplying times gearhead ratio times gearhead efficiency. The maximum efficiency is
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Si2301DS
Abstract: No abstract text available
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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Si2301DS
Abstract: vishaysiliconix
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
vishaysiliconix
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Si2301DS-T1
Abstract: SI2301DS A1 marking code
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
18-Jul-08
A1 marking code
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SI2301DS
Abstract: a1 marking code
Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 * rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 *–20-V VDS version of the Si2301DS, available Q4’97. Contact Product Marketing for further information.
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Si2301DS
O-236
OT-23)
S-51988--Rev.
17-Mar-97
a1 marking code
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8LST
Abstract: PAN 3504 DIN65194-22D VG96912L12 DIN65194-20 VG96912L14 SN-HE308-13-15-1-7 VG96912 DIN65194-16 Souriau FCI 8525
Text: 8ST Series Description Applications • A high density connector from 1 to 128 contacts • Sizes 22D, 20, 16, 12, # 16 coax and # 8 triax • Bayonet locking system • MIL-C 38999 Series I contact layouts • 100% scoop proof • EMI/RFI shielding and shell-to-shell
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SI2301DS
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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8LST
Abstract: vg96912 J62.017 8ST Series PAN 3504 8500 17 SOURIAU DIN65194-22D DIN65194-20 SN-HE308-13-11-1-7 PAN6433-1
Text: 8ST Series Description Applications • A high density connector from 1 to 128 contacts • Sizes 22D, 20, 16, 12, # 16 coax and # 8 triax • Bayonet locking system • MIL-C 38999 Series I contact layouts • 100% scoop proof • EMI/RFI shielding and shell-to-shell
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SI2301DS
Abstract: Si2301DS-T1 70627
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Si2301DS
O-236
OT-23)
Si2301DS-T1
S-31990--Rev.
13-Oct-03
70627
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Untitled
Abstract: No abstract text available
Text: Fiber Optic Interconnects Features • EMI/RFI sh ie ld e d ; easily used in noisy e n viro n m e n ts. ■ C o m pa ct [24.13 ■ 35.56 ■ 8.89 m m 0.95 x 1.4 x 0.35 in. ]. ■ T ra n sm issio n d ista n ce up to 2 km w ith p la stic clad silica PCS fib e r
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AL MARKING
Abstract: AL MARKING CODE Si2301DS
Text: Tem ic SÌ2301DS S e m i c o n d u c t o r s P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary r DS<on Q ) I d (A ) 0.130 VGS = -4.5 V -2.3 0.190 @ V os * -2.5 V -1.9 V d s (V ) -1 2 * *-20-V V qs version of the SÌ2301DS, available Q4’97. Contact Product Marketing for further information.
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2301DS
-20-V
2301DS,
Si2301DS
l50aC
S-51988--
17-Mar-97
S-51988--Rev.
AL MARKING
AL MARKING CODE
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